APT30GP60JDF1 Search Results

APT30GP60JDF1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
APT30GP60JDF1		Advanced Power Technology	POWER MOS 7 IGBT	Original	PDF	130.95KB	9

APT30GP60JDF1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode	Original	APT30GP60JDF1	PDF
Contextual Info: APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode	Original	APT30GP60JDF1	PDF
Contextual Info: TYPICAL PERFORMANCE CURVES APT30GP60JDF1 APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode	Original	APT30GP60JDF1	PDF
Contextual Info: APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode	Original	APT30GP60JDF1	PDF
IC 7420 Abstract: APT30GP60JDF1 Diode 224 Contextual Info: APT30GP60JDF1 600V POWER MOS 7 IGBT E E A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode	Original	APT30GP60JDF1 IC 7420 APT30GP60JDF1 Diode 224	PDF
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Contextual Info: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original		PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Contextual Info: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original		PDF