APT100GT60JRDL Search Results
APT100GT60JRDL Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT100GT60JRDL | Microsemi | Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 80; | Original | 201.15KB | 9 |
APT100GT60JRDL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
APT10035LLL
Abstract: APT100GT60JRDL
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Original |
apt100gt60jrdl50khze145592apt10035lll | |
Thunderbolt IGBT
Abstract: APT10035LLL APT100GT60JRDL
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Original |
apt100gt60jrdl50khze145592thunderbolt igbt+1 | |
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Contextual Info: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. |
Original |
apt100gt60jrdl50khze145592 | |
|
Contextual Info: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. |
Original |
apt100gt60jrdle14559250khz | |
|
Contextual Info: APT100GT60JRDL 600V, 100A, VCE ON = 2.1V Typical Resonant Mode Combi IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. |
Original |
apt100gt60jrdl50khze145592 | |
smps 1000W
Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
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Original |
des69110f-asmps 1000w600v 300a igbt dc to dc boost converter+8 |