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    APT100GT120JR Search Results

    APT100GT120JR Datasheets (3)

    Microsemi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    APT100GT120JR
    Microsemi Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP ; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; Original PDF 190.88KB 6
    APT100GT120JRDL
    Microsemi Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 1200; VCE(sat) (V): 3.7; IC (A): 67; Original PDF 230.32KB 9
    APT100GT120JRDQ4
    Microsemi Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP ; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; Original PDF 764.54KB 9
    SF Impression Pixel

    APT100GT120JR Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc APT100GT120JR

    IGBT NPT Medium Frequency Single 1200 V 100 A SOT-227
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    Onlinecomponents.com APT100GT120JR
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    Microchip Technology Inc APT100GT120JRDQ4

    IGBT Module - NPT - Single Configuration - 1200 V - 123 A - 570 W - 3.7V Vce(on) (Max) @ 15V Vge 100A Ic - ISOTOP Package - Chassis Mount.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics APT100GT120JRDQ4
    • 1 $59.03
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    Microchip Technology Inc APT100GT120JRDQ4 Tube 26 Weeks
    • 1 $61.82
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    Richardson RFPD APT100GT120JRDQ4 10
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    APT100GT120JR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    APT10035LLL

    Abstract: APT100GT120JRDL
    Contextual Info: 1200V APT100GT120JRDL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    apt100gt120jrdle145592apt10035lll PDF

    APT10035LLL

    Abstract: APT100GT120JRDL
    Contextual Info: 1200V APT100GT120JRDL Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    apt100gt120jrdle145592apt10035lll PDF

    Contextual Info: APT100GT120JRDQ4 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    apt100gt120jrdq450khze145592 PDF

    Contextual Info: APT100GT120JRDQ4 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    apt100gt120jrdq450khz PDF

    APT100DQ120

    Abstract: APT100GT120JRDQ4 IGBT Single 1200v 1000a 928N
    Contextual Info: APT100GT120JRDQ4 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT C G Features • Low Forward Voltage Drop E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    apt100gt120jrdq450khze145592apt100dq120+2igbt single 1200v 1000a928n PDF

    APT100DQ120

    Abstract: APT100GT120JR
    Contextual Info: APT100GT120JR 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    apt100gt120jr50khze145592-226ns+2928nsapt100dq120 PDF

    APT100DQ120

    Abstract: IGBT 120A 1200V
    Contextual Info: APT100GT120JRDQ4 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    apt100gt120jrdq450khzot-227apt100dq120+1igbt 120a 1200v PDF

    Contextual Info: APT100GT120JR 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    apt100gt120jr50khze145592 PDF

    S8070

    Contextual Info: 1200V APT100GT120JRDL Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    apt100gt120jrdle145592ot-227s8070 PDF

    Contextual Info: 1200V APT100GT120JRDL Resonant Mode IGBT C G S Typical Applications Features • E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    apt100gt120jrdle145592 PDF

    Contextual Info: APT100GT120JR 1200V, 100A, VCE ON = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.


    Original
    apt100gt120jr50khze145592ot-227 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    10f-asp6-pn-channel mosfet 800v 50a to-247smps 1000w igbt reference design+7drf140045a, 1200v n-channel npt series igbtaptes80da120c3gapt35dl120hjsemiconductors cross referenceigbt triple modules 100a2000w mosfet power inverter PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original
    des69110f-asmps 1000w600v 300a igbt dc to dc boost converter+8sp6-pdrf1400smps 500w half bridgedrf13001000w inverter mosfet1000w solar power inverterapt30gt60brg3000w inverter mosfet circuit PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original
    le79q22811n6761-12n2369au2n2907aub+6br17datasheet transistor si 6822dimming led aplicationsdimming led driver aplicationsgc4600ic zl70572 PDF

    single phase inverter IGBT

    Abstract: wind inverter Thunderbolt buck 800v igbt single phase inverter mosfet single phase full bridge inverter mosfet power inverter 500w single phase inverter SiC IGBT High Power Modules APT50GT60BRDQ2G
    Contextual Info: Product Solutions for Inverters in Distributed Power Markets Solar, Wind, UPS 1 Power Semiconductors for Inverters Your Inverter Requirements… Our Business • Comprehensive range of power semiconductor products to meet the needs of 500W to 500kW inverters


    Original
    500kwapt60n60bcsg00e-0700e-06+1150e-06single phase inverter igbtwind inverterthunderboltbuck 800v igbtsingle phase inverter mosfetsingle phase full bridge invertermosfet power inverter 500wsingle phase invertersic igbt high power modulesapt50gt60brdq2g PDF