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    APQ57SN10BH

    Contextual Info: DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


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    apq57sn10bh00v/57aapq57sn10bh-xxm0 PDF

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    Contextual Info: DEVICE SPECIFICATION APQ57SN10BH 100V/57A N-Channel MOSFET 2 Features 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide


    Original
    apq57sn10bh00v/57altbd PDF