APED3820SEC Search Results
APED3820SEC Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APED3820SEC | Kingbright | Material: Ingaalp Wavelength: 601nm | Original | 89.06KB | 4 | ||
| APED3820SEC-F01 | Kingbright | 3.8x2.0mm DOME LENS SMD CHIP LED LAMP | Original | 112.18KB | 4 | ||
| APED3820SECK | Kingbright | Material: Ingaalp Wavelength: 601nm | Original | 87.85KB | 4 | ||
| APED3820SECK-F01 | Kingbright | 3.8x2.0mm DOME LENS SMD CHIP LED LAMP | Original | 288.97KB | 5 |
APED3820SEC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
APED3820SECK
Abstract: SUPER BRIGHT LED
|
Original |
aped3820seck500pcsdsab0731apr/03/2003+1 | |
|
Contextual Info: 3.8x2.0mm DOME LENS SMD CHIP LED LAMP APED3820SECK Description Features z3.8mmx2.0mm zLOW SMT LED,3.2mm THICKNESS. FOR BACKLIGHT AND INDICATOR. zVARIOUS Emitting Diode. COLORS AND LENS TYPES AVAILABLE. zPACKAGE zRoHS The Super Bright Orange source color devices are |
Original |
aped3820seck500pcsdsab0731may/21/2005 | |
APED3820SEC-F01Contextual Info: 3.8x2.0mm DOME LENS SMD CHIP LED LAMP APED3820SEC-F01 Features z3.8mmx2.0mm zLOW Description SMT LED,3.2mm THICKNESS. POWER CONSUMPTION. zIDEAL The Super Bright Orange devices is made with DH InGaAlP on GaAs substrate¼ light emitting diode chip. FOR BACKLIGHT AND INDICATOR. |
Original |
aped3820sec-f01500pcsdsaf1200mar/16/2005 | |
APED3820SECContextual Info: 3.8x2.0mm DOME LENS SMD CHIP LED LAMP APED3820SEC SUPER BRIGHT ORANGE Features Description !3.8mmx2.0mm SMT LED,3.2mm THICKNESS. The Super Bright Orange source color devices are made !LOW with DH InGaAlP on GaAs substrate Light Emitting Diode. POWER CONSUMPTION. |
Original |
aped3820sec500pcsdsab0727apr/03/2003 | |
APED3820SECK-F01Contextual Info: 3.8x2.0mm DOME LENS SMD CHIP LED LAMP Part Number: APED3820SECK-F01 Super Bright Orange Features Description z3.8mmx2.0mm SMT LED,3.2mm THICKNESS. The Super Bright Orange device is made with DH InGaAlP on GaAs substrate light emitting diode chip. zLOW POWER CONSUMPTION. |
Original |
aped3820seck-f01500pcsdsah3746apr/27/2007 | |
SYk 04
Abstract: irf 570 IRF 470 N
|
OCR Scan |
aped3820ecaped3820srcaped3820surcaped3820surck+9 |