APD30 Search Results

kd 617

Abstract: APD400 AP4156 AMERICAN POWER DEVICES transistor KD 617 AP5179 APD200 AP4157 APD300 diode for clippers
Contextual Info: AMERICAN POWER DEVICES S'lE D 0 7 37 1 3 5 OGOOObfcj b ib H A P D 7 -"//-o <9 APD200, APD300, APD400 AP4156 - AP4157, AP5179 american S E M IC O N D U C T O R S p o w e r d e v ic e s , In c . Stabistor diodes — high speed, multi-pellet general purpose FEATURES

in4753

Abstract: ZENER 1N4735
Contextual Info: E3E D AMERICAN POWER DEVICES 073713S QDDDD1S 1 I T*f -j_3_ Z E N E R DIODES 1W DO-41 Case Typef Zener Voltage V 7 APD15.0 16.0 15.5 APD18.0 18.0 14 20.0 12.5 APD22.0 22.0 11.5 APD24.0 24.0 10.5 APD27.0 27.0 9.5 APD30.0 30.0 8.5 APD33.0 33.0 36.0 APD39.0 39.0

PIN-10D

Abstract: PIN-5DI PIN-13DI PIN-10DF PIN-10DI PIN10DI OSD100-0A InGaAs APD quadrant OSD5-5T PIN-44DI
Contextual Info: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,

PIN-125DPL

Abstract: PIN-10DP InGaAs APD quadrant OSD1-5T pin-6dp PIN-10AP PIN-10DPI PIN-13DPI PIN-220DP PIN-25D
Contextual Info: Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral

Contextual Info: Photoelectrics Through-beam Type PD30CNT15.MU/RT • • • • • • • • • • • • • Miniature sensor range Range: 15 m Sensitivity adjustment by Teach-In programming Modulated, Infraredred light 880 nm Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset

Contextual Info: Photoelectrics Diffuse-reflective, Background Suppression, IR Type PD30CNB20.IS • • • • • • • • • • • • Miniature sensor range Range: 200 mm Sensitivity adjustment by Potentiometer Modulated, infrared light 850 nm Supply voltage: 10 to 30 VDC

A2V-76

Abstract: SPOT-9DMI A2V-16 SPOT-2D QD50-0 SPOT-4D A5C38 DLS-20 a2v-16 photodiode array A2V16
Contextual Info: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors PSD The Super Linear Position Sensors feature state of the art duo-lateral technology to provide a continuous analog output proportional to the displacement of the centroid of a light spot from the center, on the active

Contextual Info: Photoelectrics Diffuse-reflective, Background Suppression Type PD30CNB15.RT • • • • • • • • • • • • Miniature sensor range Range: 150 mm Sensitivity adjustment by Teach-In programming Modulated, red light 660 nm Supply voltage: 10 to 30 VDC

Contextual Info: Photoelectrics Retro-reflective, Polarized Type PD30CNP06.SA • • • • • • • • • • • Miniature sensor range Range: 6 m Sensitivity adjustment by Potentiometer Modulated, red light 625 nm, polarized Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset

Contextual Info: Photoelectrics Diffuse-reflective Type PD30CND10.SA • • • • • • • • • • • Miniature sensor range Range: 1 m Sensitivity adjustment by Potentiometer Modulated, red light 625 nm Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset

BZX75C2V8

Abstract: 1N816 BZX75C2V1 bzx75c1v4 AP4157 BZX75-C2V1 STB568 AP4830 BZX75-C2V8 G129 stabistor
Contextual Info: ÖB FENUAL ELECTRONICS/APD 3Ef 3 S m S t B I ' r- ODD DT 2-1 1 il- * 1 STABISTORS DO-35 Case DO-35 Case Type 1N816 1N3896 AP3897 AP3898 AP4829 Stabistors are diffused silicon diodes with controlled forward voltage charac­ teristics. They are offered with reference

pd30cnd

Abstract: PD30CN PD30CND10 APD30-MB1
Contextual Info: Photoelectrics Diffuse-reflective Type PD30CND10.DU • • • • • • • • • • • • Product Description The PD30CND10 sensor family comes in a compact 10 x 30 x 20 mm reinforced PMMA/ABS housing. The sensors are useful in applications where highaccuracy detection as well as

IN4753

Abstract: 129 ITT zener ln4731 1N4733 1N4705
Contextual Info: AMERICAN POWER DEVICES S3E D • ’0737135 GOQGOIM T m ÎS j/il ^ ZENER DIODES r ~ - DO-35 Case - -— -— — — 250mW - DO-35 Case Nominal Zener Voltage Maximum Reverse Current Test

MIPS16

Abstract: System on a chip VR4102
Contextual Info: m ec NEC Electronics Inc. VR4111 jiPD30111 64-Bit MIPS RISC Microprocessor Product Brief September 1997 Description The 64-bit V r41 11 (nPD30111 ) microprocessor is a member of NEC’s V r Series™ devices created for Windows CE-based embedded consumer applications. Designed around the popular MIPS®

Contextual Info: Photoelectrics Diffuse-reflective Type PD30CND10.DU • • • • • • • • • • • • Miniature sensor range Range: 1 m Sensitivity adjustment by Teach-In programming Modulated, red light 660 nm Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset

Contextual Info: Photoelectrics Retro-reflective for Transparent Objects Type PD30CNG02.MU • • • • • • • • • • • • Miniature sensor range Range: 2 m, with reflector Sensitivity adjustment by Teach-In programming Modulated, red light 617 nm Supply voltage: 10 to 30 VDC

129 ITT zener

Abstract: lN4745 1N4683 1N4684 1N4685 1N4686 1N4687 1N4688 1N4689 1N4690
Contextual Info: S3 FENUAL E L E C T R O N I C S / A P D ZENER DIODES L LEAD D U NOT CONTROLLED• THIS ZONE . L r O d 3 - \ 060 J ,o » o Nominal Zener Voltage ly p o t I K 11:°“ » 4-OSO MAX V2@ 1 ^ = 5 0 ^ I i DO-35 Case 250mW DO-35 Case d I S . * 120

Contextual Info: Photoelectrics Through-beam Type PD30CNT15.SA • • • • • • • • • • • Miniature sensor range Range: 15 m Sensitivity adjustment by potentiometer Modulated, infrared light 850 nm Supply voltage: 10 to 30 VDC Output: 100 mA, NPN or PNP preset

BZX75C

Abstract: BZ102 diode 1n816 diode BZX75C1V4 G129 stabistor 1N816 BZX75-C2V1 AP2361 BZX75C-1V4 BZ102 1V4
Contextual Info: AMERICAN POWER DEVICES •73713S DODODSM S 23E D STABISTORS DO-35 Case DO-35 Case Type LEAD DIA NOT CONTROLLED THIS ZONE Voltage VR V 3d Stabistors are diffused silicon diodes with controlled forward voltage characteristics. They are offered with reference

PD30CN

Abstract: ER4060 6 pin push button configuration pd30cnp06 APD30-MB2 PUSH BUTTON SWITCH 6 pin APD30-MB1 push button switch 4pin
Contextual Info: Photoelectrics Retro-reflective, Polarized Type PD30CNP06.DU • • • • • • • • • • • • Product Description The PD30CNP06 sensor family comes in a compact 10 x 30 x 20 mm reinforced PMMA/ABS housing. The sensors are useful in applications where highaccuracy detection as well as

Transmissive Optical Sensor 3 pin

Abstract: photoconductive light sensor yellow LED Reflective Optical Sensor APD-300L OPTICAL INTERRUPTER APD900 GaP photodiode APD apd500 uv phototransistor led 905 660
Contextual Info: Optical Switch Series Transmissive and Reflective Photo-interrupters Photo-interrupters are used to detect object passage and proximity presence, and they are available in two forms: transmissive and reflective. In the transmissive group, the infared LED and phototransistor are

PD30CNT15

Abstract: push button switch 2 pin APD30-MB2 wiring diagram contactor with push button push button 4 pin short distance detection PD30CN Infrared emitter receiver hysteresis PD30CNT15NPM5RT
Contextual Info: Photoelectrics Through-beam Type PD30CNT15.MU/RT • • • • • • • • • • • • • Product Description The PD30CNT15 sensor family comes in a compact 10 x 30 x 20 mm reinforced PMMA/ABS housing. The sensors are useful in applications where highaccuracy detection as well as

Contextual Info: Photoelectrics Retro-reflective, Polarized Type PD30CNP06.DU • • • • • • • • • • • • Miniature sensor range Range: 6 m, with reflector Sensitivity adjustment by Teach-In programming Modulated, red light 660 nm, polarized Supply voltage: 10 to 30 VDC

QD50-0

Abstract: APD, laser, range, finder 850nm APD Photodiode apd high sensitivity quadrant avalanche photodiode "laser range finder" APD-500 apd gain control OSD60-0 CD-1705
Contextual Info: Avalanche Photodiodes Ultra High Gain Silicon Photodetectors Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI