AP100 Search Results

Contextual Info: AP1005BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 25V RDS(ON) 3.8mΩ ID G 19A S Description The AP1005BSQ used the latest APEC Power MOSFET silicon

Contextual Info: AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 25V RDS(ON) 6mΩ ID G 15A S Description The AP1001BSQ used the latest APEC Power MOSFET silicon

AP1000A

Abstract: 10M-ATS
Contextual Info: AP1000A SILICON PIN DIODE PACKAGE STYLE 15 DESCRIPTION: The AP1000A is a Diffused Epitaxial Silicon PIN Diode. MAXIMUM RATINGS IC 100mA VCE 100 V PDISS 500 mW @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C θJC 50 C/W TSOLD 5.0 Sec./200 C O O O O O O

AP1000C-11

Contextual Info: AP1000C-11 SILICON PIN DIODE DESCRIPTION: The AP1000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device Iis Designed to Cover a Wide Range of Control Applications Such as RF Switching, Phase Shifting,

AP1003

Contextual Info: Advanced Power Electronics Corp. AP1003BMP-3 N-channel Enhancement-mode Power MOSFET Lead Pb -free, Halogen-free D BV DSS Low Conductance Losses 30V RDS(ON) Fast Switching Performance G Low Profile (< 0.7mm ) 4.5mΩ ID S 18.4A Description The AP1003BMP-3 uses the latest APEC Power MOSFET silicon

Contextual Info: AP1005BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 3.8m ID G Compatible with DirectFET Package SQ Footprint and Outline

AP1002BMX

Contextual Info: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 1.8mΩ ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon

ap1001

Abstract: AP1001BSQ 6M15A
Contextual Info: AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 25V RDS(ON) 6mΩ ID G 15A S Description The AP1001BSQ used the latest APEC Power MOSFET silicon

ap1002

Contextual Info: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 1.8mΩ ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon

Contextual Info: Advanced Power Electronics Corp. AP1002BMX-3 N-channel Enhancement-mode Power MOSFET RoHS-compliant, Halogen-free D BV DSS Low Conductance Losses 30V RDS ON Fast Switching Performance G Low Profile (< 0.7mm ) 1.8mΩ ID S 32A Description The AP1002BMX-3 uses the latest APEC Power MOSFET silicon

Contextual Info: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 1.8m ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon

Contextual Info: AP1003BST Preliminary Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 4.7m ID G 17.3A S Description The AP1003BST used the latest APEC Power MOSFET silicon

Contextual Info: AP1004CMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Ultra-low Forward Diode BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 1.8m ID G Compatible with DirectFET Package MX Footprint and Outline

AP1000B-00

Contextual Info: AP1000B-00 SILICON PIN DIODE CHIP DESCRIPTION: The AP1000B-00 is a Planar Silicon PIN Diode Chip Designed for High Speed Switch and Limiter Applications Up to 18 GHz. FEATURES INCLUDE: • Low Capacitance - 0.10 pF Typical • Fast Switching - 10 nS Typical

AP1002

Contextual Info: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 1.8mΩ ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon

Contextual Info: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 1.8mΩ ID G 32A S Description The AP1002BMX used the latest APEC Power MOSFET silicon

ABB AX400

Abstract: AP103 ph sensor water pH measurement sensor c763 transistor c763 datasheet AP100 series water flow sensor water ph sensor liquid electrolyte sensor
Contextual Info: Data Sheet SS/AP100 Issue 9 pH/Redox ORP Cartridge Sensors with Water-Wash Option AP100 Series Compact 'all-in-one' cartridge design – simplifies sensor replacement, minimizing downtime Detachable cable option – ensures rapid and easy installation and

Contextual Info: Advanced Power Electronics Corp. AP1001BSQ-3 N-channel Enhancement-mode Power MOSFET Lead Pb -free, Halogen-free D Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm ) G S BV DSS 25V RDS(ON) 6mΩ ID 15A Description The AP1001BSQ-3 uses the latest APEC Power MOSFET silicon

Contextual Info: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm ▼ Compatible with DirectFET Package MX Footprint and Outline BVDSS 30V

AP1004CMX

Contextual Info: AP1004CMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Ultra-low Forward Diode D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 25V RDS(ON) 1.8mΩ ID G 32A S Description The AP1004CMX used the latest APEC Power MOSFET silicon

AP1003

Abstract: miller
Contextual Info: AP1003BST Preliminary Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 4.7mΩ ID G 17.3A S Description The AP1003BST used the latest APEC Power MOSFET silicon

Contextual Info: AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 6m ID G 15A S Description The AP1001BSQ used the latest APEC Power MOSFET silicon

Contextual Info: Advanced Power Electronics Corp. AP1005BSQ-3 N-channel Enhancement-mode Power MOSFET Lead Pb -free, Halogen-free D BV DSS Low Conductance Losses RDS(ON) Fast Switching Performance Low Profile (< 0.7mm ) G S ID 25V 3.8mΩ 19A Description The AP1005BSQ-3 uses the latest APEC Power MOSFET silicon

Contextual Info: Advanced Power Electronics Corp. AP1003BST-3 N-channel Enhancement-mode Power MOSFET Lead Pb -free, Halogen-free D BV DSS Low Conductance Losses RDS(ON) Fast Switching Performance Low Profile (< 0.7mm ) G S ID 30V 4.5mΩ 17.3A Description The AP1003BST-3 uses the latest APEC Power MOSFET silicon