AM29F080 Search Results

Contextual Info: AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology

Contextual Info: PRELIM IN ARY AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ Package options

AM29F080B-120

Abstract: AM29F080B-150 AM29F080B-75 AM29F080B-90 SA10 df83
Contextual Info: Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F080 device

AM29F080B-90

Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA10-SA1 am29f080b-90ei
Contextual Info: Am29F080B Data Sheet Am29F080B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

Contextual Info: AMENDMENT AMD£I Am29F080 Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This am endm ent supersedes inform ation regarding the A m 2 9 F 0 8 0 de vice in the 1996 Flash P ro d u cts D ata B ook/H andbook, PID 1 1796D. This docum ent includes

Contextual Info: PRELIM IN ARY AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — M inimizes system level power requirem ents ■ M anufactured on 0.35|xm process technology

Contextual Info: AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology

Am29F080

Contextual Info: EDI7F433IMC m 4x1Megx32 4x1Megx32 Flash Module TTi e EDI7F33IMC is organized as fourban ks of 1 meg x 32. T h e m o lile is based on AMDs AM29F080-1 Meg x8Flash device in TSOP packages which are mounted on an FR4 substrate. The module offers access times between 90 and 150ns

SA13

Abstract: SA14 SA10 SA11 SA12
Contextual Info: PRELIMINARY Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology

AM29F080

Abstract: SA12 SA13 SA14 SA15 AM29F0808
Contextual Info: PRELIM INARY a Am29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices d is t in c t iv e c h a r a c t e r is t ic s • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements

AM29F080

Abstract: SA12 SA13 SA14 SA15
Contextual Info: PRELIMINARY Am29F080 8-Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program Algorithms — Minimizes system level power requirements

Contextual Info: Am29F080B Data Sheet Am29F080B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

Contextual Info: Am29F080B Data Sheet Am29F080B Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

1.5528

Abstract: 1mx8 MARK J3 AM29F080 EDI7F331MC
Contextual Info: EDI7F331MC 1Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F331MC and EDI7F2331MC are organized as one and two banks of 1Mx32 respectively. The modules are based on AMDs AM29F080 - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. BLOCK DIAGRAMS

29F080

Contextual Info: P R E L IM IN A R Y Am29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ — Minimizes system level power requirements

Am29F080B

Contextual Info: PRELIM IN ARY AMDZ1 Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Typical 1,000,000 w rite/erase cycles (minimum 100,000 cycles guaranteed)

Contextual Info: ADVANCE INFORMATION AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirements ■ — Embedded Erase algorithm automatically

AM29F080B-120

Abstract: AM29F080B-150 AM29F080B-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F080B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

SIMM 80 jedec

Contextual Info: EDI7F331MC 1 MEG x 32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F331MC and EDI7F2331MC are organized as one and two banks of 1Meg x 32 respectively. The modules are based on AMDs AM29F080 - 1Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate.

80 pin simm flash

Abstract: AM29F080 1mx8 EDI7F331MC
Contextual Info: EDI7F331MC White Electronic Designs 1Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F331MC and EDI7F2331MC are organized as one and two banks of 1Mx32 respectively. The modules are based on AMDs AM29F080 - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: PRELIMINARY AMD£I Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program/erase cycles per sector guaranteed ■ Package options

Contextual Info: Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F080 device

AM29F080

Abstract: EDI7F331MC
Contextual Info: ED17F331MC White Electronic 1Mx32 FLASH MODULE DESCRIPTION The EDI7F331MC and EDI7F2331MC are organized as one and two banks of 1Mx32 respectively. The modules are based on AMDs AM29F080 - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: EDI7F4331MC 4 x 1 MEG x 32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F4331MC is organized as four banks of 1 Meg x 32. The module is based on AMDs AM29F080 - 1 Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. BLOCK DIAGRAM EDI7F4331MC-BNC:4 x 1 MEG x 32 80 PIN SIMM