AM090 Search Results

Meter-Bus

Abstract: EN137574
Contextual Info: DS0010 - AM090 Wireless Meter-Bus 868MHz Narrowband Modem Advance Information Datasheet DS0010 AM090 Wireless Meter-Bus 868MHz Narrowband Modem Advance Information Production Status – Production Important Information – The information contained in this document is subject to

stp26nm60

Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
Contextual Info: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V

32NM50N

Abstract: AM-1309
Contextual Info: STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N N-channel 500 V, 0.1 Ω typ., 22 A MDmesh II Power MOSFET in D²PAK, TO-220FP, TO-220, TO-247 packages Datasheet — production data Features TAB Order codes VDS RDS on max. PTOT ID 2 3 1 STB32NM50N STF32NM50N

Contextual Info: STH260N6F6-6 N-channel 60 V, 1.7 mΩ typ., 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-6 package Datasheet − preliminary data Features Order code VDSS RDS on max ID STH260N6F6-6 60 V < 2.4 mΩ 180 A • Low gate charge ■ Very low on-resistance

stp18nm60n

Abstract: stw18nm60n STF18NM60N 18NM60N 18nm60 STB18NM60N
Contextual Info: STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet — production data Features TAB Order codes VDSS @Tjmax RDS(on) max. PTOT ID 3 STB18NM60N STF18NM60N

Contextual Info: STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh II Power MOSFETs with fast diode in D2PAK and TO-247 packages Datasheet - production data Features Order codes STB36NM60ND TAB STW36NM60ND 3 1 2 3 1 D2PAK TO-247 VDSS @TJ

Contextual Info: STF34NM60N N-channel 600 V, 0.092 Ω typ., 31.5 A MDmesh II Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDSS RDS on ID PTOT STF34NM60N 600 V 0.105 Ω 31.5 A 40 W • 100% avalanche tested • Low input capacitance and gate charge

Contextual Info: STFI34NM60N N-channel 600 V, 0.092 Ω, 31.5 A MDmesh II Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code VDSS RDS on ID PTOT STFI34NM60N 600 V 0.105 Ω 31.5 A 40 W • 100% avalanche tested • Low input capacitance and gate charge

Contextual Info: STW48NM60N N-channel 600 V, 0.055 Ω, 39 A TO-247 MDmesh II Power MOSFET Features Order code VDSS @ TJmax RDS on max ID STW48NM60N 650 V < 0.07 Ω 39 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ 2 Low gate input resistance

34NM60N

Abstract: STF34NM60N STP34NM60N STW34NM60N
Contextual Info: STF34NM60N STP34NM60N, STW34NM60N N-channel 600 V, 0.092 Ω, 29 A MDmesh II Power MOSFET TO-220, TO-247, TO-220FP Features Type STF34NM60N STP34NM60N STW34NM60N VDSS RDS on max. ID PTOT 600 V 600 V 600 V 0.105 Ω 0.105 Ω 0.105 Ω 29 A 29 A 29 A 40 W 210 W

STN3N40K3

Abstract: 3n40k stn3n40k 29-Jun-2010 P008
Contextual Info: STN3N40K3 N-channel 400 V, 3 Ω, 1.8 A SOT-223 SuperMESH3 Power MOSFET Features Order code VDSS RDS on max ID PW STN3N40K3 400 V < 3.4 Ω 1.8 A 3.3 W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance

Contextual Info: STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFETs in a TO-247 package Datasheet - production data Features Order code VDS RDS on max ID STW26NM60N 600 V 0.165 Ω 20 A • 100% avalanche tested • Low input capacitance and gate charge

100NM60N

Abstract: STY100NM60N
Contextual Info: STY100NM60N N-channel 600 V, 0.028 Ω typ., 98 A MDmesh II Power MOSFET in a Max247 package Datasheet — production data Features Type VDSS @ TJmax RDS on max ID STY100NM60N 650 V < 0.029 Ω 98 A • 100% avalanche tested ■ Low input capacitance and gate charge

STD13NM60N

Abstract: STB13NM60N 13NM60 13nm60n 13nm6
Contextual Info: STB13NM60N, STD13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh II Power MOSFET in D²PAK and DPAK packages Datasheet — production data Features Order codes VDSS @Tjmax RDS(on) max ID STB13NM60N 650 V < 0.36 Ω 11 A STD13NM60N 650 V < 0.36 Ω 11 A

STP260N6F6

Contextual Info: STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A TO-220, I²PAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max ID STP260N6F6 STI260N6F6 60 V < 0.003 Ω 120 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness

34NM60N

Abstract: 34NM60
Contextual Info: STFI34NM60N N-channel 600 V, 0.092 Ω, 29 A MDmesh II Power MOSFET in I²PakFP Preliminary data Features VDS RDS on max. ID PTOT 600 V 0.105 Ω 29 A 40 W Order code STFI34NM60N • 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance

Contextual Info: STB36NM60N N-channel 600 V, 0.092 Ω, 29 A, MDmesh II Power MOSFET in D²PAK Features Order code VDSS @ TJmax RDS on max ID PW STB36NM60N 650 V < 0.105 Ω 29 A 210 W • 100% avalanche tested 3 ■ Low input capacitance and gate charge ■ Low gate input resistance

Contextual Info: STL35N15F3 N-channel 150 V, 0.04 Ω, 7 A, PowerFLAT 5x6 STripFET™ III Power MOSFET Features Type VDSS RDS(on) max ID STL35N15F3 150 V < 0.0355 Ω 7 A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

stl35n15f3

Contextual Info: STL35N15F3 N-channel 150 V, 0.0355 Ω, 7 A STripFET III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Order code VDSS RDS on max ID STL35N15F3 150 V < 0.04 Ω 7 A (1) 1. The value is rated according Rthj-pcb 1 2 • Improved die-to-footprint ratio

stp210n75

Abstract: STP210N75F6 210N75F6
Contextual Info: STP210N75F6 N-channel 75 V, 3 mΩ, 120 A TO-220 STripFET VI DeepGATE™ Power MOSFET Features Order code VDSS RDS on max ID STP210N75F6 75 V < 3.7 mΩ 120 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness 3 1 2 TO-220 Application

48NM60N

Abstract: stw48nm60 STW48NM60N 48nm60
Contextual Info: STW48NM60N N-channel 600 V, 0.055 Ω, 39 A TO-247 MDmesh II Power MOSFET Features Order code VDSS @ TJmax RDS on max ID STW48NM60N 650 V < 0.07 Ω 39 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ 2 Low gate input resistance

Contextual Info: STW48NM60N N-channel 600 V, 0.055 Ω typ., 44 A MDmesh II Power MOSFET in a TO-247 package Datasheet — production data Features Order codes VDSS @ TJmax RDS on max ID STW48NM60N 650 V < 0.07 Ω 44 A • 100% avalanche tested ■ Low input capacitance and gate charge

19NM60N

Contextual Info: STW19NM60N Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in a TO-247 package Datasheet - production data Features 2 Order code VDS @Tjmax RDS(on) max. STW19NM60N 650 V 0.285 Ω PTOT ID 13 A 110 W • Designed for automotive applications and

Contextual Info: STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A TO-220, I²PAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max ID STP260N6F6 STI260N6F6 60 V < 0.003 Ω 120 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness