AI203 Search Results

ZN 3055 transistor

Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
Contextual Info: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K

Contextual Info: - PREMO CS0805F Features CS0805 ceramic wound chip inductor is manufactured under 100% test o f L and Q actual operating frequencies. Fully automatic machine made, this series issues 0-defects. HighQ factor and self-resonance frequencies, allow excellent operation in GSM frequencies,

NXED0603

Abstract: AI203 NXED0402
Contextual Info: Surface Mount ESD Suppressor NXED Series FEATURES • IDEAL FOR USB2.0, IEEE1394 & HDMI HIGH SPEED DATA APPLICATIONS • SUPER LOW CAPACITANCE AS LOW AS 0.05pF RoHS Compliant • EIA SIZES 0402 AND 0603 includes all homogeneous materials • MEETS STANDARDS OF IEC 61000-4-2, LEVEL 4

CQFP68

Contextual Info: TS8388B ADC 8-bit 1 Gsps Datasheet 1. Features • • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.5 GHz Full Power Input Bandwidth –3 dB 1 Gsps (min.) Sampling Rate SINAD = 44.3 dB (7.2 Effective Bits), SFDR = 58 dBc, at FS = 1 Gsps, FIN = 20 MHz

AI203

Abstract: N-15 cga to vga converter RO4003 TS83102G0BMGS TSEV83102G0BGL JTS8388B atmel square wave generator circuit D9B diode
Contextual Info: Features • • • • • • • • • • • • • • • • • • Up to 2 Gsps Sampling Rate Power Consumption: 4.6W 500 mVpp Differential 100Ω or Single-ended 50Ω ±2 % Analog Inputs Differential 100Ω or Single-ended 50Ω Clock Inputs

NPN Two monolithic transistors

Abstract: d5 diod CQFP68 JTS8388B TS81102G0 TS8388B TS8388BG DIOD B4 85116
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.5 GHz Full Power Input Bandwidth -3 dB 1 GSPS (min) Sampling Rate SINAD = 44.3 dB (7.2 Effective Bits), SFDR = 58 dBc, at FS = 1 GSPS, FIN = 20 MHz

2SC2570

Abstract: 2sc2570 transistor NE02132
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,

MK 1200

Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FF225R12MS4   IGBT- インバータ/IGBT,Inverter 暫定データ/PreliminaryData

FS50R12KT3

Abstract: ic 4933
Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R12KT3   IGBT,逆变器/IGBT,Inverter

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS100R12KT4G   IGBT,Wechselrichter/IGBT,Inverter VorläufigeDaten/PreliminaryData

fs100r12ke3

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS100R12KE3 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES  1200  V Kollektor-Dauergleichstrom

FS35R12KT3

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS35R12KT3   IGBT,逆变器/IGBT,Inverter

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS100R12KS4 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 初步数据/PreliminaryData 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES  1200  V

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules IFS100B12N3E4_B39 MIPAQ base模块采用第四代沟槽栅/场终止IGBT和第四代发射机控制二极管带有电流采样电阻

AI203

Contextual Info: 100% Material Declaration Data Sheet for 7 Series FF901 PK562 v1.1 October 12, 2012 Average Weight: 10.2338g Component Substance Description CAS Number or Description Percentage of Component Use in Product Silicon Die Silicon (Si) 7440-21-3 100.00 Basis

FFG900

Abstract: bt 1690 Indium tin oxide
Contextual Info: 100% Material Declaration Data Sheet for 7 Series FFG900 PK524 v1.2 October 12, 2012 Average Weight: 11.5795g Component Substance Description CAS Number or Description Percentage of Component Use in Product Silicon Die Silicon (Si) 7440-21-3 100.00 Basis

VL86C410

Abstract: VL86C010 vl1772
Contextual Info: V L S I TECHNOLOGY INC 5 ?E D ÎBÔÛBH? QOObSOñ 1 • T -S Z -3 V 1V L S I T e ch n o lo g y , in c. 5 3 VL86C410 RISC I/O CONTROLLER IOC FEATURES DESCRIPTION • Power on reset control The VL86C410 Input/Output Controller (IOC) is designed to interface to the

Contextual Info: AT84AS008 10-bit 2.2 Gsps ADC Datasheet Features • • • • • • • • • • • • • • 10-bit Resolution ADC 2.2 Gsps Sampling Rate Seamless Ascending Compatibility with TS83102G0B 10-bit 2 Gsps ADC 500 mVpp Full-scale Analog Input Range

TGA2575-TS

Abstract: TGA2575
Contextual Info: TGA2575-TS Ka-Band 3 Watt Power Amplifier Applications •  Military Radar Communications Product Features        Functional Block Diagram Frequency Range: 32.0 – 38.0 GHz Power: 35.5 dBm Psat PAE: 22% Gain: 19 dB Return Loss: 12 dB

Contextual Info: TechnischeInformation/TechnicalInformation FS75R12KT3 IGBT-Module IGBT-modules  

Contextual Info: V L S I TECHNOLOGY INC E7E D *1300347 DDGtiGÖB 7 VLSI Tech n o lo gy , in c . iU M D M Ä m f -n -Z T . VL86C020 32-BIT RISC MICROPROCESSOR WITH CACHE MEMORY FEATURES DESCRIPTION • On-chip 4 Kbyte 1K x 32 bits cache memory The VL86C020 Acorn RISC Machine

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS75R12KE3G IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES  1200  V 连续集电极直流电流 ContinuousDCcollectorcurrent

fp40r12ke3g

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP40R12KE3G

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules IFS100B12N3T4_B31