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AI1104 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
l-band Phase Shifter Abstract: level shifter 3.3 cmos Contextual Info: Advance Information: AI1104 L-Band 6-Bit Digital Phase Shifter GaAs Monolithic Microwave IC P6…P1 V- V+ Control interface In Out P1 P2 P3 P4 P5 P6 UMS is developing a L-Band 1.2-1.4GHz monolithic 6 bit digital phase-shifter with a 0-360° range and offering a high phase accuracy. The typical RMS phase error is lower than 1.5°.	Original	AI1104 AN0020 ES-CHP3010-99F AI11041152 l-band Phase Shifter level shifter 3.3 cmos	PDF
CR10 Abstract: 4047N Contextual Info: M30L0T8000T0 M30L0T8000B0 256 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V core, 3V I/O Flash memory Feature summary • ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 2.2V to 3.6V for I/O Buffers – VPP = 9V for fast program (12V tolerant)	Original	M30L0T8000T0 M30L0T8000B0 52MHz LFBGA88 CR10 4047N	PDF
CR10 Abstract: J-STD-020B M58LR128GB M58LR128GT VFBGA56 Contextual Info: M58LR128GT M58LR128GB 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers	Original	M58LR128GT M58LR128GB 54MHz CR10 J-STD-020B M58LR128GB M58LR128GT VFBGA56	PDF

Catalog Datasheet

Type

Document Tags

PDF

l-band Phase Shifter

Abstract: level shifter 3.3 cmos
Contextual Info: Advance Information: AI1104 L-Band 6-Bit Digital Phase Shifter GaAs Monolithic Microwave IC P6…P1 V- V+ Control interface In Out P1 P2 P3 P4 P5 P6 UMS is developing a L-Band 1.2-1.4GHz monolithic 6 bit digital phase-shifter with a 0-360° range and offering a high phase accuracy. The typical RMS phase error is lower than 1.5°.

Original

AI1104 AN0020 ES-CHP3010-99F AI11041152 l-band Phase Shifter level shifter 3.3 cmos

PDF

CR10

Abstract: 4047N
Contextual Info: M30L0T8000T0 M30L0T8000B0 256 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V core, 3V I/O Flash memory Feature summary • ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 2.2V to 3.6V for I/O Buffers – VPP = 9V for fast program (12V tolerant)

Original

M30L0T8000T0 M30L0T8000B0 52MHz LFBGA88 CR10 4047N

PDF

CR10

Abstract: J-STD-020B M58LR128GB M58LR128GT VFBGA56
Contextual Info: M58LR128GT M58LR128GB 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

Original

M58LR128GT M58LR128GB 54MHz CR10 J-STD-020B M58LR128GB M58LR128GT VFBGA56

PDF