A2260 Search Results

UnitedPRO

Contextual Info: 0222 X 60 mm UNITEDPR& 0 4.4 ±0.4 Pthfu i2>Ho«¿ 6<r0i;05 Listed Model A2260H11B-C A2260H23B-C Bearing Type Ball Ball Rated Voltage VDC 115 230 Rated Current Amp 0.42/0.46 0.25/0.26 Rated Power Watts 50/56 56/60 A 2260 H B -C A ir flo w -C F M Speed RPM

Contextual Info: Ordering number : EN*A2260 LE25S80FD Advance Information CMOS LSI http://onsemi.com 8M-bit 1024K  8 Serial Flash Memory Overview The LE25S80FD is a SPI bus flash memory device with a 8M bit (1024K  8-bit) configuration that adds a high performance Dual output and Dual I/O function. It uses a single 1.8V power supply. While making the most of the

A226

Abstract: HWS50
Contextual Info: DENSEI-LAMBDA HWS50/A SPECIFICATIONS A226-01-01/A-C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 MODEL ITEMS Nominal Output Voltage Maximum Output Current Maximum Output Power Efficiency Typ (*1) 100VAC 200VAC Input Voltage Range

A226

Abstract: A226 transistor HWS50
Contextual Info: DENSEI-LAMBDA HWS50/HD SPECIFICATIONS A226-01-01/HD HWS50 HWS50 HWS50 HWS50 HWS50 -5/HD -12/HD -15/HD -24/HD -48/HD 5 12 15 24 48 1 V 0.1 0.04 0.04 0.02 0.01 2 A 10 4.3 3.5 2.2 1.1 3 A 50 51.6 52.5 52.8 52.8 4 W 82 81 81 82 83 5 % 84 83 83 84 85 % 6 85 ~ 265VAC 47 ~ 63Hz or 120 ~ 370VDC

HWS50

Abstract: A226 transistor IEC61000-3-2
Contextual Info: DENSEI-LAMBDA HWS50 SPECIFICATIONS A226-01-01C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Isolation Resistance 29 Vibration 30 Shock In package 31 Safety 32 33 34 35 HWS50 HWS50 HWS50 HWS50 HWS50 -5 -12 -15 -24 -48 5 12 15

LINDNER fuses

Abstract: 500765 lindner IEC 60947-3 ac-22b switch disconnector fuse 250A 690V nh00gg50v125 NT NH LINDNER fuses P218766 1b769 C2237
Contextual Info: 38103-FER NH-fuses A4-engl 22.10.2003 15:50 Uhr Seite 3 NH-Fuse system Low voltage 38103-FER NH-fuses A4-engl 22.10.2003 14:01 Uhr Seite 2 NH-fuses Utilization Categories The utilization category is marked by two letters. The first letter indicates the breaking-capacity range, and the

HA2-2602-2

Abstract: HA2-2605-5 HA2825 HA1-2620-2 HAI 2625-5 HA2-2600-2 HA2600 HA2602 HA2605 HA2620
Contextual Info: O iM e m -H A 2 6 0 0 , H A 2 6 0 5 , H A 2 6 2 2 , H A 2602, H A2620, HA2625 H igh Im p e d a n c e O p e ra tio n a l A m p lifie rs FEATURES GENERAL DESCRIPTION • Inp ut Impedance — 500M£2 The 2600 series o f high impedance operational am plifiers

2SK1823-01R

Abstract: H100
Contextual Info: 2SK1823-01R FUJI P O W E R M O S - F E T N-CHAN NEL SILICON POWER MOS-FET p- « ^ - FAP-IIIA SERIES • Features TITÄ Outline Drawings • High current • -ow on-resistance • slo secondary breakdown • .ow driving power • High forward Transconductance

a0540

Abstract: A2730
Contextual Info: AC ADAPTERS AC output, U.S. version, wall plug-in type INPUT: 120VAC, 50/60 Hz. ALL MODELS ARE UL LISTED. El 41 SERIES, SIZE F El 35 SERIES, SIZE E WITH GROUND PIN SIZE G MODEL NO. A0410 A0420 A0430 A0440 A0450 A0460 A0470 A0480 A0490 A0510 A0520 A0530 A0540

Contextual Info: A2260-QAG 18-27GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The A2260-QAG is a low noise amplifier monolithic circuit, which integrates 3-stages self biased. It is designed for a wide range of applications, from military to commercial

A22410

Contextual Info: Filter connectors •370 inch Solder pin angled with threaded lock, metal bracket and clip Socket connector Plug connector snap for PCB 0 3.1 ' 0,1, t = 1,6 mm snap for PCB 0 3.1 ±01, t = 1.6 mm Kat 1 i 1AA Kat 1 i 2AA A - 0V6 B - 0.25 C 9 31,19 16,46 25,00

A226

Abstract: GPS SAW filter SAW Filter A226 transistor EFCH1575TCA1 Matsua saw Panasonic SAW matsua ceramic filter
Contextual Info: Panasonic To No. A226-040403B-01 Date 3rd Apr. '04 Type No. GRAB4 Data Sheet GPS Rx SAW Filter Application : Rx Filter for GPS Center Frequency : 1575.42MHz Size : 2.0x1.4mm, 5pin-layout Impedance : 50-100ohms unbalance-balance Part No. : EFCH1575TCA1 Issued

1823-01R

Abstract: 2SK1823-01R T151 FA-MT A2260
Contextual Info: 2SK1823-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES I Features Outline Drawings ►High current ►-ow on-resistance ►slo secondary breakdown ►.ow driving power ►High forward Transconductance ►\valanche-proof ►ncluding G-S Zenner diode

SN72710L

Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
Contextual Info: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4