9T TRANSISTOR Search Results

DSKTJ05

Abstract: transistor code book FET MARKING CODE
Contextual Info: DSKTJ05 Tentative Total pages page DSKTJ05 Silicon N-channel junction FET For AF impedance converter Marking Symbol : 9S, 9T Package Code : TSSSMini3-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source voltage Gate open Drain-gate voltage(Source open)

Contextual Info: PANASONIC INDL/ELEK -CIC3- 72 6932852 PANASONIC INOLfELECTRONIC D E I b *132052 OODflSn T 72C 08599 0 T-P&ZT fl\l AN 90 B 00/A N 90 BOOS Series |C A N 90B00/A N 90B00S Series 7s9 ~F\s-4/"Transistor h7 Arrays • 9t II Unit mm AN90B00 Series Y ÿ 's ;s Ä 9 T i " AN90B00/ÄN90BOOS -> > - X l i , 8 f i '

Contextual Info: 7 4 " j* > '} r P 7 - F X series Switching Power Transistor « @ is Item ft 9t ^ Sym bol i f t f i C o n d itio n s R a tin g s a. A bsolute Maximum R atings T stg -5 5 -1 5 0 “C Tj 150 °c V cB O 600 V 9W ± V cE O 450 C o lle c to r to E m itte r V o lta g e

2SB737

Abstract: 2SD786 2SD786S 89ji 2Sd786 rohm 2SB737 rohm
Contextual Info: ROHM CO LTD h7 ~ 4QE D 7 a a a ci c ':i o o o s a i a a / T ransistors 2SD786/2SD786S ' 2SD786 2SD786S m rh h 7 ^ 2 7 -0 °) V lJ - 1> K7 > V ^ iW Low Noise Amp. Epitaxial Planar NPN Silicon Transistors 1W ff^ > £ IS l/D im e n s io n s U n it: mm) m r a t' is tttm o

sf 128 transistor

Abstract: 2SK2159 TRANSISTOR SF 128 6GDG TC-7989A
Contextual Info: h ^ > v x & MOS Field Effect Transistor 2SK2159 N MOS FET m 2SK215 9 it 1.5 V i l Ü £ < y<DN3- -V % U , f£ Œ T i ® -? è , m x 'f y i - > 7 m MOS FETT' & w t f o K t-T t '/ c ® , IM & : m m m 4.5 ±0.1 < £ !> '(£ - r i * * 7 ÎC i f W f ê Œ ®

9T TRANSISTOR

Abstract: 75451 ttl NAND gate circuit TO-99 DTL Fairchild TO-100 8pin tic 122 75452 8T23 8T24
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 115 55/75325 116 55/75430, 55/75450, 55/75460 117 55/75431, 55/75451 55/75461, 55/75471 SOURCE 118 55/75432, 55/75452, 55/7562, 55/7572 121 8T13, 8T23, 55/75121, 75123 119 55/75433, 55/75453, 55/75463, 55/75473

74LS247

Abstract: 75492 TTL 74ls247 ttl 74141 9T TRANSISTOR 74LS248 MA5558 D135 D141 D143
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I26 75492, 9664 124 9613 [14 □ 13 □ 12 □ 11 □ 10 □ 9 □ 8 □ 8 OUTPUT A □ Vcc □ OUT B 7 2 +IN A Q 3 -IN A ^ 4 GND 6 □ +IN B 5 □ -IN B 2 OUT D Vss OUT C OUT C IN C I27 I28 mA5SS 131 7528, 7529

2SC388A

Abstract: transistor 388A transistor 2sc388a Bf 148 TRANSISTOR APC300 AD140 2SC388-A
Contextual Info: 2SC 388A ^ U D y N P N T ^ 5 > ^ S y P J I y 7 l y - t B h ÿ y ^ X 9 ^ O fHÍHPfílgWffl o TV Picuture _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR XP Final Stage Ampl i f i e r A p p l ications • Ä W § r-t; Ope = 3 3 d B Typ. Ic = 4 ~ 1 6 m A MAXIMUM RATINGS

2SB737

Abstract: 2SD786 251D J802 MAS 560 2Sb737 transistor
Contextual Info: 40E D ROHti co Ltd 7 ä2ö * m h "7 > y X £ / T ransistors 0Q054Ö3 3 B R H M 2S B 737 : 737 7 ^ 2 7 -0 ? •fÊ rbb' i £ i l ^ i i Î i Æ / L o w rbb' Low Noise Amp. Epitaxial Planar PNP Silicon Transistor • ÿfJfi"î}‘^ l 3 / ' Dinrïensions • mm

IC-8844

Abstract: PA670 PA670T SC-70A
Contextual Info: "t — ^7 • f y — h v ' J h ^ > V X ^ Silicon Transistor = I > UPA670T N P N X t f t $ r d e '> 77; ^ V ,; = l > h 7 > v x ^ 6 f c f > 2 l§ IS & juPA670T t t , h 7 > V X £ i 2[SS£p*3j& U tz 5. - =E- Jl> K f / w z - r & y , ( U f i : •■ m m )

Contextual Info: 2SA1862F5 h 7 > V ^ £ /Transistors 2SA 1862F5 E i s s i y u - t m pnp y u □ > h ? > v * $ Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ^• '\t'3s0/Dimension8 (U nit: mm) 1) s iB ffT ife S o

2N1035

Abstract: 2N1028 2N1025 2N1036 2N1037 2N1219 2n3298 2N3342 2n328a
Contextual Info: small signal transistors 66 SILICON PNP ALLOY GENERAL PURPOSE TRANSISTORS TYPE NUMBERS 2N 1429 2N 2175 2N 2177 2N 1119 2N 1028 2N 1228 SHA 7532 2N 1229 SHA 7536 2N 1024 2N 1027 2N 3342 2N 3343 2N 1118 2N 1118A 2N 1643 2N 1222 2N 1221 2N 1220 2N 1219 2N 3344

2SC4713K

Abstract: 2SC4774 T106 T146 T147
Contextual Info: h 7 > i / 7, £ /Transistors 2SC 4713K 2S C 4774 2SC4713K/2SC4774 Epitaxial Planar NPN Silicon Transistor raJS /R F Amplifier • ^M ^i& E I/D in ien sio n s Unit : mm 1) Ron 2) • Features 1) Very low output on-state resist­ ance. 2) Low capacitance.

2SC4137

Abstract: 2SC4137V
Contextual Info: f" " 7 > V $ /T ra n sisto rs 2SC4137 2SC4137 NPN ' > '; = ! > Epitaxial Planar NPN Silicon Transistor f lJ Í # i Í lÜ // H¡gh Gain Amp. b7>yz$ ^♦•Jfí'+üHI/Dimensions Unit: mm 1) hFE 7 .8 ± 0 . ? 3 .210 .2 * ¿ 3.3 2) □ V O £ • I 5 y -Z fflm n M IZ

7974a

Abstract: 2SD2403
Contextual Info: ïr — ^ — h '> U =1 > h Silicon Transistor 2SD2403 N P N itf^ v T ^ u ^ v U ju r a « : * « « , 2 S D 2 4 0 3 t t /J 't ë fl» a a* 6 U W x '- ÿ ^ ï - * m m z i> ' p m m x ' f v i - x r m t •# U T * U , D C / D C w m m e : m m ) • K 7 < / * £ iî lC » l? T o

NEC-MH

Abstract: 2SJ206 ITT DIODE W7 ITT DIODE W7 pt A305
Contextual Info: 7 s— S • S /— h NEC MOS M O S Field E ffect Transistor 2SJ206 P ^ ^ ÌV MOS FE T w-mm m t : m m 2 S J 2 0 6 Ü P f - - r ^ ;H tiiM O S F E T T ',5 V t t ïI * I C < 7 ) f Ü * ^ i s W M m W t f r * ï f â % x >f "/ f - > / K i T t . * M O S F E T iif£«)±T "!§g T “è ,

EB-230

Abstract: PA603T mpa603t 048164 IC830
Contextual Info: MOS MWRlto MOS Field Effect Transistor «PA603T U MOS F E T 6 fc> 2 0 S&) P ¿¿PA603T (ä, M OS F E T £ 2 H Jj& f ijl Ltz l ~ £ f 7f £ H I (^ -fï ‘ mm) & 4# o SC-59 ¿[p] L'+f'f Xcos'?"/ Y — 'si MOS F E T £ 2 H i& f lji 0.95 o ¿/PA602T t 3 > 7 ° ij / 's 9 ') T"i£ffl^Tit£

Contextual Info: -7— 5 7 -S / — h NEC ^ M O S rÆ ^ » < 9 M O S Field Effect Pow er Transistors 2SK1 284,1 284-Z N ?-V *JU y ^ — MOS F E T x i f f l 2 S K 1 2 8 4 / 1 2 8 4 - Z ¡±, N f f i ; u > A y x ^ MOS FETT”, 5 V IC 7 ,'h* 4'iSjitX -i •/ -f > 9 " Y ' < - i X T'"to

JI32

Abstract: 1037ak
Contextual Info: 2SA1037AK/2SA1576A/2SA1774 h ~7 > V ^ £ / T ransistors 2 S A 1 0 3 7 A K / 2 S A 1 5 7 6 A 2 S A 1 7 7 4 '> > ; = ! > h - 7 > V * $ Epitaxial Planar PNP Silicon Transistors — flS'htl-^-iififfl/General Small Signal Amp. • N F = 0.5dB Typ. 2S A 1037A K

dvr circuit diagram

Abstract: 74LS247 ttl 74141 TTL 74ls247 74LS248 74LS249 75431 8T13 8T14 8T24
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE 115 55/75325 116 55/75430, 55/75450, 55/75460 117 55/75431, 55/75451 55/75461, 55/75471 SOURCE 118 55/75432, 55/75452, 55/7562, 55/7572 121 8T13, 8T23, 55/75121, 75123 119 55/75433, 55/75453, 55/75463, 55/75473

2SC4771K

Abstract: sn9t
Contextual Info: h 2SC4771K/2SC4772 Transistors 2 S C 4 7 7 1 K ^tf^^V7^7°U-^NPN Epitaxial Planar N PN Silicon Transistor 2 S C 4 7 7 2 Ü H>J& ü1iffl/RF Amplifier • i'W fi^ & H /D im e n s io n s Unit : mm • W * 1) C Ob=0.95pF(VcB=10V) • Features 1) Low output capacitance.

DTL Fairchild

Abstract: 75450 8T14 tic 122 8T13 8T23 8T24 SH2001 SH2002 SH2200
Contextual Info: FAIRCHILD LO G IC /C O N N EC TIO N DIAGRAMS INTERFACE 115 55/75325 116 55/75430, 55/75450, 55/75460 117 55/75431, 55/75451 55/75461, 55/75471 SOURCE 118 55/75432, 55/75452, 55/7562, 55/7572 121 8T13, 8T23, 55/75121, 75123 119 55/75433, 55/75453, 55/75463, 55/75473

transistor DK qj

Abstract: JKS-45 SE-49
Contextual Info: 5 s— S 7 • 5 /— h Compound Transistor BN1L3N 4# $ fB iU « ^ - j ì '. mm 2.0 + 0.2 0 '< - f T x f f i i a è r t J l L T ^ É l ' o f ( R i = 4.7 k£2, R 2= 10 k£2) 4— 6‘ o 2 4k1 =i > V" >J 9 > 9 'J o BA 1L3N £ (T II a Tè £t = 25 °C ) @

IC-8843

Abstract: PA574T uPA574T JUPA574T uA574 uPA574 ufc 101 TK01
Contextual Info: Silicon Transistor ii N P N / //P A 5 7 4 m , h 7 > v X « 2 0 ï§ r tM Ü /c 5 P N i ^ P K PA574T I 5fc?>2Hï S *W B H « M it : mm ) U îto «=JJ $ Ò l o # oSC -70/’f "j fr —v ¿(H U if -f X(7)/\°7 ¿t —v t z h 7 > V *£ £ 2 0 5 & F *3 M ( I Î 7 Î 3 Î »