9N65 Search Results
9N65 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
9N65A
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AK Semiconductor | 9N65A N-channel MOSFET with 650V drain-source voltage, 9A continuous drain current, 0.95Ω typical on-resistance at 10V gate-source voltage, and TO-220/TO-263/TO-252 package options. | Original |
9N65 Price and Stock
Micro Commercial Components MSJP09N65A-BPN-CHANNEL MOSFET, TO-220AB(H) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MSJP09N65A-BP | Tube | 4,990 | 1 |
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onsemi FCPF099N65S3MOSFET N-CH 650V 30A TO220F |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FCPF099N65S3 | Tube | 3,163 | 1 |
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FCPF099N65S3 | Tube | 17 Weeks | 1,000 |
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FCPF099N65S3 | 11,766 |
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FCPF099N65S3 | Bulk | 2,713 | 1 |
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FCPF099N65S3 | 1 |
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FCPF099N65S3 | 17 Weeks | 1,000 |
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FCPF099N65S3 | 18 Weeks | 50 |
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FCPF099N65S3 | 19 Weeks | 50 |
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FCPF099N65S3 | 33,350 |
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FCPF099N65S3 | 10,251 |
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onsemi FCMT099N65S3MOSFET N-CH 650V 30A POWER88 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FCMT099N65S3 | Cut Tape | 2,600 | 1 |
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FCMT099N65S3 | Tape & Reel | 16 Weeks | 3,000 |
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FCMT099N65S3 | Tape & Reel | 3,000 |
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FCMT099N65S3 | 4,393 | 1 |
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FCMT099N65S3 | 1 |
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FCMT099N65S3 | 17 Weeks | 3,000 |
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FCMT099N65S3 | 18 Weeks | 3,000 |
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FCMT099N65S3 | 23,094 |
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FCMT099N65S3 | 185 | 1 |
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onsemi NVB099N65S3SF3 650V EASY 99MOHM D2PAK AUTO |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVB099N65S3 | Cut Tape | 1,451 | 1 |
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NVB099N65S3 | Tape & Reel | 18 Weeks | 800 |
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NVB099N65S3 | 2,403 |
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NVB099N65S3 | Cut Tape | 792 | 1 |
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NVB099N65S3 | 696 | 1 |
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NVB099N65S3 | 1 |
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NVB099N65S3 | 1 |
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NVB099N65S3 | 19 Weeks | 800 |
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NVB099N65S3 | 20 Weeks | 800 |
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onsemi FCH099N65S3-F155MOSFET N-CH 650V 30A TO247-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FCH099N65S3-F155 | Tube | 639 | 1 |
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FCH099N65S3-F155 | 328 |
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FCH099N65S3-F155 | 586 | 1 |
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FCH099N65S3-F155 | 1 |
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FCH099N65S3-F155 | 1 |
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FCH099N65S3-F155 | 16 Weeks | 450 |
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9N65 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 9N65K-MT Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N65K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state |
Original |
9N65K-MT 9N65K-MT QW-R205-017 | |
618 MOSFETContextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N65 Preliminary Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state |
Original |
O-220 QW-R502-618 618 MOSFET | |
9N65
Abstract: 618 MOSFET MOSFET 618 9A650V 618 diode
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Original |
QW-R502-618 9N65 618 MOSFET MOSFET 618 9A650V 618 diode | |
9N65
Abstract: DMG9N DMG9N65CT 9N65CT
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Original |
DMG9N65CT O-220AB AEC-Q101 O-220AB, DS35619 9N65 DMG9N DMG9N65CT 9N65CT | |
650VVGSContextual Info: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. |
Original |
DMG9N65CTI ITO-220AB AEC-Q101 DS36027 650VVGS | |
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Contextual Info: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. |
Original |
DMG9N65CTI ITO-220AB AEC-Q101 DS36027 | |
LTC4098-3.6
Abstract: A20-LCD15.6 SXA-01GW-P0.6
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Original |
IFS75B12N3E4 428654F4 D3265 ECFC24 B32DC CD3289 ECFC26 B32DC6 C36B3 1231423567896AB LTC4098-3.6 A20-LCD15.6 SXA-01GW-P0.6 | |
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Contextual Info: I X Y S CORP lflE D • 4bñb25b 0000L.31 □ ■ □IX Y S IX TE 9N 65X 4 MAXIMUM RATINGS PER DEVICE 9N65X4 Unit Parameter Sym. Drain-Source Voltage (1) Vd ss 650 Vdc Vd g r 650 Vdc Vg s ±20 Vdc Vg s m ±30 V Drain-Gate Voltage (R g s = I.OMft) (1) |
OCR Scan |
0000L IXTE9N65X4 | |
DMG9N65CTContextual Info: 9N65CT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. |
Original |
DMG9N65CT O-220AB AEC-Q101 DS35619 DMG9N65CT | |
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Contextual Info: 9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. |
Original |
DMG9N65CT O-220AB AEC-Q101 DS35619 | |
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Contextual Info: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. |
Original |
DMG9N65CTI ITO-220AB AEC-Q101 DS36027 |