9N65 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 9N65K-MT Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N65K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

618 MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N65 Preliminary Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

9N65

Abstract: 618 MOSFET MOSFET 618 9A650V 618 diode
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N65 Preliminary Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state

9N65

Abstract: DMG9N DMG9N65CT 9N65CT
Contextual Info: 9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.

650VVGS

Contextual Info: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.

Contextual Info: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.

LTC4098-3.6

Abstract: A20-LCD15.6 SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current

Contextual Info: I X Y S CORP lflE D • 4bñb25b 0000L.31 □ ■ □IX Y S IX TE 9N 65X 4 MAXIMUM RATINGS PER DEVICE 9N65X4 Unit Parameter Sym. Drain-Source Voltage (1) Vd ss 650 Vdc Vd g r 650 Vdc Vg s ±20 Vdc Vg s m ±30 V Drain-Gate Voltage (R g s = I.OMft) (1)

DMG9N65CT

Contextual Info: 9N65CT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description •      This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.

Contextual Info: 9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.

Contextual Info: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.