9A DIODE MARKING CODE Search Results

STK630

Contextual Info: STK630FC Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=200V. • Low RDS(on) : 0.30Ω(Typ.) Ordering Information Type NO. Marking Package Code STK630FC STK630

STK630

Abstract: stk630f
Contextual Info: STK630F Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=200V. • Low RDS(on) : 0.40Ω(Max.) Ordering Information Type NO. Marking STK630F STK630 Package Code TO-220F-3L

stk630

Contextual Info: STK630F Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=200V. • Low RDS(on) : 0.30Ω(Typ.) Ordering Information Type NO. Marking STK630F STK630 Package Code TO-220F-3L

SMK630

Contextual Info: SMK630F Advanced N-Ch Power MOSFET Features • • • • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4 (Max.) D G Ordering Information Type N o. M a r k in g Pa ck a ge Code

Contextual Info: SMN09L20D Advanced LOGIC N-Ch MOSFET Features •    PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=17pF(Typ.) Low gate charge : Qg=9nC(Typ.) Low RDS(on) : RDS(on)=0.4 (Max.) D D G Ordering Information Type N o. M a r k ing Pa ck a ge Code

SMK0965F

Abstract: SMK0965
Contextual Info: SMK0965F Advanced N-Ch Power MOSFET Features •    PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code

Contextual Info: SMK630D Advanced N-Ch Power MOSFET Features • • • • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4 (Max.) D D G Ordering Information Type N o. M a r k in g Pa ck a ge Code

Contextual Info: SMK0965FJ Advanced N-Ch Power MOSFET Features •    PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85 (Max.) D G Ordering Information Type N o. M a r k ing Pa ck a ge Code

rf630

Abstract: HIRF630 HIRF630F
Contextual Info: HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 MICROELECTRONICS CORP. HIRF630 / HIRF630F HIRF630 Series Pin Assignment Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain

Contextual Info: SMN09T60WF Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • BVDDS=660V @Tjmax  Low gate charge: Qg=27nC Typ.  Low drain-source On resistance: RDS(on)=1.0Ω (Max.)  100% avalanche tested  RoHS compliant device Ordering Information

Contextual Info: SMN09T50WF Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • BVDDS=550V @Tjmax  Low gate charge: Qg=21nC Typ.  Low drain-source On resistance: RDS(on)=0.85Ω (Max.)  100% avalanche tested  RoHS compliant device Ordering Information

Contextual Info: SMN09T90FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • BVDDS=990V @Tjmax  Low gate charge: Qg=65nC Typ.  Low drain-source On resistance: RDS(on)=1.4Ω (Max.)  RoHS compliant device  Available in Halogen free package

SMK630

Abstract: mosfet 45a 200v
Contextual Info: SMK630F Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)

SMK0965

Abstract: diode marking code 57 SMK0965F
Contextual Info: SMK0965FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85Ω(Max.) D G Ordering Information

Diode smd code 9a

Abstract: diode MARKING CODE 18A D09E60 IDP09E60 IEC61249-2-21
Contextual Info: IDP09E60 Fast Switching Diode Product Summary Features VRRM • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

SMK630

Contextual Info: SMK630D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features •    High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.) D Ordering Information

SMK630

Contextual Info: SMK630F Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)

power Diode 800V 5A

Abstract: D09E120 d09e diode MARKING CODE 18A IDP09E120 IEC61249-2-21 Diode 800V 5A
Contextual Info: IDP09E120 Fast Switching Diode Product Summary Features VRRM • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 9 A VF 1.65 V T jmax 150 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

Contextual Info: TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY VDS V RDS(on)(Ω) Pin Definition: 1. Gate 2. Drain 3. Source 900 1.4 @ VGS =10V ID (A) 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Contextual Info: SMK09L20D Advanced LOGIC N-Ch MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=17pF(Typ.) Low gate charge : Qg=9nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)

Contextual Info: SUN09A65F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.7Ω (Typ.)  Low gate charge: Qg=33nC (Typ.)  Low reverse transfer capacitance: Crss=13pF (Typ.)  Lower EMI noise  RoHS compliant device

Contextual Info: SMN09L20D Advanced LOGIC N-Ch MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=17pF(Typ.) Low gate charge : Qg=9nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)

SMK0965

Abstract: SMK0965F 9a diode marking code
Contextual Info: SMK0965F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=650V Min. Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85Ω(Max.) D G Ordering Information

D09E60

Abstract: IDB09E60 IDP09E60 PG-TO263-3-2 9A MARKING diode 343 18a
Contextual Info: IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO263-3-2 • Low forward voltage • 175°C operating temperature