981214 Search Results

7905 datasheet

Abstract: BUK7105-40AIE BUK7905-40AIE SOT426
Contextual Info: BUK71/7905-40AIE TrenchPLUS standard level FET Rev. 03 — 23 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS

transistor BR 471 A

Abstract: 74 series PHILIPS PHP95N03LT PHB95N03LT PHE95N03LT
Contextual Info: PHP95N03LT; PHB95N03LT; PHE95N03LT N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

TRANSISTOR BUK9508

Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

SMD TRANSISTOR fet

Abstract: smd transistor nc 61 PHB87N03LT PHD87N03LT PHP87N03LT
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP87N03LT, PHB87N03LT PHD87N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible

Contextual Info: RFH RF2125P MICRO DEVICES HIGH POWER LINEAR AM PLIFIER T y p ic a l A p p lic a tio n s • PCS Communication Systems • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment 2 P r o d u c t D e s c r ip tio n

7905

Abstract: 7905 datasheet description of transistor 7905 7905 application note 7905 pin details MA 7905 BUK7105-40ATE BUK7905-40ATE
Contextual Info: BUK71/7905-40ATE TrenchPLUS standard level FET Rev. 01 — 20 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring both very low on-state resistance and

BUK95180-100A

Abstract: BUK96180-100A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

PHP20NQ20T

Abstract: PHB20NQ20T
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHP20NQ20T, PHB20NQ20T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V

PHB45NQ10T

Abstract: PHP45NQ10T PHW45NQ10T to247 pcb footprint
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHB45NQ10T, PHP45NQ10T PHW45NQ10T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance

Contextual Info: BUK75150-55A; BUK76150-55A TrenchMOS standard level FET Rev. 01 — 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Contextual Info: BUK7511-55A; BUK7611-55A TrenchMOS standard level FET Rev. 01 — 1 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

irf630

Abstract: irf630 smd transistor transistor IRF630 irf630s irf630 philips
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF630, IRF630S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V ID = 9 A

BUK7623-75A

Contextual Info: BUK7523-75A; BUK7623-75A TrenchMOS standard level FET Rev. 01 — 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

BUK9535-55A

Abstract: transistor smd 26 BUK953555A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

BUK9560-100A

Abstract: BUK9660-100A BUK956
Contextual Info: BUK9560-100A; BUK9660-100A TrenchMOS logic level FET Rev. 01 — 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

BUK7109-75AIE

Abstract: BUK7909-75AIE BUK790
Contextual Info: BUK71/7909-75AIE TrenchPLUS standard level FET Rev. 01 — 9 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS

BUK117-50DL

Abstract: Soldering guidelines and SMD footprint design BUK128-50DL SC18 buk117
Contextual Info: Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK117-50DL DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package. APPLICATIONS

OC202

Abstract: BUK7520-100A BUK7620-100A
Contextual Info: BUK7520-100A; BUK7620-100A TrenchMOS standard level FET Rev. 01 — 5 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

PHP18NQ10T

Abstract: PHB18NQ10T PHD18NQ10T
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PHP18NQ10T, PHB18NQ10T PHD18NQ10T SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V

BUK9520-100A

Abstract: BUK9620-100A
Contextual Info: BUK9520-100A; BUK9620-100A TrenchMOS logic level FET Rev. 01 — 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

PSMN035-150P

Abstract: PSMN035-150B
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN035-150B, PSMN035-150P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V

PSMN015-100B

Abstract: PSMN015-100P transistor 100p
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN015-100B, PSMN015-100P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V

BUK7640-100A

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

BUK9535-100A

Abstract: BUK9635-100A
Contextual Info: BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 — 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.