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    981111TM2FXHD Search Results

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    Contextual Info: 3LP01C P- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 2.5V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


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    3lp01c-50ma-30ma-100ma+1981111tm2fxhd PDF

    Contextual Info: 5HP01M P- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original
    5hp01m-70ma981111tm2fxhd PDF

    Contextual Info: 5HN01N N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original
    5hn01n100ma981111tm2fxhd PDF

    Contextual Info: 5HN01SS N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original
    5hn01ss100ma981111tm2fxhd PDF

    Contextual Info: 5HN01M N- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original
    5hn01m100ma981111tm2fxhd PDF

    Contextual Info: 5HP01SS P- Channel Silicon MOS FET Very High - Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very High Speed Switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage


    Original
    5hp01ss-40ma-70ma981111tm2fxhd PDF