980 B Search Results

flat top

Contextual Info: American Opto Plus LED L-980-LYC-TR-G Axial Flat Top Gull Wing Lead LED MAIN FEATURES - ROHS COMPLIANCE GULL WING AXIAL FLAT TOP LED WIDE VIEWING ANGLE PACKAGE DIMENSIONS Recommended Pad Layout DIMENSIONS ARE IN MILLIMETERS TOLERANCE IS ± 0.2mm 0.008” UNLESS OTHERWISE NOTED

M83413

Abstract: m83413 8 a DIN 50014 M83413/7-1 DIN EN 50014 STANDARD XH414H IV01E EN50015 M83413/8-A033BB cenelec POSTER
Contextual Info: EEx-Center WeSiTec Peter Weber Ehringhausen 57 42859 Remscheid Tel.: +49 0 2191- 33 980 Fax: +49 (0) 2191- 38 78 59 Mobil: +49 (0) 170-83 02 357 peter.weber@eex-center.de www.eex-center.de Informationen und Produkte zum Explosionschutz nach ATEX • Der mechanische und elektrische Explosionsschutz

VHB25-12S

Abstract: 8-32 UNC-2A ASI10715 ic c 838 transistor 813 TRANSISTOR S 838
Contextual Info: VHB25-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-12S is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: E ØC E B D MAXIMUM RATINGS H I J G #8-32 UNC-2A 4.0 A IC C B • Common Emitter

CLV1025E

Contextual Info: CLV1025E 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev B2 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 865 - 1180 • Tuning Voltage: 1-14 Vdc • MINI-14S - Style Package MHz

g2501

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VMB40-12F

Abstract: ASI10743 216H
Contextual Info: VMB40-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VMB40-12F is Designed for 12.5 V, Medium Band Class C Applications. B .112 x 45° A Ø.125 NOM. FULL R J FEATURES: .125 • Common Emitter • PG = 10 dB @ 40W/175MHz

VHB25-28S

Abstract: ASI10725
Contextual Info: VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B

VMB40-12S

Abstract: ASI10744
Contextual Info: VMB40-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VMB40-12S is Designed for 12.5 V, Medium Band Class C Application. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° A B C E E • Common Emitter • PG = 10 dB at 40 W/175 MHz • Omnigold Metalization System

ASI10666

Abstract: UFT30-28
Contextual Info: UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. PACKAGE STYLE .380 4L FLG. B .112 x 45° FEATURES: A S D Ø.125 NOM. FULL R J • PG = 7.0 dB min. at 25 W/400 MHz • ηD = 60 % Typical

ASI10735

Abstract: VLB40-12F
Contextual Info: VLB40-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB40-12F is a common Emitter transistor, designed for VHF FM amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L FLG FEATURES: B .112 x 45°

JQX-105F-4

Abstract: relay 28vdc 240vac Hongfa Relay 28vdc JQX RELAY 114 10A relay 192 1C 06 30A SPDT power RELAY 240vac wiring diagram 30a 240VAC 20a 28vdc 15A SPDT Miniature Relay
Contextual Info: JQX-105F-4 MINIATURE HIGH POWER RELAY Features • 30A File No.:E134517 switching capabilities • 2.5KV dielectric coil to contacts • Heavy • Class load up to 7,200VA B, Class F insulation available File No.:CH0023315-2002A COIL CONTACT DATA Contact Arrangement

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS FG High Grade Standard Type, For Audio Equipment series "Fine Gold" MUSE acoustic series suited for high grade audio equipment, using state of the art etching techniques. Rich sound in the bass register and clearer high end, most

c38 transistor

Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Contextual Info: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

AZ100EL01

Abstract: AZ100EL01D AZ100EL01T AZ10EL01 AZ10EL01D AZ10EL01T AZTEL01 MC100EL01 MC10EL01
Contextual Info: ARIZONA MICROTEK, INC. AZ10EL01 AZ100EL01 ECL/PECL 4-Input OR/NOR FEATURES • • • • PACKAGE AVAILABILITY 230ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL01 & MC100EL01

ms22759

Abstract: ms27240-3 MS27240-5 ms27240-1 21en75-r1 MS21321-1 602EN222-6 mil-w-5086 ms27240-4 602EN1-6
Contextual Info: Interactive Catalog Supplements Catalog PDFs If you need detailed product information, or help choosing the right product for your application, see our Interactive Catalog. Use the Interactive Catalog to access the most complete and up-to-date information available.

NX8563

Abstract: NX8563-AZ NX8563LB NX8563LF laser diode 1550 nm 160832
Contextual Info: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS 10 mW MIN NX8563 SERIES FEATURES DESCRIPTION • OUTPUT POWER: Pf = 10 mW MIN NEC's NX8563 Series are a 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode

Contextual Info: VOLTAGE CONTROLLED VCXO Q-TECH CORPORATION CRYSTAL CLOCK OSCILLATORS -5.2Vdc & 5.0Vdc - 1kHz to 155.52MHz Description Q-Tech’s voltage-controlled crystal oscillators (VCXO) consist of a varactor diode and associated circuitry such as a bipolar transistor or logic IC amplifier, logic output buffers

MRF247

Abstract: amplifier mrf247 865 RF transistor
Contextual Info: MRF247 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF247 is Designed for 12.5 V VHF large signal amplifier applications up to 175 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 7.0 dB at 75 W/175 MHz

bc 303 transistor

Abstract: transistor bc 318 NX8564-AZ NX8564LE NX8565-AZ NX8565LE NX8566-AZ NX8566LE 160832
Contextual Info: NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS NX8564LE NX8565LE NX8566LE SERIES FEATURES • INTEGRATED ELECTROABSORPTION MODULATOR • VERY LOW DISPERSION PENALTY: Over 360 km 6480 ps/nm , NX8564LE-BC/CC

JQX-102F-P

Abstract: E134517 JQX102FP JQX-102F 20A 250VAC Hongfa Relay CQC02001001955 48VDC inductive relays JQX-102F inductive load relays 48VDC R9933
Contextual Info: JQX-102F MINIATURE HIGH POWER RELAY File No.:E134517 Features * 4.5KV dielectric coil to contact * Heavy load up to 5000VA File No.:R9933807 * Ideal for motor switching * Withstand inrush currentof 80 A File No.:CQC02001001955 CONTACT DATA COIL Contact Arrangement

f423 ph

Abstract: B22K pot F423 LMC60811 B22K design the instrumentation amplifier with bridge lmc6002 LMC6061 LMC6081 LMC6081AIN
Contextual Info: a I LMC6081 N a t i o n S e m i c o n d u c t o r LMC6081 Precision CMOS Single Operational Amplifier General Description Features The LMC6081 is a precision iow offset voltage operational amplifier, capable of single supply operation. Performance characteristics include ultra low input bias current, high volt­

Contextual Info: Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. 2.54 ± 0.1 Dimensions Unit : mm 1.0 Applications Light source for sensors 1.9 Features

EN 3155-018

Abstract: CRIMP TOOL 8526-1344 8526-1344 EN2997se en2997 ESC10KE 8522-878A souriau 8522-2349A NSA 938 152 SA 1602 8526-1348
Contextual Info: 8533 Series Description Applications • Screw coupling • Interchangeable and intermateable with MIL-C 83723 Series III T type • Plug with self locking system • High temperature connector • High level shock and vibration • Thermocouple contacts available except

NF4EB-24V

Abstract: MBB relay NF4EB-5V NF2EB-12V NF2EB-24V NF2EB-48V NF4EB-12V NF4EB-48V
Contextual Info: CSA pending NF-RELAYS FLATPACK RELAY FEATURES 30.2 1.189 1. Flatpack 2. Long seller 20.0 .787 10.8 .425 mm inch SPECIFICATIONS Characteristics at 25°C 77°F, 50% R.H. seal level Contacts Arrangement 1] Max. Typical Movable contact Stationary contact Max. switching power