9745 Search Results

AN-1154

Abstract: IRFH5250DTR2PBF IRFH5250DTRPBF inductor footprint
Contextual Info: PD - 97453A IRFH5250DPbF HEXFET Power MOSFET VDS 25 V RDS on max 1.4 mΩ 0.6 V 27 ns (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 100 h PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits

hex head screws

Abstract: 58246-1 17105-3608 pa 17105-3608 MTA-100 MTA-156 inserter roll pin
Contextual Info: Instruction Sheet 408-9745 Mass Termination Assembly MTA Terminating Head Repair Kits 856600-[ ] Compression PART NUMBER 58246-1 856600 1 856600-1 58246-3 58247-1 856600-2 856600 2 Rev B 2 TERMINATING HEAD REPAIR KIT 28 FEB 08 58247-3 58392-1 DESCRIPTION

Contextual Info: PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±20V max 1.3mΩ@ 10V 2.3mΩ@ 4.5V

DIODE 50A 24V

Contextual Info: PD - 97454A IRFH5302DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 30 V 2.5 mΩ 0.65 V 19 ns 100 h PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits

IRFH5250DTR2PBF

Abstract: AN-1154 IRFH5250DTRPBF IRFH5250
Contextual Info: PD - 97453 IRFH5250DPbF HEXFET Power MOSFET VDS 25 V RDS on max 1.4 mΩ 0.6 V 27 ns (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 100 h PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits

AUF2804S-7P

Contextual Info: PD - 97459A AUTOMOTIVE GRADE AUIRF2804S-7P HEXFET Power MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

U1000

Abstract: STYLE2576
Contextual Info: 9745 Paired - Audio, Control and Instrumentation Cable Non-UL Temperature Rating 80°C UL AWM Style 2576 Bulk Cable Weight 32.1 lbs/1000 ft. Max. Recommended Pulling Tension 55 lbs. Min. Bend Radius (Install) 2.5 in. APPLICABLE SPECIFICATIONS AND AGENCY COMPLIANCE:

irg7ph35

Abstract: irg7ph35ud1pbf irg7ph35ud diode 30s IRG7PH35UD1-EP IRG7PH35UD1
Contextual Info: PD - 97455A IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses

AUIRF1010Z

Abstract: AUIRF1010ZSTRL AN-994 AUIRF1010ZL AUIRF1010ZS SL5000
Contextual Info: PD - 97458 AUIRF1010Z AUIRF1010ZS AUIRF1010ZL AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant

Contextual Info: PD - 97453A IRFH5250DPbF HEXFET Power MOSFET VDS 25 V RDS on max 1.4 mΩ 0.6 V 27 ns (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 100 h PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits

x.r sot 23

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M XR 9745T1 M 9745RT1 The RF Small Signal Line Silicon Lateral FET N-Channel Enhancement-Mode MOSFET 31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET Designed for use in low voltage, moderate power amplifiers such as portable

Contextual Info: PD -97450 IRFH5004PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 40 V 2.6 mΩ 73 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: THIS DRWIN& 15 'JSP'ÆiL ISHED. | ç cdpyioshi is WIRING pi RELEASED FOR PUBI] C*T I ON ,19 ev *.hp incorporated. * ll RIGHT5 wscrved. WIRE DIAGRAM COLOR A WG 24 i 2 RED WHITE 28 3 GREEN 26 4 BLACK 24 5HELL 5H I ELD - 9 7 4 5 4 0-2 974540-1 PART NUMBER

IRGC4067

Abstract: IRGC4067B IRGPS4067
Contextual Info: PD - 97456A IRGC4067B Features • Low VCE on Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • Short Circuit Rated • Square RBSOA • Positive VCE (on) Temperature Coefficient • Tight Parameter Distribution

AUF2804S-7P

Abstract: IRF 5740 smd marking m4 AUIRF2804S-7P AUIRF2804S AN-994 7 pin pulse transformer MOSFET SMD MARKING CODE smd diode code marking 33A
Contextual Info: PD - 97459 AUTOMOTIVE GRADE AUIRF2804S-7P HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

AUIRFR4104

Abstract: AUFR4104 AUIRFR4104TR AUIRFR4104TRL AUIRFR4104TRR AUFU4104
Contextual Info: PD - 97452A AUIRFR4104 AUIRFU4104 AUTOMOTIVE GRADE HEXFET Power MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

rt48v

Abstract: 400-18-6003 celeritek ghz
Contextual Info: 1 974503 98D CELERITEK CELERITEK 400 D~e J Tfi 0 00 45 n74SD3 0Q00QMS r a s=R STEK — Gain Blocks Data Sheet — Jan 88 Cascadable Gain Blocks 0.400 Inch Case Length Drop— in connectorless Design Copper Tungsten Flange for Heat Transfer Hermetically Sealed

AUFR3710Z

Contextual Info: PD - 97451 AUTOMOTIVE GRADE AUIRFR3710Z HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

Contextual Info: PD - 97459A AUTOMOTIVE GRADE AUIRF2804S-7P HEXFET Power MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Contextual Info: PD - 97452 AUIRFR4104 AUIRFU4104 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

IRG7PH35UD1PbF

Abstract: IRG7PH35UD1 IRG7PH35UD1-EP P channel 600v 20a IGBT irg7ph35 C-150 IRG7PH35U IRG7PH35UD ir igbt 1200V 10A igbt 20A 1200v
Contextual Info: PD - 97455 IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT Technology Low Switching Losses Square RBSOA

AUFR3710Z

Abstract: AUIRFR3710Z AUIRFr3710 diode marking 33a on semiconductor MJ200
Contextual Info: PD - 97451 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l AUIRFR3710Z Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

IRFH5004TR2PBF

Abstract: AN-1154 IRFH5004TRPBF
Contextual Info: PD -97450 IRFH5004PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 40 V 2.6 mΩ 73 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

SL5000

Contextual Info: PD - 97458A AUIRF1010Z AUIRF1010ZS AUIRF1010ZL AUTOMOTIVE GRADE Features ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax