9703 Search Results

Contextual Info: 10 13 CKT SIZE EDP. NUMBER ENG. NUMBER 2 050-57-9702 70066-0386 5.00 / .197 (2.54) / .100 (8 .2 6 )/ .325 3 4 050-57-9703 70066-0387 (7.54) / (5.08) / .200 (1 0 .8 0 )/ .425 050-57-9704 70066-0388 (10.08) / .397 (7.62) / .300 (13.34) / .525 5 70066-0389

Contextual Info: PD - 97031A IRF2907ZS-7PPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D RDS on = 3.8mΩ‰ G Description Specifically designed for high current, high reliability

MARKING MZ

Abstract: K 7256 M IRF6662 IRF6662TR1 ci 555
Contextual Info: PD - 97039A IRF6662 DirectFET Power MOSFET Typical values unless otherwise specified Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter

61256-20

Abstract: 61256 SAM9703 spatializer schematic reverb effect 13X2 1N4148 PCM1718E Dream c5 rom
Contextual Info: 9703GS Revision : 27 May 1999 9703 EVALUATION BOARD 9703GS is a 4Mbyte sample set 9703 based « waveblaster » compatible board. It provides professional quality MIDI synthesis, with reverb, echo, 4 bands parametic equalizer and spatializer effect, with minimum

ACF msds

Abstract: NASA SP-R-0022 CONDUCTIVE INK FLEX CIRCUITS D33-30 dupont kapton rohs CONDUCTIVE INK FOR FLEX CIRCUITS glass filled polyester physical properties ASTM-D3330 ideas
Contextual Info: Technical Data April 2011 3M Electrically Conductive Adhesive Transfer Tape 9703 Product Description 3M™ Electrically Conductive Adhesive Transfer Tape 9703 is a pressure sensitive adhesive PSA transfer tape with anisotropic electrical conductivity. The PSA matrix is filled with conductive particles which allow interconnection between

OMR9601

Abstract: IRUH50PA23A1M IRUH50PA23B1M
Contextual Info: PD-97032A IRUH50PA23A1M Ultra Low Dropout Positive Adjustable Linear Regulator Product Summary +5.0Vin at 3.0A Part Number Dropout IO Vin Vout IRUH50PA23A1M 0.4V 3.0A 5.0V 1.265V To VIN - 0.4V 8-LEAD FLAT PACK Features: The IRUH50PA23A1M is a space qualified, ultra low

IRUH33PA13A1M

Abstract: IRUH33PA13B1M OMR9601 IRUH33PA13A
Contextual Info: PD-97033 IRUH33PA13A1M Ultra Low Dropout Positive Adjustable Linear Regulator +3.3Vin at 3.0A Product Summary Part Number Dropout IO Vin Vout IRUH33PA13A1M 0.4V 3.0A 3.3V 1.265V To VIN - 0.4V 8-LEAD FLAT PACK Features: n The IRUH33PA13A1M is a space qualified, ultra low

IRF6662

Abstract: IRF6662TR1
Contextual Info: PD - 97039 IRF6662 DirectFET Power MOSFET Typical values unless otherwise specified Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter

AN-994

Contextual Info: PD - 97031C IRF2907ZS-7PPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D RDS on = 3.8mΩ‰ G Description Specifically designed for high current, high reliability

IRUH50PA23B20

Abstract: MO-078AA OMR9601
Contextual Info: PD-97030 IRUH50PA23B20 Ultra Low Dropout Positive Adjustable Linear Regulator Product Summary +5.0Vin at 3.0A Part Number Dropout IO Vin Vout IRUH50PA23B20 0.4V 3.0A 5.0V 1.265V To VIN - 0.4V MO-078AA Features: The IRUH50PA23B20 is a space qualified, ultra low

AN-994

Contextual Info: PD - 97031C IRF2907ZS-7PPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D RDS on = 3.8mΩ‰ G Description Specifically designed for high current, high reliability

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1225AB Feb-97 9703 S DALLAS DA088517 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-19039 48 Hr

IRFB4227

Abstract: IRFB4227PbF
Contextual Info: PD - 97035C IRFB4227PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

AN-994

Abstract: Mosfet P 110A, 50vds
Contextual Info: PD - 97031D IRF2907ZS-7PPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D RDS on = 3.8mΩ G Description This HEXFET® Power MOSFET utilizes the latest

AN-994

Abstract: Mosfet P 110A,
Contextual Info: PD - 97031C IRF2907ZS-7PPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D RDS on = 3.8mΩ‰ G Description Specifically designed for high current, high reliability

Contextual Info: | CKT SIZE EDP. NUMBER ENG. NUMBER DIM."A" 050-57-9702 050-57-9703 70066-0386 70066-0387 5.00 / .197 (7.54)/ .297 (2.54) / .100 (8.26) / .325 (5.08) / .200 050-57-9704 70066-0388 (10.08) / .397 70066-0389 6 7 050-57-9705 050-57-9706 050-57-9707 8 050-57-9708

IRF4905SPbF

Abstract: IRF4905S IRL3103L
Contextual Info: PD - 97034 IRF4905SPbF IRF4905LPbF HEXFET Power MOSFET Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S

Contextual Info: PD - 97036B IRFI4227PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

Contextual Info: PD - 97031D IRF2907ZS-7PPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 75V RDS on = 3.8mΩ G Description This HEXFET® Power MOSFET utilizes the latest

CG130

Abstract: V/L175C L175C IN 47 46A
Contextual Info: PD - 97035D IRFB4227PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

AN-994

Contextual Info: PD - 97031 IRF2907ZS-7PPbF Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description D VDSS = 75V RDS on = 3.8mΩ‰ G ID = 160A

Contextual Info: This document was generated on 03/30/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 50-57-9703 Active C-Grid / SL Products 2.54mm SL™ Crimp Housing, Single Row, Version N, TPA™ with Positive Latch, 3

TDA8006

Abstract: CL560
Contextual Info: APPLICATION NOTE EASY SOFTWARE DEVELOPMENT FOR TDA8006 Preliminary Library Reference Releas e 1. 0 AN /97038 This version is usable with TDA8006- 719 C51 KIEL Compiler Philips Semiconductors EAS Y S OFTWARE DEVELOPMENT FOR TDA8006 Preli mi nary Li brary Reference

POWER MOSFET 4600

Contextual Info: PD - 97036B IRFI4227PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications