96GHZ Search Results

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain G ldB=13dB at 1.96GHz CHARACTERISTICS SYMBOL

cq 531

Abstract: cq 529 tpm1919 TPM1919-60
Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.96GHz CHARACTERISTICS Output Power at ldB

inp hemt power amplifier

Abstract: NS 2P N218 94GHz 100ghz MMIC POWER AMPLIFIER hemt 94GHz amplifier CI0402 N218
Contextual Info: NS 2P N218 CI0402 17 Aug. 2004 Preliminary 78 GHz – 100 GHz High - Power Amplifier Features Wideband operation: 78 GHz – 100 GHz Pout = 17 dBm typ, Pin = 5 dBm P(-1dB) = 11 dBm (typ) Linear Gain: 14 – 23 dB Linear Gain Control Range: 10 dB WR-10 Waveguide Interface

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T P M 1 9 1 9 -6 0 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Partially Matched Type PldB=48.0dBm at 1.96GHz ■ Hermetically Sealed Package High Power Gain GldB=13dB at 1.96GHz CHARACTERISTICS Output Power at ldB

inp hemt power amplifier

Abstract: 100ghz MMIC POWER AMPLIFIER hemt 94GHz
Contextual Info: EL07-292-601-008 CI0621 May 2007 Preliminary 88 GHz – 105 GHz High - Power Amplifier Features Wideband operation: 88 GHz – 105 GHz Pout = 18 dBm typ, Pin = 5 dBm P(-1dB) = 12 dBm (typ) Linear Gain: 17 – 20 dB Linear Gain Control Range: 8 dB WR-10 Waveguide Interface

Contextual Info: All rights reserved 2013 OMMIC Fabrication de MMIC Intégrant des MEMS RF Brice GRANDCHAMP b.grandchamp@ommic.com RF MEMS workshop, Microwave & RF salon, Paris, April 2013 Plan OMMIC technologies Development of MEMS at OMMIC All rights reserved © 2013 OMMIC