9697 Search Results

NTC SG 120

Abstract: A1004SG22P
Contextual Info: 2 1 ATP CURVE TEMP COEF @ 25°C: 3 `.25 .50 1 9.06 BETA: 25/85°C 3976 ±50 TEMPERATURE °C R t/R25 -50 -40 -30 -20 -10 10 20 25 30 40 50 60 70 80 85 90 100 110 120 125 667500 335600 176700 96970 55300 32650 19900 12490 10000 8056 5325 3601 2487 1752 1256

T0-257AA

Abstract: 16JYQ100C
Contextual Info: PD-96974 16JYQ100C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 100V Major Ratings and Characteristics Description/Features Characteristics The 16JYQ100C center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of HiRel environments. It is packaged in the hermetic isolated

Contextual Info: PD - 96977C IRF6636 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V Dual Sided Cooling Compatible 

PL181

Contextual Info: THIRD ANGLE PROJECTION AK _— — — F c — _ -K + u - V Î7 REV ECN No. OR A B B M 96972 M 102713 M 103510 R63339 REVISIONS DESCRIPTION NEW RELEASE FROM RAVON MODIFIED HATCH, NOTES k ADDED ".WITH SMOBC" ADD R7 & CHANGE LOCATION DESIGNATORS ADD R7 & CHANGE LOCATION DESIGNATORS

DK QE

Contextual Info: THIRD ANGLE PROJECTION REV ECN No. OR A B B M 96972 M 102713 M 103510 R63339 REVISIONS DESCRIPTION NEW R ELEA S E FROM RAVON DATE D R AUTH 0 2 /0 5 MODIFIED HATCH, NOTES k ADDED ".WITH SMOBC’ 0 1 /0 6 ADD R7 & CHANGE LOCATION DESIGNATORS 0 7 /0 9 ADD R7 & CHANGE LOCATION DESIGNATORS 0 7 /0 9

IRF6678

Abstract: IRF6678TR1
Contextual Info: PD - 96979F IRF6678 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bormide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Dual Sided Cooling Compatible 

Contextual Info: PD - 96975A IRF7832Z HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance

Contextual Info: PD - 96979F IRF6678 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified RoHS compliant containing no lead or bormide  VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V l Dual Sided Cooling Compatible 

Contextual Info: PD - 96978C IRF6611 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V Dual Sided Cooling Compatible 

IRF6626

Abstract: IRF6626TR1 SQ 1201
Contextual Info: PD - 96976D IRF6626 DirectFET™ Power MOSFET ‚ RoHS compliant containing no lead or bromide  l Low Profile <0.7 mm l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters

IRF6678

Abstract: IRF6678TR1
Contextual Info: PD - 96979F IRF6678 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bormide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Dual Sided Cooling Compatible 

IRF7832Z

Abstract: MOSFET NOTEBOOK
Contextual Info: PD - 96975A IRF7832Z HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage

IRF6636

Abstract: IRF6636TR1
Contextual Info: PD - 96977D IRF6636 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V Dual Sided Cooling Compatible 

IRHMB57260SE

Contextual Info: PD-96971 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMB57260SE 200V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHMB57260SE Radiation Level RDS(on) 100K Rads (Si) 0.044Ω ID 45A Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides

Contextual Info: PD - 96976B IRF6626 DirectFET Power MOSFET RoHS compliant containing no lead or bromide Low Profile <0.7 mm Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync. FET and some Control FET

IRF6611

Abstract: IRF6611TR1
Contextual Info: PD - 96978E IRF6611 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified l l l l l l l l l RoHS compliant containing no lead or bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V Dual Sided Cooling Compatible 

TB-337

Abstract: 98-PL-184
Contextual Info: THIRD ANGLE PROJECTION /H K -K + u - — F c— — REVISIONS DESCRIPTION REV ECN No. — OR A B B _ M 96972 M 102713 M 103510 R63339 NEW R ELEA S E FROM RAVON MODIFIED HATCH, NOTES k ADDED ".WITH SMOBC” ADD R7 & CHANGE LOCATION DESIGNATORS ADD R7 & CHANGE LOCATION DESIGNATORS

98-PL-179

Contextual Info: REV ECN No. OR A B B M 96972 M l0 2 7 1 3 M 103 5 1 0 R 63339 REVISIONS DESCRIPTION NEW RELEASE FROM RAVON MODIFIED HATCH, NOTES k ADDED ".WITH SMOBC" ADD R7 & CHANGE LOCATION DESIGNATORS ADD R7 & CHANGE LOCATION DESIGNATORS DATE DR AUTH 0 3 /0 5 0 1 /0 6

5082-9399

Abstract: handling of beam lead diodes 5082-9394 C-190
Contextual Info: H E W L E T T ^ PACKARD COMPONENTS Features INTEGRATED PLANAR SURFACE Easier Bonding, Stronger Leads CIRCUITS BEAM LEAD SCHOTTKY DIODE QUADS FOR 5082-9394-9399 DOUBLE BALANCED 5082-9696-9697 MIXERS 1-18 GHZ PASSIVATED Stable, Reliable Performance H IG H U N IFO R M ITY

IRF6678

Abstract: IRF6678TR1
Contextual Info: PD - 96979B IRF6678 DirectFET Power MOSFET Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Ultra Low Package Inductance Qg tot Qgd Qgs2

kard

Abstract: ic 9399 g 5082-9394 5082-9395
Contextual Info: DE I 44475A4 4447584 DDDSfla? 1 | HEWLE TT- PAC KARD, m HEW LETT PACKARD 58C CMPNTS 02827 7* - D 07-07 BEAM LEAD SCHOTTKY DIODE QUADS FOR 5082-9394-9399 DOUBLE BALANCED 5082-9696-9697 MIXERS 1-18 GHZ Features PLANAR SURFACE Easier Bonding, Stronger Leads

Contextual Info: PD - 96978 IRF6611 DirectFET Power MOSFET Typical values unless otherwise specified Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching above 1MHz Ideal for CPU Core DC-DC Converters

Contextual Info: PD - 96977 IRF6636 DirectFET Power MOSFET Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V Ultra Low Package Inductance Qg tot Qgd Qgs2

Contextual Info: PD - 96977D IRF6636 DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified RoHS compliant containing no lead or bromide  VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V l Dual Sided Cooling Compatible 