95036 Search Results

AN-994

Abstract: C-150 EIA-541 IRFR120 of transistor C 4212
Contextual Info: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: D -SU B CONNECTORS 95019, 95036 Series - MALE PCB typ e * Glass filled polyester UL 94V -0 * Phosphor bronze * Selected tin/lead in tail area selected gold in contact area both over nickel overall * Current rating: 3A * Contact resistance: 20 milliohms max.

AN-994

Abstract: C-150 EIA-541 IRFR120
Contextual Info: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRFP250

Abstract: UFB60FA20P
Contextual Info: UFB60FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

IRFP250

Abstract: UFB200FA20P
Contextual Info: UFB200FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 240 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

Contextual Info: MMO&. Programming Hardware Manufacturers January 1998. ver 4 Introduction Table 1 lists the manufacturers that offer programming hardware support for Altera devices. Contact manufacturers directly for up-to-date details on product features, specific device support, and product availability.

bytek Programmers

Contextual Info: Programming Hardware Manufacturers June 1996, ver. 3 In tro d u c tio n Table 1 lists the m anufacturers th at offer p rogram m ing h ard w are su p p o rt for A ltera devices. A ltera recom m ends contacting m anu factu rers directly for up-to-date details on p ro d u ct features, specific device su p p o rt, and

VS-GB75SA120UP

Contextual Info: Not Available for New Designs, Use VS-GB90SA120U VS-GB75SA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • • • • • • • • SOT-227 PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 75 A at 95 °C

Contextual Info: Not recommended for new designs, use VS-FA72SA50LC VS-FA57SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 57 A FEATURES • • • • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating

Contextual Info: VS-UFH60GA60P www.vishay.com Vishay Semiconductors Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package  VISOL = 2500 VAC • Hyperfast reverse recovery • Optimized for power conversion: welding and industrial

Contextual Info: Not Available for New Designs, Use VS-UFB130FA60 UFB120FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape

Contextual Info: UFB120FA40P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

Contextual Info: VS-UFB200CB40P www.vishay.com Vishay Semiconductors Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A FEATURES • Not insulated package • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Optimized for power conversion: welding and industrial

VS-GB75DA120UP

Contextual Info: Not recommended for new designs, use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy

VS-GB100DA60UP

Contextual Info: VS-GB100DA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft

Contextual Info: Not Available for New Designs, Use VS-HFA90FA120 HFA80FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 80 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal

Contextual Info: Not Available for New Designs, Use VS-UFB230FA60 UFB200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape

Contextual Info: HFA120FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly

Contextual Info: Not Available for New Designs, Use VS-UFB80FA40 UFB60FA40P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape

Contextual Info: Not recommended for new designs, use VS-FA40SA50LC VS-FA38SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated

Contextual Info: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available

SOT-227 Package

Abstract: SOT-227 SOT-227 heatsink UFH60GA60P IRFP250 UFH60GA60P in use
Contextual Info: UFH60GA60P Vishay High Power Products Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Hyperfast reverse recovery • Optimized for power conversion: welding and industrial

ga200sa60up

Abstract: N-CHANNEL INSULATED GATE TYPE
Contextual Info: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses