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    NXP Semiconductors N74F194N,602

    IC REG BIDIR PSH PULL 4BIT 16DIP
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    DigiKey N74F194N,602 Tube
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    Rochester Electronics N74F194N,602 1,175 1
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    Rochester Electronics LLC N74F194N,602

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    DigiKey N74F194N,602 Tube 305
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    Microchip Technology Inc APT94N60L2C3G

    MOSFET N-CH 600V 94A 264 MAX
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    Newark APT94N60L2C3G Bulk 25
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    Microchip Technology Inc APT94N60L2C3G Tube 26 Weeks
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    Chip Stock APT94N60L2C3G 170
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    IBS Electronics APT94N60L2C3G 1
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    Microchip Technology Inc APT94N60L2C3

    PowerField-EffectTransistor,94AI(D),600V,0.035ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET
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    Chip Stock APT94N60L2C3 170
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    94N60 Datasheets Context Search

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    94n60

    Abstract: IXKK94N60C3 94N60C3 UPS SIEMENS ID100
    Contextual Info: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKK 94N60C3 VDSS = 600 V ID25 = 94 A Ω RDS on = 35 mΩ Low RDS(on), High Voltage, Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1


    Original     		94N60C3 ID100 O-264 728B1 065B1 123B1 94n60 IXKK94N60C3 94N60C3 UPS SIEMENS ID100 PDF

    Contextual Info: ADVANCE TECHNICAL INFORMATION Power MOSFET IXKK 94N60C VDSS = 600 V ID25 = 94 A Ω RDS on = 35 mΩ Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VGS Continuous ±20 V ID25


    Original     		94N60C ID100 O-264 reduce80 728B1 065B1 123B1 PDF