9473 Search Results

Contextual Info: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description

40EH

Abstract: 2.4mm 2.9mm
Contextual Info: ATTENUATOR SETS SMA, Type N, 2.9mm, & 2.4mm, up to 50 GHz SPECIFICATIONS: Models: 9401, 9402, 9403, 9404, 9405, 9406, 9407, 9408, 9473, 9411, 9412, 9413, 9414, 9415, 9416 Electrical: Frequency Range Standard dB Values See Table See Table or create your own set from dB values of your choice

Contextual Info: PD - 94739A IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

IRFB18N50K equivalent

Contextual Info: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description

irfc20

Abstract: irfb20n50k
Contextual Info: PD - 94736 IRFC20N50KB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.25Ω

AN-994

Abstract: IRF530S IRL3803 IRL3803VL IRL3803VS
Contextual Info: PD - 94735 IRL3803VS IRL3803VL HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3803VS Low-profile through-hole (IRL3803VL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V

Contextual Info: ATTENUATOR SETS SMA, Type N, 2.9mm, & 2.4mm, up to 50 GHz SPECIFICATIONS: Models: 9401, 9402, 9403, 9404, 9405, 9406, 9407, 9408, 9473, 9411, 9412, 9413, 9414, 9415, 9416 Electrical: Frequency Range Standard dB Values See Table See Table or create your own set from dB values of your choice

IRF 3250

Abstract: swiching transistor td 1410 transistor IRF 630 ir igbt 1200V 10A P channel 600v 20a IGBT 1000V 20A transistor irf 100v 200A C-150 IRG4PH40UD2
Contextual Info: PD - 94739A IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

IRFP32N50K equivalent

Contextual Info: PD - 94730 IRFC32N50KB D HEXFET 500V RDS on = 0.16Ω (max.) 6" Wafer Power MOSFET Die in Wafer Form 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ Key Electrical Characteristics (TO-247 package) l G l Parameter V(BR)DSS RDS(on)

9416

Contextual Info: ATTENUATOR SETS SMA, Type N, 2.9mm, & 2.4mm, up to 50 GHz SPECIFICATIONS: Models: 9401, 9402, 9403, 9404, 9405, 9406, 9407, 9408, 9473, 9411, 9412, 9413, 9414, 9415, 9416 Electrical: Frequency Range Standard dB Values See Table See Table or create your own set from dB values of your choice

Contextual Info: PD - 94734 IRL3803V HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 5.5mΩ G ID = 140A‡ S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD - 94735 IRL3803VS IRL3803VL HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3803VS Low-profile through-hole (IRL3803VL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V

loher

Abstract: 94735
Contextual Info: 94735-OO XX 7 >-PACKAGING OPTIONS SEE NOTE 4 — PLATING OPTIONS SEE NOTE 2 TERMINAL UPPER CONTACT TERMINAL UPPER CONTACT NOTES: 1.HOUSING MATERIAU POLYPHENELYENE SULFIDE -40X GLASS.COLOR-NATURAL BROWN 2.TERMINAL MATERAL: UPPER TERMINAL: 17410 BERYLLIUM COPPER

9412 transistor pdf datasheet

Abstract: 9412 transistor 947-3
Contextual Info: ATTENUATOR SETS SMA, Type N, 2.9mm, & 2.4mm, up to 50 GHz SPECIFICATIONS: Models: 9401-9408. 9411-9416, 9473 & 9477 Electrical: Frequency Range Standard dB Values See Table See Table or create your own set from dB values of your choice Power Handling Models 9401 - 9412 9473 & 9477

71A marking

Abstract: AN-994 IRF530S IRL3803 IRL3803VL IRL3803VS
Contextual Info: PD - 94735 IRL3803VS IRL3803VL HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3803VS Low-profile through-hole (IRL3803VL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V

irf 3250

Abstract: ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410
Contextual Info: PD - 94739 IRG4PH40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

IRF1010

Abstract: IRL3803V irf1010 applications
Contextual Info: PD - 94734 IRL3803V HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 5.5mΩ G ID = 140A‡ S Description Advanced HEXFET® Power MOSFETs from International

diode 71A

Abstract: IRF1010 IRL3803V
Contextual Info: PD - 94734 IRL3803V HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 5.5mΩ G ID = 140A‡ S Description Advanced HEXFET® Power MOSFETs from International

E 94733

Abstract: F9473 E 94733 3
Contextual Info: SAW Bandpass Filter 9473 Features GSM applications Usable bandwidth of 25 MHz No impedance matching require for operation at 50 Ω Ceramic Surface Mounted Device Package 3.0 mm * 3.0 mm Single-ended Operation RoHS Compliant Package Dimensions 1 2 I 9473

Contextual Info: PD - 94737 IRFC11N50AB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.52Ω

Contextual Info: ATTENUATOR SETS SMA, Type N, 2.9mm, & 2.4mm, up to 50 GHz SPECIFICATIONS: Models: 9401-9408. 9411-9416, 9473 & 9477 Electrical: Frequency Range Standard dB Values See Table See Table or create your own set from dB values of your choice Power Handling Models 9401 - 9412 9473 & 9477

Contextual Info: 2 ECN APP'D. BY DATE REV 1 /3 1 /0 6 AO 7461 JM 5 /2 2 /1 2 A1 9473 SMN NOTES: 1 - PLUG KIT CONSISTS OF : PRE—INSERTED PLUG HOUSING & SHIELD 2 - MATERIALS : FRONT HOUSING PLASTIC : CLEAR POLYCARBONATE, UL 9 4 -V O CONTACTS : PHOSPHOR BRONZE, SELECTIVE GOLD PLATING

Contextual Info: SN54ALS04B, SN54AS04, SN74ALS04B, SN74AS04 HEX INVERTERS SDAS063B – APRIL 1982 – REVISED DECEMBER 1994 SN54ALS04B, SN54AS04 . . . J PACKAGE SN74ALS04B, SN74AS04 . . . D OR N PACKAGE TOP VIEW Package Options Include Plastic Small-Outline (D) Packages, Ceramic Chip

Contextual Info: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents ADS1220 www.ti.com SBAS501A – MAY 2013 – REVISED JULY 2013 Low-Power, Low-Noise, 24-Bit, Analog-to-Digital Converter for Small-Signal Sensors FEATURES DESCRIPTION •