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    IRFI840G

    Abstract: C-150 IRGIB7B60KD
    Contextual Info: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		94620birgib7b60kdo-220abirfi840g+1c-150 PDF

    IRFI840G

    Abstract: ic MARKING QG C-150 IRGIB7B60KD
    Contextual Info: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		94620birgib7b60kdo-220abirfi840g+2ic marking qgc-150 PDF

    Contextual Info: PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGIB7B60KD C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		94620birgib7b60kdo-220ab PDF