9424 Search Results

420 Diode

Abstract: ir igbt 1200V 40A IRGPS40B120UD TRANSISTOR N 1380 600 300 SC igbt 40A 600V 3IRGPS40B120UD
Contextual Info: PD- 94240 IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94245 IRFR15N20D IRFU15N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Contextual Info: Datasheet | Switches 9400 SERIES Managed Gigabit Ethernet Switches with Enhanced Security and Layer 2-4 Intelligence AT-9424T/GB-xx* Layer 2+ switch with 24 ports of 10/100/1000T plus 2 combo GBIC slots unpopulated AT-9424T/SP-xx Layer 2+ switch with 24 ports of

Contextual Info: This document was generated on 08/16/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 94240-2818 Active MOX Products 2.54mm Pitch, MOX Header, 3.50mm Grid, Through Hole, SPS, Vertical, 18 Circuit, Black

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

Contextual Info: PD - 94242 IRFC43N50KB D HEXFET Power MOSFET Die in Wafer Form 500V RDS on =0.090Ω 6" Wafer G S Electrical Characteristics Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance

80SCLQ060

Contextual Info: PD -94248 80SCLQ060 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 80 Amp, 60V Major Ratings and Characteristics Characteristics Description/Features 80SCLQ060 Units IF AV 80 A VRRM (Per Leg) 60 V 400 A 0.64 V IFSM @ tp = 8.3ms half-sine (Per Leg) VF @ 40Apk, TJ =125°C

Contextual Info: Datasheet | Switches AT-9424T/POE 24 Port 10/100/1000T Standalone Power over Ethernet Managed Layer 3 Switch AT-9424T/POE-xx Layer 3 Power over Ethernet managed switch with 20 ports 10/100/1000T, 4 x 10/100/1000T / SFP combo ports Product Overview The AT-9424T/POE is an ideal Gigabit-to-thedesk Layer 3 Gigabit switch. Power over

Contextual Info: PD - 94247 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M5210 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5M5210 -100V RDS(on) 0.07Ω ID -34A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRHG563110

Abstract: IRHG567110 MO-036AB
Contextual Info: PD - 94246B IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

IRF4435

Abstract: IR*435 MS-012AA
Contextual Info: PD- 94243 IRF4435 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -30V RDS on = 0.020Ω T o p V ie w Description These P-channel HEXFET® Power MOSFETs from

IRGPS40B120UD

Abstract: ic MARKING QG IRFPS37N50A 1000V 20A transistor
Contextual Info: PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

BTKENS-T1043Z

Abstract: BTKXNS-T1049Z BTKANS
Contextual Info: Sheet1 TYPE 10K TOKO Part Number BTKENS-T1043Z BTKENS-T1044Z BTKENS-T1045Z BTKENS-T1046Z BTKXNS-T1047Z BTKXNS-T1048Z BTKXNS-9455HM TKXNF-9427HM BTKXNS-9454HM TKXNF-9426HM BTKXNS-T1049Z BTKXNS-9453HM TKXNF-9425HM BTKXNS-9452HM TKXNF-9424HM BTKXNS-T1050Z TKXNS-9451HM

IRF MOSFET 100A 200v

Abstract: AN1001 IRFR120 IRFR15N20D IRFU120 IRFU15N20D U120
Contextual Info: PD - 94245 IRFR15N20D IRFU15N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

Contextual Info: Sensing and Control Honeywell PO Box 9424 Springfield, IL 62794-9424 USA 98000 SERIES LCD HOUR METER MODULE FEATURES/SPECIFICATIONS RANGE LCD MODULE 98755 0 TO 99,999.9 hours DIGIT HEIGHT 6 mm RUNNING INDICATOR FLASHING Hour Glass Icon PIN Memory Positive, Negative, Enable,

Contextual Info: This document was generated on 08/16/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 94240-3818 Active MOX Products 2.54mm Pitch, MOX Header, 3.50mm Grid, Through Hole, PBT, Vertical, 18 Circuit, Gray

IRHG563110

Abstract: IRHG567110 MO-036AB
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

U15N2

Abstract: AN1001 IRFR120 IRFR15N20D IRFU120 IRFU15N20D U120 U15N20
Contextual Info: PD - 94245 IRFR15N20D IRFU15N20D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See

IRF5M5210

Contextual Info: PD - 94247 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M5210 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5M5210 -100V RDS(on) 0.07Ω ID -34A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

mosfet 1200V 40A

Abstract: MOSFET 40A 600V ir igbt 1200V 40A DIODE 2800 igbt 1200V 40A short circuit igbt 40A 600V 4772 mosfet driver Diode 1200V 40A IGBT 600V 40A IGBT 600V 40A diode
Contextual Info: PROVISIONAL PD - 94240 IRGPS40B120UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA

IRHG563110

Abstract: IRHG567110 MO-036AB
Contextual Info: PD - 94246 IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

IRFC43N50KB

Abstract: IRFPS43N50K Power MOSFET Wafer 082S
Contextual Info: PD - 94242 IRFC43N50KB D HEXFET Power MOSFET Die in Wafer Form 500V RDS on =0.090Ω 6" Wafer G S Electrical Characteristics Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance

Contextual Info: PD-94248A 80SCLQ060 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 80 Amp, 60V Major Ratings and Characteristics Characteristics 80SCLQ060 Units IF AV 80 A VRRM (Per Leg) 60 V 400 A 0.64 V IFSM @ tp = 8.3ms half-sine (Per Leg) VF @ 40Apk, TJ =125°C (Per Leg)

Contextual Info: Datasheet | Switches AT-9424T 24 Port 10/100/1000T Standalone Managed Layer 3 Switch AT-9424T-xx Layer 3 managed switch with 20 ports 10/100/1000T, 4 x 10/100/1000T / SFP combo ports Product Overview The AT-9424T is an ideal Gigabit-to-the-desk Layer 3 Gigabit switch. It comes in a 1RU form