940 NM Search Results

Contextual Info: Phototransistors End Look Chip Part Nu mber Material Electrical & Optical Characteristics Wave length p nm Lens Colo r 940(400-1100) BPT-BP0314 940(400-1100) 940(400-1100) 940(400-1100) BPT-BP0334 940(400-1100) AMERICAN BRIGHT Max. Min. Max. 0.65 0.50 30

ML309

Abstract: M151 MI31T MI31TA MI32T MI32TA MI37T MI38T MI51T MIB37T
Contextual Info: Infrared Emitting Diodes TYPEE p A.p V f MAX 2 6 1/2 NO. nm TYP (mW) (mA) (V) (mA) MI31T MI31TA 940 880 0.5 2.8 20 20 1.6 1.8 20 20 MI32T MI32TA 940 880 0.5 2.8 20 20 1.6 1.8 MI37T MIB37T 940 940 2.0 2.0 20 20 MI38T MIB38T 940 940 2.0 2.0 MI51T M151 TA 940

Contextual Info: Phototransistors End Look Chip Part Nu mber Electrical & Optical Characteristics Wave length p nm Materi al BPT-BP0331 Si-Phototransistor 940(400-1100) BPT-BP1331 940(400-1100) (NPN) BPT-BP2331 940(400-1100) BPT-BP0931 Si-Phototransistor 940(750-1100) BPT-BP1931

EL-23F

Abstract: EL1L2 EL23F EL-1L2
Contextual Info: g ss Infrared E m itting D iodes E M IT T E R S INFRARED EMITTING DIODES GaAs (Ta=25°C) Type No. ae (deg.) Typ. 100 940 ± 10 1.7 100 940 ;36 100 1.7 100 940 ± 10 15.4 100 1.7 100 940 + 30 2.7 50 1.5 50 940 ±32 2.0 60 1.6 60 940 ±30 0.7 50 1.6 50 940

Contextual Info: Phototransistors Side Look Chip Part Nu mber Materi al BPT-NP03C1 Electrical & Optical Characteristics Wave length p nm Lens Colo r 940(400-1100) Si-Phototransistor BPT-NP13C1 940(400-1100) 940(400-1100) Si-Phototransistor BPT-NP13C2 940(400-1100) AMERICAN BRIGHT

Emitter

Abstract: APG2C1-940
Contextual Info: APG2C1-940 High Power Single Chip LED APG2C1-940 is a GaAlAs based, high power 940 nm single chip LED in standard emitter package for general application. Specifications • • • • • Structure: GaAlAs Peak Wavelength: 940 nm Optical Output Power: typ. 50 mW

BPT-BP2334

Abstract: IR10
Contextual Info: Phototransistors End Look Chip Part Nu mber Material Si-Phototransistor 940 400-1100 Water Clear (NPN) 940(400-1100) BPT-BP2314 940(400-1100) BPT-BP0334 Si-Phototransistor BPT-BP1334 Wave length p(nm) Lens Colo r 940(400-1100) BPT-BP0314 BPT-BP1314 Electrical & Optical Characteristics

BPT-BP0A31

Abstract: IR09 BPT-BP0331 BPT-BP2931 BPT-BP1A31
Contextual Info: Phototransistors End Look Chip Part Nu mber Electrical & Optical Characteristics Wave length p nm Materi al BPT-BP0331 Si-Phototransistor 940(400-1100) BPT-BP1331 940(400-1100) (NPN) BPT-BP2331 940(400-1100) BPT-BP0931 Si-Phototransistor 940(750-1100) BPT-BP1931

BPT-BP0314

Abstract: npn 940 BPT-BP2334
Contextual Info: Phototransistors End Look Chip Part Nu mber Material Si-Phototransistor 940 400-1100 Water Clear (NPN) 940(400-1100) BPT-BP2314 940(400-1100) BPT-BP0334 Si-Phototransistor BPT-BP1334 Wave length p(nm) Lens Colo r 940(400-1100) BPT-BP0314 BPT-BP1314 Electrical & Optical Characteristics

Contextual Info: ' I Case Type EmittingMaterial j ,W a ve ! Len9th j Apeak nm Angle of half sensitivity Case-colour Dimension Fig.-No. i L -9 32 P 3C 940 L-9 3 2 P 3 B T 940 blue-transparent L -5 3 P 3 C 940 water-clear 940 blue-transparent CO 3 mm O o 11 00 7 o0 water-clear

AEC-Q101-REV-C

Abstract: 4233
Contextual Info: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4233 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • Niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunktwellenlänge 940 nm

Contextual Info: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4239 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • Niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunktwellenlänge 940 nm

xc 250

Abstract: XC-55-P XC-01 XC-02 XC-06 XC-1209 XC-55-F XC-940 XC-941 XC-944
Contextual Info: HIGH OUTPUT 940 nm INFRARED EMITTERS HIGH OUTPUT 697 nm VISIBLE EMITTERS Plastic Infrared Emitters XC-1209 Low Profile Visible Emitter TO-46 Infrared Emitters XC-940 XC-941 XC-55-F Series Plastic Visible Emitters 697 VISIBLE EMITTERS 940 nm HIGH OUTPUT INFRARED EMITTERS

BPT-NP23C1

Abstract: BPT-NP03C1 BPT-NP03C2 BPT-NP13C1 BPT-NP13C2 BPT-NP23C2 npn 940
Contextual Info: Phototransistors Side Look Chip Part Nu mber Materi al BPT-NP03C1 BPT-NP13C1 Wave length p nm Lens Colo r 940(400-1100) Si-Phototransistor (NPN) BPT-NP23C1 940(400-1100) Water Clear 940(400-1100) BPT-NP03C2 BPT-NP13C2 Electrical & Optical Characteristics

Contextual Info: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4239 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunkts-Wellenlänge 940 nm

Contextual Info: Phototransistors Side Look Chip Part Nu mber Materi al BPT-NP03C1 BPT-NP13C1 Wave length p nm Lens Colo r 940(400-1100) Si-Phototransistor (NPN) BPT-NP23C1 940(400-1100) Water Clear 940(400-1100) BPT-NP03C2 BPT-NP13C2 Electrical & Optical Characteristics

Contextual Info: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4233 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunkts-Wellenlänge 940 nm

Contextual Info: Infrared Emitting Diodes nm Po TYP (mw) M I31T 940 1.7 20 1.6 20 Clear transparent M I31TA 880 1.5 20 1.8 20 Clear transparent M I32T 940 1.5 20 1.6 20 Clear transparent M I32TA 880 1.3 20 1.8 20 Clear transparent M I33T 940 4.0 20 1.6 20 Clear transparent

Contextual Info: SMB1N-940-02 rev 1.1 22.01.2015 Description SMB1N-940-02 is a surface mount AlGaAs High Power LED with a typical peak wavelength of 940 nm and radiation of 120 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin.

Contextual Info: epitex Φ5 STEM TYPE LED L850/940/1050-40C00 Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850/940/1050-40C00 multi-wavelength LED ♦Outer dimension (Unit: mm) L850/940/1050-40C consists of an AlGaAs (850, 940nm) and InGaAsP(1050nm) LED

Contextual Info: epitex Φ5 STEM TYPE LED L850/940/1300-40C52 Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850/940/1300-40C52 multi-wavelength LED ♦Outer dimension (Unit: mm) L850/940/1300-40C52 consists of an AlGaAs (850, 940nm) and InGaAsP (1300nm) LED mounted

Contextual Info: epitex Opto-Device & Custom LED Φ5 STEM TYPE LED L850/940/1300-40C52 Lead Pb Free Product – RoHS Compliant L850/940/1300-40C52 multi-wavelength LED ♦Outer dimension (Unit: mm) L850/940/1300-40C52 consists of an AlGaAs (850, 940nm) and InGaAsP (1300nm) LED mounted

L660/735/805/940-40B42

Contextual Info: epitex Opto-Device & Custom LED Φ5 STEM TYPE LED L660/735/805/940-40B42 Lead Pb Free Product RoHS compliant L660/735/805/940-40B42 multi-wavelength LED ♦Outer dimension (Unit: mm) L660/735/805/940-40B42 consists of an AlGaAs (660, 735, 805nm) and GaAs(940nm) LEDs mounted

Contextual Info: epitex Φ5 STEM TYPE LED L850/940/1050-40C00 Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850/940/1050-40C00 multi-wavelength LED ♦Outer dimension (Unit: mm) L850/940/1050-40C consists of an AlGaAs (850, 940nm) and InGaAsP(1050nm) LED