94-1 TRANSISTOR Search Results

A1019

Abstract: A1019 TRANSISTOR DIODE BUZ 94 BUZ94 TC-130-W
Contextual Info: SIEM ENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type v DS h BUZ 94 600 V 7.8 A ^DS on 0.9 Si Package 1> Ordering Code TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Continuous drain current, Pulsed drain current, Symbol Tc = 27 "C

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type V Ds BUZ 94 600 V /d 7.8 A ^DS on Package 1> Ordering Code 0.9 Q TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 27 'C h 7.8 Pulsed drain current, Tc = 25 ”C

sot-23 Marking 75w

Abstract: OPA2683 OPA2684 OPA2694 OPA658 OPA683 OPA684 OPA691 OPA694 OPA695
Contextual Info: OP A6 94 OP A6 94 OPA694 www.ti.com SBOS319G – SEPTEMBER 2004 – REVISED JANUARY 2010 Wideband, Low-Power, Current Feedback Operational Amplifier Check for Samples: OPA694 FEATURES 1 • • • • • • 2 • UNITY GAIN STABLE BANDWIDTH: 1.5GHz HIGH GAIN OF 2V/V BANDWIDTH: 690MHz

Contextual Info: OP A6 94 OP A6 94 OPA694 www.ti.com SBOS319G – SEPTEMBER 2004 – REVISED JANUARY 2010 Wideband, Low-Power, Current Feedback Operational Amplifier Check for Samples: OPA694 FEATURES 1 • • • • • • 2 • UNITY GAIN STABLE BANDWIDTH: 1.5GHz HIGH GAIN OF 2V/V BANDWIDTH: 690MHz

ZUMT491

Contextual Info: ZUMT491 SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 1 – OCTOBER 94 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current IC APPLICATIONS * Ideally suited for space / weight critical applications

2N6714

Abstract: 2N6715 DSA0037489 DSA003748
Contextual Info: 2N6714 2N6715 — NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES vcE~ * 40 volt * Gain of 50 at Ic= 1 Amp * PTOt=1 Watt ABSOLUTE MAXIMUM PARAMETER SYMBOL — Collector-Base Voltage Collector-Emitter Emitter-Base ~ RATINGS. ‘CBO

"marking E1"

Abstract: BFS17 BFS17R BFS17W
Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

ZTX550

Abstract: ZTX551 ztx550 equivalent DSA003768
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain % VCE(sat) - (Volts) -0.8 -0.6 ZTX550 ZTX551 -0.4 IC/IB=10 -0.2

s869t

Abstract: S869TR CASESOT-23 marking A1 TRANSISTOR Telefunken
Contextual Info: S869T/S869TR Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features D High blocking voltages D Transition frequency: fT = 1 GHz 1 2 1 3 3 94 9280 S869T Marking: 869 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

FXT755

Abstract: ZTX755 DSA003758
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT755 ISSUE 1 – FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX755 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

ZTX550

Abstract: ZTX551 IC101
Contextual Info: ZTX550 ZTX551 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS I ISSUE 1- MARCH 94 I FEATURES * * 60 Volt VCEO * Pt,l= 1 Watt 1 Amp continuous current ABSOLUTE MAXIMUM w RATINGS. SYMBOL PARAMETER Collector-Base Voltage ‘CEO ‘EBO —.— Peak Pulse Current

FXT655

Abstract: ZTX655
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT655 ISSUE 1 – FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX655 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

SMD TRANSISTOR MARKING P28

Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
Contextual Info: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes

BFS17

Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX554 ZTX555 UNIT Collector-Base Voltage V CBO -140 -160 V C ollector-Em itter Voltage

T092

Abstract: ZTX552 ZTX553
Contextual Info: ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES * 100 volt Vc.o 1 Amp continuous * Ptot= 1 Watt * current I ABSOLUTE MAXIMUM I RATINGS. E-Line T092 Compatible -~ ~rnitter-Base Voltage -——— v EBO — Peak Pulse Current

pnp Transistor TO92 5V 200mA

Abstract: ZTX755 ZTX776 DSA003775 3270 transistor
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX776 ISSUE 1 – JULY 94 FEATURES * 200 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B REFER TO ZTX755 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

ic 339

Abstract: FXT553 ZTX553 DSA0037545
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT553 ISSUE 1 – FEB 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX553 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT553 ISSUE 1 - FEB 94 FEATURES * 100 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt REFER TO ZTX553 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage v CB0 -120 V Collector-Emitter Voltage

ZTX601B

Abstract: transistor 5k 180 watt lamp planar FXT601B DSA0037551
Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT601B ISSUE 1 – MARCH 94 FEATURES * 160 Volt VCEO * Gain of 5K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages REFER TO ZTX601B FOR GRAPHS

ZTX753

Abstract: T092 ZTX752 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES DSARS0022094.
Contextual Info: I PNP SILICON PLANAR MEDIUM I POWER TRANSISTORS I ZTX752 ZTX753 II 1 ISSUE 2- JULY 94 FEATURES ‘ 100 volt VCEC * 2 Amp continuous * Low saturation * PtOt=1 ‘Watt current voltage E-Line 4BSOLUTE MAXIMUM 1 RATINGS. SYMBOL PARAMETER — Collector-Base Voltage

ZTX654

Abstract: ZTX655 DSA003771
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain % VCE(sat) - (Volts) 100 IC/IB=10

FXT555

Abstract: ZTX555 DSA0037547
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT555 ISSUE 1 – MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX555 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage