93913 Search Results

IRF7470

Contextual Info: PD - 93913A PROVISIONAL IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 40V 0.013Ω 11A Benefits l Ultra-Low Gate Impedance S l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage

IRF7470

Contextual Info: PD- 93913C IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage

EIA-541

Abstract: IRF7470 MS-012AA
Contextual Info: PD- 93913D IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage

Contextual Info: PD- 93913B IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 40V 13mΩ 10A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage

KX-45

Contextual Info: PD - 93913 PROVISIONAL IRF7470 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 40V 0.013Ω 11A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage

VS-GB15XP120KTPBF

Contextual Info: VS-GB15XP120KTPbF www.vishay.com Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses

gb15xp120kt

Abstract: GB15XP120KTPBF 93913
Contextual Info: GB15XP120KTPbF Vishay High Power Products Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses

GB15XP120KTPBF

Abstract: GB11
Contextual Info: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses

Y7G3

Abstract: ne 555E 1a10aa Z441 z523 d6876 mjop d266c kD 242
Contextual Info: 2M 9 9  62$2/ /#/ j44 56789:6;68<=4874klm j44 nbB]ogapme j44 >JC:<=4G8<=oB8B=C5@7Q j44 dbHbbbHbbb48G=7@5J8C>4<J?=45JB= j44 qr`s4>=@<JC: j44 5=BG=7@597=47@C:=t <8F45=BGt4;abocddnue 6J:645=BGt4;abocd`bue  ! "#$%!&'$ $!)*

GB15XP120KTPBF

Abstract: gb15xp120kt HEXFRED DIODE
Contextual Info: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses

GB15XP120K

Contextual Info: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features • Gen. 5 NPT 1200V IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses

MATSUSHITA compressor codes

Abstract: panasonic SH-D Panasonic JSU18X206AQD SH-DPY Air COnditioner toyama refrigerator motor, washing machine motor Matsua Compressor SH-JPS JSU18X206AQD
Contextual Info: Metallized Film Capacitor for Digi-Key April, 2005 Panasonic Electronic Devices Toyama Co., Ltd. Matsushita Electric Industrial Co., Ltd. Metallized Film Capacitors The ratings in the Charts are Typical Ratings. For details, please contact our local sales offices.

9024m

Abstract: M38527 a55485 PA225 PA225 nylon 9908 H 9913 SRS-1-240 SRS-3-900 90823m
Contextual Info: nylon tubular spacers Nylon Spacers for Standard Screw Sizes • Screw Spacers give users an extremely wide selection of tubular spacers for PCB support in almost any elevation • Six basic ID/OD combinations with heights ranging from 1/16" 1.6mm through 1.0" (25.4mm),

Contextual Info: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features • Gen. 5 NPT 1200V IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses

GB15XP120KTPBF

Abstract: diodes jc 817 gb15xp120kt
Contextual Info: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses

PAL16L8 programming algorithm

Abstract: pal 20 medium PAL16R4A-2
Contextual Info: Programmable Array Logic PAL 20-Pin Medium PAL Family General Description The 20-pin Medium PAL family contains four of the most popular PAL architectures used in industry. National Semi­ conductor’s advanced Schottky TTL process with titanium tungsten fusible links is used in manufacturing the standard,

GB15XP120KTPBF

Contextual Info: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses

2CSC400002D0208

Abstract: 12v 200 ohm 1c/o relay MTME-485-SUI-LCD-96 ABB RD2 earth leakage relay ANR96 ANR96-230 LEONE RELAY 12V 20A 5v 100 ohm 1c/o relay ABB anr96 MTME-485-LCD-96
Contextual Info: In consideration of modifications to Standards and materials, the characteristics and overall dimensions indicated in this catalogue may be considered binding only following confirmation by ABB Copyright 2010 ABB. All right reserved. System pro M compact and other modular devices for low voltage installation