937 Search Results

Contextual Info: PART NAME PART No. IP67 SERIES NEMA DIE CAST ALUMINUM BOX B IPS-3905 3.780 .579 2.354 .333 TYP. A .937 6.685 REVISION DATE 1/21/2011 3.937 6.134 .315 TYP. A .937 2.906 1.770 RECESS INSIDE BODY DETAILS TOP VIEW 1.772 5.748 6.291 3.937 6.685 .098 TYP. .043 RECESS

no7a

Abstract: NO 7A
Contextual Info: Ref. #: MS-100052 Last Update: 8/18/05 Dimensions: mm In. Contact Configuration N.O. COM. 23.80 (.937) 18 (.708) 16.80 (.661) 14.40 (.567) 6.70 (.263) NO 8.70 (.342) NC 10.30 (.405) .80 (.031) 2x 9(.354) Mounting Holes 2-ø3.10 (ø.122) mounting holes or M3 screw holes

L-937GYW

Contextual Info: T-1 3mm ROUND BI-COLOR LED LAMP Part Number: L-937GYW Green Yellow Features Description UNIFORM LIGHT OUTPUT. The Green source color devices are made with Gallium LOW POWER CONSUMPTION. Phosphide Green Light Emitting Diode. I.C. COMPATIBLE. The Yellow source color devices are made with Gallium

2SA1937

Contextual Info: 937 TOSHIBA 2 S A 1 937 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS High Voltage : V^ e O = —600 V MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Colleetor-Emitter Voltage v CEO

ms3057-4b

Abstract: MS3057-16b
Contextual Info: SCP01J IN-LINE RECEPTACLE A MS3057-*B CABLE CLAMP THREAD Z N CABLE RANGE MAX. BB L J MAX. Z A BB COUPLING THREAD CLASS 2A MAX. 8S 1/2-28 UNEF .812 [20.62] 2.225 [56.52] .844 [21.44] 10S 5/8-24 UNEF .812 [20.62] 2.300 [58.42] 10SL 5/8-24 UNEF .937 [23.80] 12

BAS81

Abstract: BAS82 BAS83 BAS81-GS08
Contextual Info: BAS81.BAS83 Vishay Telefunken Small Signal Schottky Barrier Diodes Features D Integrated protection ring against static discharge D D D D Low capacitance Low leakage current Low forward voltage drop Very low switching time Applications 94 9371 HF–Detector

1058

Contextual Info: Frequency Mixer LRMS-1J Typical Performance Data RF IN (MHz) 0.5 1.0 2.0 5.0 10.0 50.4 90.8 151.3 171.5 211.8 232.0 272.3 292.5 332.8 393.3 413.5 453.8 474.0 514.3 534.5 574.8 595.0 635.4 655.5 695.9 756.4 776.5 816.9 837.0 877.4 897.6 937.9 958.1 998.4

9370

Abstract: B39458-M9370-M100
Contextual Info: SAW Components Data Sheet M 9370 M SAW Components M 9370 M IF Filter for Audio Applications 45,75 MHz Data Sheet Standard Plastic package SIP5K • M/N Features ■ TV IF audio filter with passband for sound carrier at 41,25 MHz Terminals ■ Tinned CuFe alloy

BUP34

Abstract: LE17 900Volts
Contextual Info: SEMELAB LTD 3?E J> m 0133107 Q00Q13M SEP/ÏELAB JUÜ 'Ì 9 >937 3 /VJ3 'y ^ '\ BUP34 NEW PRODUCT SILIC O N N PN MECHANICAL DATA EPITAXIAL PLANAR 10.3. max. 1.3 3.6 2.8 ¿.5max. b-/txx ¥ 5.9 w min. FEATURES 15.8 max. • Very high breakdown voltage L}_. • Low Cob

TO3 RthJA

Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Contextual Info: PD - 93792C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)

ml2803

Abstract: IRLML2803 IRLML6401 43a sot23 Y1 SOT-23 IRLML6401 SOT-23 IRLML2402 IRLML2502 IRLML5103 IRLML6302
Contextual Info: PD- 93756C IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated HEXFET Power MOSFET G 1 VDSS = -12V 3 D S RDS(on) = 0.05Ω 2 Description These P-Channel MOSFETs from International Rectifier

Contextual Info: BA682.BA683 Vishay Telefunken Band Switching Diodes Features D D D D Silicon Planar Diodes Low differential forward resistance Low diode capacitance High reverse impedance Applications 94 9371 Band switching in VHF–tuners Order Instruction Type BA682 BA683

Contextual Info: BA604 Vishay Semiconductors Small Signal Switching Diode Features • Silicon planar diode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Applications • General purpose 94 9371 Mechanical Data Case: MiniMELF SOD-80

IRHM57264SE

Abstract: 254 DIODE
Contextual Info: PD - 93798A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254 IRHM57264SE 250V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57264SE 100K Rads (Si) RDS(on) 0.066Ω ID 35A* TO-254 International Rectifier’s R5TM technology provides

IRLMS 4502 D

Abstract: EIA-541 IRLMS2002 IRLMS6702 IRLMS4502
Contextual Info: PD- 93758D IRLMS2002 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated A D D 1 6 D 2 5 D G 3 4 S VDSS = 20V RDS on = 0.030Ω Top View Description These N-Channel MOSFETs from International Rectifier

IRF820AS

Abstract: AN-994 IRF820A IRF820AL diode SS 16
Contextual Info: PD- 93774A IRF820AS IRF820AL SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

LL4150

Contextual Info: LL4150 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Low forward voltage drop D High forward current capability Applications 94 9371 High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings Tj = 25_C

IRHNJ53130

Abstract: IRHNJ54130 IRHNJ57130 IRHNJ58130
Contextual Info: PD - 93754C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130

IRLMS 4502 D

Abstract: marking t12 sot-23 irlms4502 IRLMS2002 2920A
Contextual Info: PD- 93758C IRLMS2002 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated A D D 1 6 D 2 5 D G 3 4 S VDSS = 20V RDS on = 0.030Ω T o p V ie w Description These N-Channel MOSFETs from International Rectifier

IRHNJ57Z30

Abstract: IRHNJ53Z30 IRHNJ54Z30 IRHNJ58Z30 el 803 s
Contextual Info: PD - 93751A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57Z30 30V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 300K Rads (Si) RDS(on) 0.020Ω 0.020Ω ID 22A* 22A* IRHNJ54Z30

IRHNJ57034

Abstract: IRHNJ53034 IRHNJ54034 IRHNJ58034
Contextual Info: PD - 93752B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57034 60V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω 0.030Ω ID 22A* 22A* IRHNJ54034

24v 12v 10A regulator

Abstract: IRHF53Z30 IRHF54Z30 IRHF57Z30 IRHF58Z30
Contextual Info: PD - 93793 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF57Z30 30V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHF57Z30 100K Rads (Si) IRHF53Z30 300K Rads (Si) RDS(on) 0.045Ω 0.045Ω ID 12A* 12A* IRHF54Z30 600K Rads (Si)

T1189N

Abstract: T1509N T1989N T298N T358N T588N T718N T719N diode 528 6 2
Contextual Info: B6C - Schaltung ~~~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 540 V 1400 V 670 V 1600 V Temp. tA Satzstrom Id [°C] [A] [W] 35 175 260 385 439 585 623 759 890 937 1095 164 246 365 419 557

mosfet motor dc 48v

Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Contextual Info: PD - 93792A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)