936MW Search Results

Contextual Info: a HS-6664RH HARRIS SEMICONDUCTOR PRELIMINARY Radiation Hardened 8K x 8 CMOS PROM January 1994 Features Pinouts 1.2 Micron Radiation Hardened Bulk CMOS Total Dose 3 x 10s RAD Si Transient Output Upset >1 x 10 RAD (Siys Single Event Upset < 1 x 10*1° Errors/Bit-Day

Contextual Info: ADS5271 SBAS313 − JUNE 2004 8-Channel, 12-Bit, 50MSPS ADC with Serial LVDS Interface The device is available in a PowerPAD TQFP-80 package and is specified over a −40°C to +85°C operating range. LCLKN PLL IN5P IN5N The ADS5271 is a high-performance, 50MSPS, 8-channel,

Contextual Info: fS Ì HS-6664RH H A F R F R IS S E M I C O N D U C T O R Radiation Hardened 8K X 8 CMOS PROM September 1995 Features Pinouts 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW • 1.2 Micron Radiation Hardened Bulk CMOS • Total Dose 3 x 105 RAD Si

Contextual Info: 3 HS-65647RH Radiation Hardened December1992 8K x 8 SOS CMOS Static RAM Functional Diagram Features • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 10s RAD SI - Transient Upset >1 x 1011 RAD (Siys - Single Event Upset < 1 x 10'12 Errors/Bit-Day

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MBM10C494-15 65536-BIT BICMOS ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM10C494 it fully decoded 65536 bit BICMOS ECL random access memory designed for main memory, control and buffer storage applications. This device is organized

MH25609AJ-85

Contextual Info: M IT S U B IS H I LSIs MH25609AJ-85, -10,-12/ MH25609AJ A-85,-10,-12 M O D E 2 6 2 1 4 4 -W O R D B Y 9 - B IT D Y N A M IC R A M DESCRIPTIO N PIN C O N F IG U R A T IO N TOP VIE W The M H25609AJ, AJA is 262144 word x 9 bit dynamic RAM and consists of two industry standard 256K x 4

ADS527x

Abstract: ADS5270 ADS5271 ADS5272
Contextual Info: ADS5270 ADS5271 ADS5272 SBAS293 − JANUARY 2004 8-Channel, 12-Bit, 40/50/65MSPS ADC with Serialized LVDS Interface FEATURES The ADS527x provide internal references, or can optionally be driven with external references. Best performance can be achieved through the internal reference mode.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-42S1000LAD32S series is a 1 048 576 wor/js by 32 bits dynamic RAM module Small Outline DIMM on which 2 pieces of 16M DRAM ( uPD 42S18160L) are assembled.

TIS25

Contextual Info: MITSUBISHI LSIs b 2 4 T ñ 2 S QOl.Sûia a M H 2 5 6 0 9 A J- 8 5 ,- 1 0 ,- 1 2 / M H 2 5 6 0 9 A J A -8 5 ,- 1 0 ,-1 2 PAGE MODE 2 6 2 1 4 4 -W O R D BY 9 -B IT DYNAMIC RAM MIT SUB ISHI DESCRIPTION T-46-23-17 RAM and consists of tw o industry standard 256K x 4

HS6664RH programming

Abstract: HS9-6664RH CDFP3-F28 D-10 HS1-6664RH HS-6664RH HS-6664 hs1-6664
Contextual Info: HS-6664RH Radiation Hardened 8K x 8 CMOS PROM September 1995 Features Pinouts • 1.2 Micron Radiation Hardened Bulk CMOS 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW 5 • Total Dose 3 x 10 RAD Si • Transient Output Upset >5 x 108 RAD (Si)/s

CDFP3-F28

Abstract: D-10 HS1-6664RH HS-6664RH HS9-6664RH HS-6664RH Application Note
Contextual Info: HS-6664RH S E M I C O N D U C T O R Radiation Hardened 8K x 8 CMOS PROM September 1995 Features Pinouts • 1.2 Micron Radiation Hardened Bulk CMOS 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW 5 • Total Dose 3 x 10 RAD Si • Transient Output Upset >5 x 108 RAD (Si)/s

MSC23V23258D

Abstract: MSC23V23258D-60BS4 MSC23V23258D-70BS4
Contextual Info: This version: Apr. 13. 1999 Semiconductor MSC23V23258D-xxBS4 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC23V23258D-xxBS4 is a 2,097,152-word x 32-bit CMOS dynamic random access memory module which is composed of four 16Mb 1Mx16 DRAMs in TSOP packages mounted with four decoupling capacitors. This is an

Contextual Info: HS-6664RH HARRIS S E M I C O N D U C T O R Radiation Hardened 8K x 8 CMOS PROM August 1994 Features Pinouts 28 LEAD CERAMIC SBDIP CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW • 1.2 Micron Radiation Hardened Bulk CMOS • Total Dose 3 x 10s RAD Si

Contextual Info: M IT S U B IS H I LSIs g f l| P M H25609AJ-85,-10, -12/ MH25609AJ A-85, -10,-12 PA G E M O D E 2 6 2 1 4 4 - W O R D B Y 9 - B IT D Y N A M IC R A M DESCRIPTION The M H 2 5 6 0 9 A J , A JA is 2 6 2 1 4 4 word x 9 b it dynam ic R A M and consists o f tw o industry standard 2 5 6 K x 4

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-42S1000LAD32S series is a 1 048 576 worjds by 32 bits dynamic RAM module Small Outline DIMM on which 2 pieces of 16M DRAM ( uPD 42S18160L) are assembled.

EE-229

Abstract: ADSP-BF531 ADSP-BF532 ADSP-BF533 DYN400 DYN600
Contextual Info: Engineer-to-Engineer Note a EE-229 Technical notes on using Analog Devices DSPs, processors and development tools Contact our technical support at dsp.support@analog.com and at dsptools.support@analog.com Or visit our on-line resources http://www.analog.com/ee-notes and http://www.analog.com/processors