936D Search Results

Contextual Info: CHART PART NUMBER D E S C R 1P T I O N PD3FRAI FRONT MOUNT BOTT OM EXIT REAR M OUNT BOTT OM EXIT FRONT MOUNT BOTT OM EXIT FRONT MOUNT PD3FRA2 0. 965 PD3FRA3 v v 0.090 [2.29] DIA 2 P L A C E S 0. I IO [ 2 . 7 9 ] D I A C O U N T E R S INK 90° T O 0 . 1 9 7 [ 5 . 0 ] D I A

8E89

Contextual Info: お使いになる前に 取扱説明書 基本操作 電話をかける／受ける 文字入力 電話帳 メール 音・表示・照明の設定 カレンダー セキュリティ 便利な機能 ウィルコムの各種サービス データフォルダ

936D

Contextual Info: –T– OPTIONAL CHAMFER A TERMINAL 6 E U S K B V H 1 2 3 4 5 M L J D 0.010 0.254 M T N G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. TAB CONTOUR OPTIONAL WITHIN DIMENSIONS A AND K. 4. DIMENSIONS U AND V ESTABLISH A MINIMUM

ON semiconductor 340g

Abstract: sot-223 body marking D K Q F
Contextual Info: MMFT2406T1 Preferred Device Power MOSFET 700 mA, 240 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT–223

Contextual Info: NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P–Channel TSOP–6 Features • Ultra Low RDS on • Higher Efficiency Extending Battery Life • Miniature TSOP–6 Surface Mount Package http://onsemi.com 1 AMPERE 20 VOLTS RDS(on) = 90 mW Applications • Power Management in Portable and Battery–Powered Products, i.e.:

marking 724 diode sot-363

Abstract: ultra low level FET TO-236
Contextual Info: NTTD2P02R2 Power MOSFET -2.4 Amps, -20 Volts Dual P–Channel Micro8 Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Micro–8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery

Contextual Info: NTHS5445T1 Product Preview P-Channel 1.8 V G-S MOSFET http://onsemi.com S G D PRODUCT SUMMARY VDS (V) –8.0 rDS(on) (Ω) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 P–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

B1276

Contextual Info:  36 35 DD 6 1 23 4 5 6 1 781 23 4 5 6 9 8 AB C D 8E F    89 F F   8 F    F     8   89    8 F       8 F  8 ! 89     B C D  3 8"8!B#BF $ 8%&8' D ! "8538#B1D7!AB5636$7D%4DAC&BB56

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

U2401

Abstract: 73e42 D1432 4932 74C22
Contextual Info: 1232456773489A4B1CDEF4 23456789ABCDE1 1 F2F1171CF411A3231212F1A141 311C324 4 4 E !"1 C! * &14 +!#1 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 4 174439445 !49"74#7$74 2374#74%744394&D4'474$62(7%4

Contextual Info: NTHD5905T1 Product Preview Dual P-Channel 1.8 V G-S MOSFET http://onsemi.com S2 S1 G2 G1 VDS (V) –8.0 D2 D1 PRODUCT SUMMARY rDS(on) (Ω) ID (A) 0.090 @ VGS = –4.5 V "4.1 0.130 @ VGS = –2.5 V "3.4 0.180 @ VGS = –1.8 V "2.9 MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

TRANSISTOR LWW 20

Abstract: TRANSISTOR LWW 24 marking MH TSSOP8
Contextual Info: MMFT3055V Power MOSFET 1 Amp, 60 Volts N–Channel SOT–223 These Power MOSFETs are designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits

936d

Abstract: NIB6404-5L
Contextual Info: NIB6404-5L Preferred Device Product Preview SMARTDISCRETESt 52 Amps, 40 Volts Self Protected with Temperature Sense N–Channel D2PAK http://onsemi.com SMARTDISCRETES devices are an advanced series of Power MOSFETs which utilize ON Semiconductor’s latest MOSFET

Contextual Info: MMDF2C03HD Preferred Device Power MOSFET 2 Amps, 30 Volts Complementary SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

K 751

Abstract: NTMDC02
Contextual Info: NTMD7C02 Power MOSFET 9.5 Amps, 20 Volts N-Ch 4 Amps, 20 Volts (P-Ch) Complementary SO–8 http://onsemi.com MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol N P Unit Drain–to–Source Voltage VDSS 20 –20 Vdc Gate–to–Source Voltage VGS

Contextual Info: NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO–8 Package Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF MOSFET

Contextual Info: NGD15N41CL Product Preview Ignition IGBT 15 Amps, 410 Volts N–Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

D355D

Abstract: B456F
Contextual Info: Da ta s hee t AS1927 N a n o p o w e r µP S u p e r v i s o r y C i r c u i ts w i th M a n u a l R e s e t a n d Wa t c h d o g Ti m e r 1 23454678294AB6CDECF5  24247E64A DF98A7B7BAD55B754D785B7CA87A48651D7D D58!D 6B !DD736D37D5D61D6D9B86B7D 54"CB"63!D#3""5$D"B13

BD558

Abstract: D938 D934 49/transistor b527
Contextual Info:  36 35 DD 6 1 23 4 5 6 7 3 8 9 A 17B C D EF C D   7F C     7C      7      C  7 3 77 !C " 7#$7% D B1!B1D7"!B5868DB 63#D7D#4 36B7135$D58#D$6B $D 8D74!6B%&918 DAB5498#B C2&'B  48D5AD6A47

6B15

Contextual Info: Da ta s hee t 1 233 44 5 3 46 7 8 9 A A B C 5D E F 5F   B 5   8 5F  57  B    A 59 A  5  B   9 C B 5   3 5BAB9C5FBA 4 5B5 B9!B D853A3D !AB5636A477D658"F#78D723A B$6DA3D 5A3%D8#88#43 C3#&456D#%C' 56D*

74act3301

Abstract: scl4412 75307 equivalent CD4015 jm38510/05101 DISCO DFG840 JM38510/33903BEA 74lvc3245 JM38510/05101BCA JM38510/34001BCA
Contextual Info: N ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 1999 Listing GIDEP Nr: GIDEP Category: Issued: 01/05/99 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following High Reliability product(s):

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

936dmqb

Abstract: 936DM 9936 936FMQB 300C
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 12/14/98 Last Update Date: 01/12/99 Last Major Revision Date: 12/22/98 MN936-X REV 1A0 HEX INVERTER General Description This device contains six independent gates, each of which performs the logic INVERT function.

Contextual Info: NTHS5404T1 Product Preview N-Channel 2.5 V G-S MOSFET http://onsemi.com D G S PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.030 @ VGS = 4.5 V "7.2 0.045 @ VGS = 2.5 V "5.9 N–Channel MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating