935 SMD Search Results

l14 254

Abstract: AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026 BLV904
Contextual Info: APPLICATION NOTE 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019 Philips Semiconductors 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz Application Note AN98019 INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The

MGH80

Abstract: TRANSISTOR SMD catalog AN98017 AN98020 AN98026 BLV909 SMD TRANSISTOR
Contextual Info: APPLICATION NOTE 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz AN98020 Philips Semiconductors 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE

transistor SMD making code e5

Abstract: p89lpc
Contextual Info: P89LPC933/934/935 8-bit microcontroller with accelerated two-clock 80C51 core 4 kB/8 kB 3 V byte-erasable Flash with 8-bit A/D converters Rev. 03 — 24 November 2003 Objective data 1. General description The P89LPC933/934/935 is a single-chip microcontroller, available in low cost

15B14

Contextual Info: P89LPC933/934/935 8-bit microcontroller with accelerated two-clock 80C51 core 4 kB/8 kB 3 V byte-erasable Flash with 8-bit A/D converters Rev. 02 — 1 October 2003 Objective data 1. General description The P89LPC933/934/935 is a single-chip microcontroller, available in low cost

MF1043S-1

Abstract: MF1043 MF1043S
Contextual Info: MF1043S-1 FOR GSM MOBILE TELEPHONE, Rx MF1043S-1 DESCRIPTION FEATURES MF1043S-1 TYPICAL CHARACTERISTICS This SAW filter for the receiving RF circuit of GSM mobile communication equipment operating at 935 MHz ~ 960 MHz. 1. SMD package insures small size, lightweight.

Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BDS933/935/937/939/941 NPN silicon epitaxial base power transistors PINNING -SO T223 DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope SOT223 intended for general

ic 941

Abstract: IC 935 BDS933 BDS935 BDS937 BDS939 BDS941 BOS937 b 939 a MSB002
Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BDS933/935/937/939/941 NPN silicon epitaxial base power transistors PINNING-SOT223 DESCRIPTION PIN 1 2 3 4 NPN silicon epitaxial base transistors in a miniature SMD envelope

MF1043S

Abstract: 935 diode smd datasheet 947 transistor MF1043S-1
Contextual Info: Back to CONTENTS MF1043S-1.0 FOR GSM MOBILE TELEPHONE, Rx MF1043S-1.0 DESCRIPTION FEATURES This SAW filter for the receiving RF circuit of GSM mobile communication equipment operating at 935 MHz ~ 960 MHz. MF1043S-1.0 TYPICAL CHARACTERISTICS 1. SMD package insures small size, lightweight.

MF117

Abstract: 935 diode smd datasheet MF1172V-1 Balun
Contextual Info: Back to CONTENTS MF1172V-1.0 FOR GSM MOBILE TELEPHONE, Rx MF1172V-1.0 DESCRIPTION FEATURES This SAW filter for the receiving RF circuit of GSM mobile communication equipment operating at 935 MHz ~ 960 MHz. MF1172V-1.0 TYPICAL CHARACTERISTICS 1. SMD package insures small size, lightweight.

SAFEB897MAL0F00

Abstract: SAFEB897 935 diode smd datasheet GSM900 murata smd diode marking 325 GSM900 SAFEB897m murata SAW SAFEB897MAL
Contextual Info: SAW FILTER FOR GSM900 Tx Murata part number : SAFEB897MAL0F00 Feature 1. Low Insertion Loss (3.0 dB max.) 2. High Attenuation (at 925 to 935 MHz ; 11 dB min.) 3. Ultra Small SMD package (1.35x1.05mm package) Test Circuit 2 50Ω 3 1 5 4 S.S.G. Package Dimensions

GHB-1104R-O

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1104R-O Description Features !3.0mmx1.0mm SMT LED, 2.0mm THICKNESS. !LOW The Super Bright Orange source color devices are made POWER CONSUMPTION. !WIDE VIEWING ANGLE. !IDEAL

GHB-0805-Y

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0805-Y Features Description !2.0mmx1.25mm SMT LED, 1.1mm THICKNESS. The Super Bright Yellow source color devices !LOW are made with DH InGaAlP on GaAs substrate POWER CONSUMPTION.

GHB-1206L-YG

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-YG Features Description !3.2mmx1.6mm SMT LED,1.8mm THICKNESS. The Green source color devices are made with InGaAlP !LOW POWER CONSUMPTION. on GaAs substrate Light Emitting Diode.

GHB-0402-O

Abstract: 935 diode smd
Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0402-O Description Features !1.0mmx0.5mm SMT LED, 0.5mm THICKNESS. The Super Bright Orange source color devices are !LOW POWER CONSUMPTION. made with DH InGaAlP !WIDE VIEWING ANGLE.

diode sy 170

Abstract: GHB-1206L-R
Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-R Features Description !3.2mmx1.6mm SMT LED,1.8mm THICKNESS. The Hyper Red source color devices are made !LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light

4538

Abstract: MF1172V-1
Contextual Info: MF1172V-1 FOR GSM MOBILE TELEPHONE, Rx MF1172V-1 DESCRIPTION FEATURES This SAW filter for the receiving RF circuit of GSM mobile communication equipment operating at 935 MHz ~ 960 MHz. 1. SMD package insures small size, lightweight. 2. Adjustment free. 3. Low insertion loss and high stop band

5B-21

Abstract: DSF400 DSF947 DSF947.5
Contextual Info: ECS-DSF400.0A-51/DSF947.5B-21 SAW FILTER OPERATING CONDITIONS/ELECTRICAL CHARACTERISTICS PARAMETERS CONDITIONS CENTER FREQUENCY INSERTION LOSS PASS BAND PASS BAND RIPPLE RIPPLE DEVIATION GROUP DELAY RIPPLE ECS-DSF-400.0A-51 TYP 400.0 MIN 935 ~ 960 MHz ±83 KHz

GHB-1104R-B

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1104R-B Features Description !3.0mmx1.0mm SMT LED, 2.0mm THICKNESS. The Blue source color devices are made with !LOW POWER CONSUMPTION. Gan on Sapphire Light Emitting Diode.

GHB-0603-Y

Abstract: yello smd led
Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0603-Y Description The Super Bright Yellow source color devices are Features made with DH InGaAlP on GaAs substrate Light !1.6mmx0.8mm SMT LED, 1.1mm THICKNESS. Emitting Diode.

GHB-0805-O

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0805-O Description Features !2.0mmx1.25mm SMTLED, 1.1mm THICKNESS. The Super Bright Orange source color devices are !LOW POWER CONSUMPTION. made with DH InGaAlP !WIDE VIEWING ANGLE.

Contextual Info: ECS-DSF400.0A-51/DSF947.5B-21 SAW FILTER OPERATING CONDITIONS/ELECTRICAL CHARACTERISTICS PARAMETERS CONDITIONS CENTER FREQUENCY INSERTION LOSS PASS BAND PASS BAND RIPPLE RIPPLE DEVIATION GROUP DELAY RIPPLE MIN 935 ~ 960 MHz MAX ±83 KHz 50 ~ 398.5 MHz 398.5 ~ 399.2 MHz

GHB-0805-B

Abstract: yp36
Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0805-B Features Description !2.0mmx1.25mm SMT LED, 1.1mm THICKNESS. The Blue source color devices are made with GaN !LOW POWER CONSUMPTION. on Sapphire Light Emitting Diode.

GHB-1206-DR

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206-DR Features Description !3.2mmx1.6mm SMT LED, 1.1mm THICKNESS. The Super Bright Red source color devices are made !LOW POWER CONSUMPTION. with Gallium Aluminum Arsenide Red Light Emitting

GHB-1206L-B

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with GaN on SiC Light Emitting Diode.