935 SCHOTTKY DIODE Search Results

Contextual Info: tSENSITRON 120NQ035 120NQ040 120NQ045 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 935, REV. - PLASTIC POWER SCHOTTKY RECTIFIER 35/40/45 V, 120 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:

M2X diode

Abstract: MA3X730 935 schottky diode Diodes MARKING 11 3PIN M2X marking
Contextual Info: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 1.45 + 0.1 3 Forward voltage (DC) VF 0.5 V Reverse voltage (DC) VR 5 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125

103 capacitor

Abstract: marking GC diode ma2x707 935 schottky diode gc capacitor diode marking Gc GC PIN DIODE
Contextual Info: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE 1.6 − 0.1 + 0.2 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and

Contextual Info: EHAlpha Silicon Beamless Schottky Diodes P/N DME, DMF, DMJ Series Features • For Microwave M IC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ W ide Product Range Series Pair, Ring, Bridge

Contextual Info: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1 Reverse voltage (DC) Junction temperature Storage temperature 0.95 + 0.1 0.16 − 0.06 + 0.1 0.1 to 0.3 0.4 ± 0.2 Unit 0 to 0.1

MA2S707

Contextual Info: Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planar type Unit : mm For UHF mixer 1.60 ± 0.05 Symbol + 0.05 2 0.15 ± 0.05 1 0.6 ± 0.05 0.80 − 0.03 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

S3995

Abstract: SMS3992-00 SMS3994 S3996 SMS1528-00 SMS3991-10 Alpha Industries pin diodes SMS3990 SMS3991-50 MARKING S15
Contextual Info: Schottky Mixer and Detector Diodes in EOAlpha Surface Mount Plastic Packages SMS Sériés Features < Æ ° -Æ ^ - For High Volume Commercial Applications Small Surface Mount Packages S0D 323 S O T 23 S 0 T 143 Low Conversion Loss • Tight Parameter Distribution

Contextual Info: Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planar type Unit : mm For UHF mixer 1.60 ± 0.05 + 0.05 Forward voltage Junction temperature Storage temperature + 0.05 Rating 0.15 ± 0.05 2 Unit ea s ht e v tp is :// it pa fo na llo so win ni g c. U

M2X diode

Abstract: MA3X730
Contextual Info: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.45 0.95 + 0.2 Unit Forward voltage (DC) VF 0.5 V Reverse voltage (DC) VR 5 V Junction temperature Tj 125 °C Storage temperature

Contextual Info: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and

103 capacitor

Abstract: MA2X707 marking GC diode
Contextual Info: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 2 M Di ain sc te on na tin nc ue e/ d 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain

DMF5848

Abstract: kaba ka-band mixer
Contextual Info: Silicon Beam-Lead and Chip 0 3 Alpha Schottky Barrier Mixer Diodes DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication

180 Degree hybrid ku band

Contextual Info: Universal Chip Mixer and Detector SchotUcy Barrier Diodes EBAIph CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

DMK4058-000

Abstract: DMK-4058 DMK50 DMK2860-000
Contextual Info: 03 A lpha GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features • Low Noise Figure Low Series Resistance ■ Excellent Cutoff, Low Junction Capacitance ■ Ideal for Image Enhancement Mixers ■ Passivated Planar Construction for Reliability X

dmj4317

Abstract: DMF5848 DME3256 DME3040 ka-band mixer DM228 DME3006 DME3124 dmf5848 diode DMF2820
Contextual Info: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes EHAIph DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication

METAL DETECTOR circuit

Abstract: DDC4717-024
Contextual Info: Zero Bias Silicon Schottky Barrier Detector Diodes EHAlpha CDC, DDC Series Features • Zero Turn On, No Bias Required ■ Low Video Impedance Description Alpha’s series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for

DDB3268-000

Abstract: DDB5098-000 DDB4517-006 kaba DDL6672 CDB7619-000
Contextual Info: Silicon Schottky Barrier Detector Diodes ESAlpha CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications

Si7705DN

Abstract: Si7705DN-T1
Contextual Info: Si7705DN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) - 20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKr Package with Low 1.07-mm Profile ID (A)

Si7705DN

Contextual Info: Si7705DN New Product Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) -20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile

03712

Abstract: Si7705DN
Contextual Info: Si7705DN New Product Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile

Contextual Info: Silicon Schottky Barrier Detector Diodes CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications

Contextual Info: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

Contextual Info: EBAIpha Silicon Beamless Schottky Diodes P/N DME, DMF, DMJ Series Features • For Microwave MIC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ Wide Product Range Series Pair, Ring, Bridge

SMS1046

Abstract: S1526 SMS3994 SMS3988-00 SMS1532-00 SMS1526-10 SMS1043 SMS1046-00 SMS1535-00 SMS1526-50
Contextual Info: .a pfeiiù. - Schottky Mixer and Detector Diodes in E3A lpha Surface Mount Plastic Packages înirnnwiamiiiiiiTTiiïïrrmmmi i nu i h iiii ii'iiiiii'iiiiiiiiiiihi ui^ — ^ SMS Series Features For High Volume Commercial Applications SOD 323 Small Surface Mount Packages