93094MO Search Results

svc251

Contextual Info: Ordering number: EN 774E No.774E i SVC251SPA Diffused Junction Type Silicon Diode Varactor Diode for AFC, CB PLL Features The SVC251SPA is a varactor diode of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in AFC, CB PLL VCO cicuitry.

GMA02

Abstract: on 4708
Contextual Info: Ordering num ber:EN 4708 _ No.4708 GMA02 Silicon Epitaxial Planar Type Very High-Speed Switching Diode F eatu res • Glass sleeve structure • Allowable power dissipation: P = 300mW max. •Interterminal capacitance : C = 3.0pF max. • Breakdown voltage : V r = 220V.

1W ZENER DIODE

Abstract: 9033 diode 1w zener DZF10 DZF11 DZF12 DZF13 DZF15 DZF16 DZF18
Contextual Info: Ordering number:EN4703A DZF6.8 to 36 Silicon Diffused Junction Type 1W Zener Diode Features Package Dimensions • Plastic mold package. · Voltage regulator use. · Allowable power dissipation : P=1W. · Subdivided voltage range : 6.8 to 36. · Zener voltage tolerance : ±10%.

87351

Abstract: LA6523 la652
Contextual Info: 注文コード No.N 4 9 5 9 B 半導体ニューズ No.N4959A をさしかえてください。 モノリシックリニア集積回路 LA6523 3出力パワーオペアンプ 概要 LA6523は民生,産業用に開発した3出力パワーオペアンプである。

1SV268

Contextual Info: Ordering number :EN4923 1SV268 Silicon Epitaxial Type Transmitting, Receiving Antenna-switch Use PIN Diode Features Package Dimensions • Small interterminal capacitance C=0.7pF typ . · Small forward series resistance (rs=0.5Ω typ). unit:mm 1163A [1SV268]

AFC diode

Abstract: SVC251SPA
Contextual Info: Ordering number :EN774E SVC251SPA Diffused Junction Type Silicon Diode Varactor Diode for AFC, CB PLL Features Package Dimensions • The SVC251SPA is a varactor diode of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in AFC, CB PLL

EN4730

Contextual Info: Ordering number:EN4730 ‘_D-TN6 No.4730 Silicon Diffused Junction Type i 6A Bidirectional Thyristor F eatu res •A C power control. * Peak OFF-state voltage : 400, 600V. ■R M S ON-state current : 6A. A b so lu te M axim um R atin g s at Ta = 25°C

DWA010

Abstract: 1164B marking w8
Contextual Info: DWA010 Ordering number : ENN2171D DWA010 Silicon Epitaxial Planar Type Ultrahigh-Speed Switching Diode Features • • • Ideally suited for use in hybrid ICs because of ultrasmall package. High switching speed. Small interterminal capacitance. Specifications

Contextual Info: Ordering num ber: E N 4924 _ 1SV272 No.4924 Silicon E pitaxial Type SAmOi Transmitting/Receiving Antenna-switch Use PIN Diode F e a tu r e s * Series connection of 2 elem ents in a very small-sized package facilitates high-density m ounting and

marking W8

Abstract: 82597 DWA010 1164A
Contextual Info: Ordering number : EN2171C Silicon Epitaxial Planar Type DWA010 Ultrahigh-Speed Switching Diode Features • Ideally suited for use in hybrid ICs because of ultrasmall package. • High switching speed. • Small interterminal capacitance. Absolute Maximum Ratings at Ta=25°C

EN4703

Abstract: DZF16 DZF18 DZF22 DZF24 DZF27 DZF30 DZF33 DZF36
Contextual Info: Ordering num ber: EN4703 DZF6.8 to 36 Silicon Diffused Junction Type 1W Zener Diode F e a tu re s • Plastic mold package. •Voltage regulator use. • Allowable power dissipation : P = 1W. ■Subdivided voltage range : 6.8 to 36V. • Zener voltage tolerance: ±10%

Contextual Info: Ordering number:EN4923 _ 1SV268 No.4923 Silicon E pitaxial Type SANYO, Transmitting/Receiving Antenna-switch Use PIN Diode F e a tu re s • Small interterm in al capacitance C = 0.7pF typ . •Small forward series resistance (rs = 0.5ft typ).

GMA02

Abstract: EN4708 EN470 sanyo 1s
Contextual Info: Ordering number:EN4708 GMA02 Silicon Epitaxial Planar Type Very High-Speed Switching Diode Features Package Dimensions • Glass sleeve structure. · Allowable power dissipation : P=300mW max. · Interterminal capacitance : C=3.0pF max. · Breakdown voltage : VR=220V.

BX703

Abstract: DTN12 DTN12E DTN12G BX70
Contextual Info: Ordering number: EN 473? DTN12 No.4732 Silicon Diffused Junction Type 12A Bidirectional Thyristor Features • AC power control. - Peak O FF-state voltage : 400, 600V. • RMS ON -state current : 12A. A b so lu te M axim um R a tin g s at Ta = 25°C Repetitive Peak

SVC251SPA

Abstract: EN774E Sanyo
Contextual Info: Ordering number :EN774E SVC251SPA Diffused Junction Type Sillicon Diode Varactor Diode for AFC, CB PLL Features Package Dimensions • The SVC251SPA is a varactor diode of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in AFC, CB PLL