62098H Search Results

Contextual Info: Ordering number:EN4730 _ DTN6 Silicon Diffused Junction Type S A § iY O I 6A Bidirectional Thyristor Package Dimensions Features •AC power control. • Peak OFF-state voltage : 400, 600V. * RMS ON-stmc currcnt : 6A, uniCrnm / / * : The gale trigger modes are shown below.

SB007W03C

Contextual Info: Ordering number:EN2936A SB007W03C Schottky Barrier Diode Twin Type • Cathode Common 30V, 70mA Rectifier Applictions Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1169A [SB007W03C] Features · Low forward voltage (VF max=0.55V).

SB007W03S

Contextual Info: Ordering number:EN2937A SB007W03S Schottky Barrier Diode Twin Type • Cathode Common 30V, 70mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1129A [SB007W03S] Features · Low forward voltage (VF max=0.55V).

1164B

Abstract: DWC010
Contextual Info: DWC010 Ordering number : ENN2832D DWC010 Silicon Epitaxial Planar Type Ultrahigh-Speed Switching Diode Features • • • Ideally suited for use in hybrid ICs because of ultrasmall package. High breakdown voltage : VR=200V. Small interterminal capacitance.

GZB10

Abstract: GZB11 GZB12 GZB13 GZB15 GZB16 GZB18
Contextual Info: Ordering number:EN1349C GZB2.0 to 36 Silicon Planar Type 1.0W Zener Diode Features Package Dimensions • Glass sleeve structure. · Voltage regulator, surge absorber applications. · Power dissipation : P=1.0mW. · Zener voltage : VZ=2.0 to 36 V. · Small-sized package : JEDEC DO-41

GMB01

Abstract: GMB01U
Contextual Info: Ordering number:EN1897A GMB01, 01U Epitaxial Planar Type Very High-Speed Switching Diode Features Package Dimensions • Glass sleeve structure. · Allowable power dissipation : P=250mW max. · Interterminal capacitacne : c=3.0pF max. · Reverse recovery time : trr=4.0ns max.

SB01W05S

Contextual Info: Ordering number:EN2989A SB01W05S Schottky Barrier Diode Twin Type • Cathode Common 50V, 100mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1129A [SB01W05S] Features · Low forward voltage (VF max=0.55V).

Contextual Info: Ordering number:EN2794 DSM10 Silicon Diffused Junction Type 1.0A Power Rectifier Features Package Dimensions • Meets the requirements for automatic mounter and permits DSM10-applied sets to be made smaller. · Peak reverse voltage : VRM=200 to 600V. · Average rectified current : IO=1.0A.

GZB10

Abstract: GZB11 GZB12 GZB13
Contextual Info: Ordering number : ENN1349C GZB3.0 to 36 Silicon Planar Type GZB3.0 to 36 1.0W Zener Diode Features • • • • Glass sleeve structure. Voltage regulator, surge absorber applications. Power dissipation : P=1.0W. Zener voltage : VZ=3.0 to 36V. Small-sized package : JEDEC DO-41.

Contextual Info: Ordering number:EN2989A SB01W05S Schottky Barrier Diode Twin Type • Cathode Common 50V, 100mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1129A [SB01W05S] Features · Low forward voltage (VF max=0.55V).

SB0030-01A

Contextual Info: Ordering number:EN2191A SB0030-01A Schottky Barrier Diode 10V, 30mA Detection Applications Features Package Dimensions • Glass sleeve structure. · Detection efficiency : 70%. · Small size Half the size of the DO-35 heretofore in use . unit:mm 1153A [SB0030-01A]

2198

Abstract: SB0015-03A
Contextual Info: Ordering number:EN2198A SB0015-03A Schottky Barrier Diode 30V, 15mA Detection Applications Features Package Dimensions • Glass sleeve structure. · Detection efficiency : 70%. · Small size Half the size of the DO-35 heretofore in use unit:mm 1153A [SB0015-03A]

RL20

Abstract: DTC10C-N DTC10E-N DTC10G-N DTC10-N
Contextual Info: Ordering number:EN2096B DTC10-N Silicon Planar Type 10A Bidirectional Thyristor Features Package Dimensions • Peak OFF-state voltage : 200 to 600V. · RMS ON-state current : 10A. · TO-220 package. unit:mm 1155 [DTC10-N] Specifications Absolute Maximum Ratings at Ta = 25˚C

SB007T03Q

Contextual Info: Ordering number:EN4169A SB007T03Q Schottky Barrier Diode Series Connection 30V, 70mA Rectifier Applications Package Dimensions • Universal-use rectifiers. · High frequency rectification (switching regulators, converters, choppers). unit:mm 1246A [SB007T03Q]

1W ZENER DIODE

Abstract: 9033 diode 1w zener DZF10 DZF11 DZF12 DZF13 DZF15 DZF16 DZF18
Contextual Info: Ordering number:EN4703A DZF6.8 to 36 Silicon Diffused Junction Type 1W Zener Diode Features Package Dimensions • Plastic mold package. · Voltage regulator use. · Allowable power dissipation : P=1W. · Subdivided voltage range : 6.8 to 36. · Zener voltage tolerance : ±10%.

DTM12C-N

Abstract: DTM12E-N DTM12G-N DTM12-N
Contextual Info: Ordering number:EN1880B DTM12-N Silicon Planar Type 12A Bidirectional Thyristor Features Package Dimensions • Insulation type. · Peak OFF-state voltagte : 200 to 600V. · RMS ON-state current : 12A. · TO-220 package. unit:mm 1144 [DTM12-N] * : The gate trigger mode is shown below.

GMA01

Abstract: GMA01U
Contextual Info: Ordering number:EN1065C GMA01, 01U Epitaxial Planar Silicon Diode Very High-Speed Switching, Bias Stabilizing Applications Features Package Dimensions • Glass sleeve structure. · Allowable power dissipation : P=300mW max. · Interterminal capacitance : c=3.0pF max.

SB007W03Q

Contextual Info: Ordering number:EN2938A SB007W03Q Schottky Barrier Diode Twin Type • Cathode Common 30V, 70mA Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1198A [SB007W03Q] Features · Low forward voltage (VF max=0.55V).

18752

Abstract: 18751 circuit DTA08E IT12A
Contextual Info: Ordering number:EN1875A DTA08E Silicon Planar Type 0.8A Bidirectional Thyristor Features Package Dimensions • Low AC power control. · Peak OFF-state voltage : 400V. · RMS ON-state current : 0.8A. · TO-92 package. unit:mm 1141 [DTA08E] *:The gate trigger mode is shown below.

GMA01

Abstract: GMA01U
Contextual Info: Ordering number:EN1065C GMA01, 01U Epitaxial Planar Silicon Diode Very High-Speed Switching, Bias Stabilizing Applications Features Package Dimensions • Glass sleeve structure. · Allowable power dissipation : P=300mW max. · Interterminal capacitance : c=3.0pF max.

Contextual Info: DWC010 Ordering number : ENN2832C DWC010 Silicon Epitaxial Planar Type Ultrahigh-Speed Switching Diode Features • • • Ideally suited for use in hybrid ICs because of ultrasmall package. High breakdown voltage : VR=200V. Small interterminal capacitance.

Contextual Info: Ordering number:EN1349C GZB2.0 to 36 Silicon Planar Type 1.0W Zener Diode Features Package Dimensions • Glass sleeve structure. · Voltage regulator, surge absorber applications. · Power dissipation : P=1.0mW. · Zener voltage : VZ=2.0 to 36 V. · Small-sized package : JEDEC DO-41

SB00703Q

Contextual Info: SB007-03Q Ordering number : EN2939B SANYO Semiconductors DATA SHEET SB007-03Q Schottky Barrier Diode 30V, 70mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • • • Fast reverse recovery time (trr max=10ns)

Contextual Info: Ordering number : EN2939B SB007-03Q Schottky Barrier Diode http://onsemi.com 30V, 70mA, Low IR, Single MCP Applications • High frequency rectification switching regulators, converters, choppers Features • • • • • Fast reverse recovery time (trr max=10ns)