915 TRANSISTOR Search Results

PTB20145

Contextual Info: e PTB 20145 9 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP

Contextual Info: ERICSSON ^ PTB 20145 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP

lc 945 p transistor NPN

Abstract: lc 945 p transistor transistor LC 945 lc 945 transistor
Contextual Info: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20003 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 4 Watts minimum output power, it may be used for

20258

Abstract: IEC-68-2-54 1301P
Contextual Info: e PTB 20258 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

20144

Abstract: IEC-68-2-54 35 W 960 MHz RF POWER TRANSISTOR NPN
Contextual Info: e PTB 20144 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

lc 945 p transistor NPN

Contextual Info: ERICSSON ^ PTB 20145 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor D escription The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications.

Contextual Info: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts m inim um outp ut power, it may be used fo r both CW and PEP

201861A

Abstract: 615R54-021 615R31-040 murata 0402 footprint GRM155R61A105KE15 LQG15HS18NJ02 murata label 1F33 GRM1555C1H330JZ01 murata Label Information
Contextual Info: DATA SHEET SKY65094-360LF: 698-915 MHz Low-Noise Power Amplifier Driver Applications • 2.5G, 3G, 4G wireless infrastructure transceivers • ISM band transmitters • WCS fixed wireless • 3GPP LTE Features • Wideband frequency range: 698 to 915 MHz • Low Noise Figure: 3.2 dB

ADL5371

Abstract: AN-772 germanium transistor pnp psk modulator demodulator vco 6ghz AD9779 ADF4110 ADF4111 ADF4112 ADF4113
Contextual Info: 500 MHz to 1500 MHz Quadrature Modulator ADL5371 FEATURES Output frequency range: 500 MHz to 1500 MHz Modulation bandwidth: >500 MHz 3 dB 1 dB output compression: 14.4 dBm @ 900 MHz Noise floor: −158.6 dBm/Hz @ 915 MHz Sideband suppression: −55 dBc @ 900 MHz

SLD-2083CZ

Abstract: 915 MHz RFID SLD2083CZ GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2
Contextual Info: SLD-2083CZ SLD-2083CZ 12 Watt Discrete LDMOS FET in Ceramic Package 12 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS Package: RF083 Product Description Features „ „ „ 12 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz

Contextual Info: SDM-09120-1Z Product Description 915-960 MHz Class AB 130W Power Amplifier Sirenza Microdevices’ SDM-09120-1Z 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The

Contextual Info: SDM-09120-1Y Product Description 915-960 MHz Class AB 130W Power Amplifier Sirenza Microdevices’ SDM-09120-1Y 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The

Contextual Info: PRODUCT SUMMARY SKY77554-21 Tx Quad-Band / Rx Dual-Band BiFET iPAC FEM for GSM / GPRS 824-915 MHz and 1710-1910 MHz w/ Dual WCDMA TRx Switch Applications Description • Dual-band cellular handsets encompassing - Class 4 GSM850/900 - DCS1800/PCS1900 - Class 12 GPRS multi-slot

Contextual Info: SCS-THOMSON IMEWilLiMOiD STM961-15 RF POWER MODULE DIGITAL CELLULAR APPLICATIONS . • . . LINEAR POWER AM PLIFIER 915-960 MHz 26 VOLTS INPUT/OUTPUT 50 OHMS ■ P o u t = 42 dBm CW or P E P . GAIN = 30 dB PIN CONNECTION DESCRIPTION The STM961 -15 module is designed for digital

Motorola UHF Power Amplifier Module

Abstract: MHW812A3 301H W812 LXJ capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M H W 812A 3 The RF Line U H F P ow er A m p lifier . . . designed for 13 Volt UHF power amplifier applications in industrial and commercial FM equipment operating from 890 to 915 MHz. • 12 W, 8 9 0 -9 1 5 MHz HIGH GAIN RF POWER

915 MHz RFID

Abstract: HSMS-286A METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode
Contextual Info: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz

i231

Abstract: radar "distance measurement" Packard type 56 connectors
Contextual Info: V K ffl H E W L E T T ft "UM P A C K A R D Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface M ount SOT-323 Package • High D etection Sensitivity: Up to 50 mV/^W at 915 MHz

100PF capacitor

Abstract: ceramic filter 10.7MHz SCHEMATIC diagram 433MHZ amplifier schematic BP-60 LQFP-32 RF2917 TL5PF fm receiver single chip FM Receiver Schematic
Contextual Info: RF RF2917 Preliminary M ICRO-DEVICES 433/868/915MHZ FM/FSK RECEIVER T y p ic a l A p p lic a tio n s • Wireless Meter Reading • Remote Data Transfers • Keyless Entry Systems • Wireless Security Systems • 433/868/915 MHz ISM Band Systems P ro d u c t D e s c rip tio n

433MHZ amplifier schematic

Abstract: C6f TRANSISTOR 433mhz signal strength meter ceramic filter 10.7MHz SCHEMATIC diagram rf 433mhz RX 868 RF RECEIVER -433 433MHz VCO 330M C130 LQFP-32
Contextual Info: RF RF2917 Preliminary M ICRO-DEVICES 433/868/915MHZ FM/FSK RECEIVER T y p ic a l A p p lic a tio n s • Wireless Meter Reading • Remote Data Transfers • Keyless Entry Systems • Wireless Security Systems • 433/868/915 MHz ISM Band Systems P ro d u c t D e s c rip tio n

Contextual Info: C T S G S -T H O M S O N S T M 9 6 1 -1 5 RF POW ER MODULE DIGITAL CELLULAR APPLIC ATIO N S PRELIMINARY DATA • . • . LINEAR POWER AMPLIFIER 915-960 MHz 26 VOLTS INPUT/OUTPUT 50 OHMS ■ P o u t = 42 dBm CW or P E P . GAIN = 28.5 dB MIN. PIN CONNECTION

915 MHz RFID

Abstract: 22UF 27PF SLD-3091FZ t85 key SLD3091FZ SLD3091
Contextual Info: Preliminary SLD-3091FZ Pb RoHS Compliant & Green Package 30 Watt Discrete LDMOS FET in Ceramic Flanged Package Product Description Sirenza Microdevices’ SLD-3091FZ is a robust 30 Watt high performance LDMOS transistor designed for operation from 10 to 2200MHz. It is an

CONNECTOR SMA 905 drawing

Abstract: transistor smd 303
Contextual Info: SLD-1083CZ Product Description Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high performance LDMOS transistor designed for operation from to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD-1083CZ is typically used in the design of

0603CS delta

Abstract: CONNECTOR SMA 905 drawing transistor smd 303 Amp. 100 watt fet pot 100K smd SLD-1083CZ ERT-J1VV104J thermistor 100k ERJ-3GSY0R00V SLD1083CZ
Contextual Info: SLD-1083CZ Product Description Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high performance LDMOS transistor designed for operation from to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at a low cost. The SLD-1083CZ is typically used in the design of

transistor smd 303

Abstract: LL1608-F4N7K CONNECTOR SMA 905 drawing SLD-2083 0603CS delta LL1608-F2N7S 80021 Amp. 100 watt fet pot 100K smd SLD-2083CZ
Contextual Info: SLD-2083CZ Product Description Pb RoHS Compliant & Green Package 12 Watt Discrete LDMOS FET in Ceramic Package Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at