9120 MOSFET Search Results

1rfd9120

Abstract: IRFD9120 00LQ
Contextual Info: International k ?r Rectifier PD-9.3311 IRFD 9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching V DSS= -1 0 0 V ^DS on =

HV9111

Abstract: hv9120pj
Contextual Info: H V9110 in O m HV9111 H V 9120 Preliminary High-Voltage Switchmode Controllers Ordering Information_ Feedback + V IN Min Max 10V Voltage 120 V 10V 120 V ±1% ±10% Package Options Package Pins Plastic DIP Ceramic DIP 14 HV9110P

12v to 240v PWM inverter circuit

Abstract: 240v n-channel depletion mosfet HV9120 4k resistor 50w "SMPS Controller" 12v to 240v inverter HV9120NG-G P-Channel Depletion Mosfet datasheet HV9120NG HV9120P
Contextual Info: HV9120 High-Voltage, Current-Mode PWM Controller Features ► ► ► ► ► ► A unique input circuit allows the 9120 to self-start directly from a high voltage input, and subsequently take the power to operate from one of the outputs of the converter it is

4.7uF 400V capacitor

Abstract: capacitor 0.47uf 400v 100n ceramic capacitor 100V R11M2 capacitor c5 0.47uf 400v 100V schottky diode capacitor 0.1uf 400v resistor 1M 1uF 400V capacitor C9 0.1uf 200v
Contextual Info: +13.5V to +16.5V VIN C5 4.7uF 25V 1 R1 1M 2 C1 0.47uF 8 SYNC 16 C2 39nF 3 R3 150k R4 300kHz 33k 4 5 Vin 16.67 15.05 13.33 D1 10MQ 100N D2 CMR1U EXT -04 P1 4 7 2 IRFR 1,12 8,10 9120 9,11 C8 0.6 Ohm 3,5 0.1uF T1 R6 200V 6 1:2 13 100 Lpri=48.8uH CS VP1-0190

Contextual Info: 4 3 0 5 2 7 1 □ □ 5 4 5 ci? tBT • H a r r is HAS IR F F 9120, IR F F 9121 IR F F 9122, IR F F 9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Features Package T 0 -2 0 5 A F • -3.5 A and -4A , -8 0 V and -1 0 0 V BOTTOM VIEW • rDS ON = o .e o n and 0.80 H

IRF9240

Abstract: IRF9143 IRF9513 IRF9632 irf9243 2n6804 IRF9241 IRF9511 IRFD9110 IRF9132
Contextual Info: TH On SON / D I S T R I B U T O R SflE D TCSK Power MOSFETs Rugged-Series Power MOSFETs — P-Channel P aci ag e — • M axim u r n R a tin g s bvdss (V 60 100 150 20 0 <d s (A) r DS(O N) O HM S e AS (m i) 0.6 0.8 2.5 3 3.5 4 5 5.5 6 6.5 10 12 19 15 25

Contextual Info: AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower On-resistance High Speed Switching BVDSS 300V RDS ON 66m ID G 36A S Description AP80N30 from APEC provide the designer with the best combination of

STF6045DV

Abstract: BD405 transistor b 1185 BD 149 transistor
Contextual Info: 3QE D £ v • 7^237 SGS-THOMSON iHiOTMKS DG30SDb B T -33^ S STF6045DF STF6045DV S G S-THOMSON NPN DARLINGTON POWER MODULE ■ ■ ■ ■ . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL

sgs150D

Abstract: NPN DARLINGTON POWER MODULE
Contextual Info: _ 3QE D • T 'le ^ s a ? QDBObflfl rrz SCS-THOMSON ^ 7# — [»^ [IL I g « S 1 ■ ~3>^ S G S 150D A 020D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS ■ LOW Rih JUNCTION TO CASE ■ FREEWHELING DIODE

Contextual Info: AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ High Speed Switching BVDSS 300V RDS ON 66mΩ ID G 36A S Description AP80N30 from APEC provide the designer with the best combination of

80N30W

Abstract: 80N30
Contextual Info: Advanced Power Electronics Corp. AP80N30W-HF-3 N-channel Enhancement-mode Power MOSFET Low On-Resistance D Simple Drive Requirement Fast Switching Characteristics G BV DSS 300V R DS ON 66mΩ ID 36A S Description Advanced Power MOSFETs from APEC provide the designer with the best

80N30W

Abstract: AP80N30W
Contextual Info: AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ High Speed Switching BVDSS 300V RDS ON 66mΩ ID G 88A S Description AP80N30 from APEC provide the designer with the best combination of fast

IRFD9123

Abstract: IRFD9120 MOSFET IRFd9120 44202 FR 9120 irfd 92QS-44168 92GS-4420Z
Contextual Info: Rugged Power MOSFETs File N u m b e r 2285 IRFD9120 IRFD9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -1.0 A and -0.8 A, -60 V and -100 V rDston = 0.6 O and 0.8 Q TERMINAL DIAGRAM Features:

AON6403L

Abstract: FR 9120 aon6403
Contextual Info: AON6403L P-Channel Power Transistor General Description Product Summary The AON6403L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

IRF9120

Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
Contextual Info: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET

axc differential amplifier

Abstract: SI9120 an708 BUZ78
Contextual Info: Tem ic SÌ9120 Semiconductors Universal Input Switchmode Controller Features • 10- to 450-V Input Range • Current-Mode Control • 125-mA Output Drive • Internal Start-Up Circuit • Internal Oscillator 1 MHz • SHUTDOWN and RESET Description The SÌ9120 is a BiC/DMOS integrated circNQTAGuit

AON6403

Contextual Info: AON6403 30V P-Channel MOSFET General Description Product Summary The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

Contextual Info: AON6403 30V P-Channel MOSFET General Description Product Summary The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

IRF09120

Abstract: IRFD9120 RFD9120 IRFD9123 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123
Contextual Info: h e o I MäSS4S2 cmaamfc, i | Data Sheet No. PD-9.331G INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER HEXFET* TRANSISTORS IO R IRFD9120 IRFD91S3 P-CHANNEL HEXDIP" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL IN-LINE PACKAGE -100 VOLT, 0.6 Ohm, 1-Watt HEXDIP

Contextual Info: F s 3 DE D I S C S TH O M S O N ¡[LBgïïËMDes 6 s • 7^2^237 0 0 3 Q S C12 T ■ ' TSD20N1 OOF TSD20N100V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE - thomson _ TENTATIVE DATA TYPE TSD20N100F/V . . ■ . ■ V dss RDS on 1000 V 0.5 n

schematic diagram UPS

Abstract: TSD180N10V k 815 MOSFET smps&ups TSD180N10F
Contextual Info: 3QE D • OGBOS^ä □ ■ ^ I & L i fi SGS-THOMSON immwms; * J n ~ l£ TSD180N10F TSD180N10V N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOIISON TENTATIVE DATA TY P E TS D 180N 10F /V V dss RDS on Id 100 V 0.007 i l 180 A . VERY HIGH DENSITY POWER MOS

TSD40N50DV

Abstract: aval d 317 transistor
Contextual Info: BQE D m 7eia,i237_Qa3as'-iti ? • ■ TSD40N50DF TSD40N50DV SGS-THOMSON üLiOTTiOiöOi s N - CHANNEL ENHANCEMENT MODE _ FREDFET MODULE S-THOMSON g TENTATIVE DATA TY P E V dss RüS on Id TS D 40N 50D F/D V 500 V 0.12 £2 40 A . POWER MOS TRANSISTOR MODULE WITH

SD 1496 transistor

Abstract: TSD2M350F
Contextual Info: 30 E T> n 7 ^ 5 3 7 QG3D534 SGS-THOMSON ^ ^ HLJOTMWi ¿ 5 7 '5 7 TSD2M350F TSD2M350V s 6 S-THOMSON N - CHANNEL ENHANCEMENT MODE _ ISOFET POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V TSD2M350F/V dss 400 V RDS on 0.150 Id n 30 A • . . . HIGH CURRENT POWER MOS MODULE

Contextual Info: 3ÜE D r r j Ä 7# “Y~fi m 712q237 OOBObgg M • " ~ p CTM<? S G S -T H O M S O N WlE ô [lLieïïE(ô)B!]DOS B Y T 2 3 0 P l(V ) - 1 2 0 0 S-THÖMS0N FAST RECOVERY RECTIFIER DIODE ■ VERY HIGH REVERSE VOLTAGE CAPABILI­ TY ■ VERY LOW REVERSE RECOVERY TIME