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IRHN9130 Abstract: IRHN93130 Contextual Info: PD - 90886C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for	Original	90886c irhn9130 irhn93130 -480a/+3-100v mil-std-750 mll-std-750	PDF
Contextual Info: PD - 90886C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for	Original	90886c irhn9130 irhn93130 -480a/+3-100v mil-std-750 mll-std-750	PDF

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IRHN9130

Abstract: IRHN93130
Contextual Info: PD - 90886C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for

Original

90886c irhn9130 irhn93130 -480a/+3

PDF

Contextual Info: PD - 90886C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for

Original

90886c irhn9130 irhn93130 -480a/+3

PDF