P-Channel IGBT
Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure
Contextual Info: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .
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p-channel igbtptigbt 600v 10aruf resistorcalculation of igbt snubber+6mosfet 8a 900v to-220thyristor 5a 600v cross referencedrive base bjtn-channel jfet 100v depletionvtomtrench mosfet termination structure
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9016 transistor
Abstract: F 9016 transistor npn 9016 transistor 9016 97 G transistor ic st 9016 hFE is transistor 9016 npn transistor 9016 npn
Contextual Info: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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9016 transistorf 9016 transistornpn 9016 transistor9016+597 g transistor icst 9016hfe is transistor9016 npntransistor 9016 npn
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9016 transistor
Abstract: F 9016 transistor 9016 st 9016 transistor 9016 npn npn 9016 transistor
Contextual Info: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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9016 transistorf 9016 transistor9016st 9016+2transistor 9016 npnnpn 9016 transistor
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9016 transistor
Abstract: F 9016 transistor npn 9016 transistor
Contextual Info: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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9016 transistorf 9016 transistornpn 9016 transistor |
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npn 9016 transistor
Abstract: 9016 transistor transistor 9016 npn st 9016 F 9016 transistor 9016 transistor 9016 H 9016 9016 NPN transistor st9016
Contextual Info: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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npn 9016 transistor9016 transistortransistor 9016 npnst 9016+6f 9016 transistor9016transistor 9016h 90169016 npn transistorst9016
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diode st 4148
Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
Contextual Info: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)
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mmbt8050lt1ot-23-ll4001-ll4007-ll4148+101n4001-1n4007diode st 4148st 4148ll4148 st8050 sot-23st 80509016 transistor9014 sot 234148 sttransistor 4148
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JE9016
Abstract: A78G
Contextual Info: NPN SILICON TRANSISTOR ELECTRON DEVICE JE9016 DESCR IPTIO N The JE 9016 is designed fo r use in A M converter and FM PAC K A G E D IM E N S IO N S in m illim e ters lin ch es 5.2 MAX. RF am p lifie r o f low noise. FE A TU R E S • High to ta l power dissipation. Py : 400 mW)
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je9016a78g |
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transistor c 9018
Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
Contextual Info: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF
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t0-92b500fi10kfitransistor c 9018+9transistor cl 1009011 9012 9013 9014 9018transistor 9014 npntransistor 9013 npn audio outputv. 9014 c9016 transistoraudio output transistor npn 90139011 npn transistornpn 9016 transistor
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AM9016
Abstract: AM9016EPC AM9016DPC AM9016FPC AM9016EDC AM9016CPC AM9016DDC AM9016CDC AM9016FDC am9016e
Contextual Info: Am9016 16,384 x 1 D ynam ic R/W Random A ccess M em ory DISTINCTIVE CHARACTERISTICS G E N E R A L D ESCRIPTIO N • • • The A m 9016 is a high speed, 16 k-bit, dynam ic, read/w rite random access m em ory. It is organized as 16,384 words by 1 b it per w ord and is packaged in a standard 16-pin DIP. The
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mk4116462mw150ns320ns+1316-pinmil-std-883am901616k-bitam9016epcam9016dpcam9016fpcam9016edcam9016cpcam9016ddcam9016cdcam9016fdcam9016e
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CP1005
Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
Contextual Info: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I
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km90iikm90i5km901i/8km90ii/8+14km90i4km9015km90ito-92acp10059011 9012 9013 9014 9018c 9014 transistortransistor 9014 c npn9011 npn transistor9011 transistor9015 pnp90169013 npn output transistortransistor npn c 9014
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9014 ch
Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor
Contextual Info: »v'.-T i V.y*, 7 “ •1 v í- j m £?| P Im I I I m . C-iS.fi w - f , , :;1 | AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011
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o-92a9014 chtransistor npn c 90149018 transistor+7transistor c 90189011 9012 9013 9014 9018100-10l9018transistor 9013 npn audio output90119012 pnp transistor
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9011 9012 9013 9014 9018
Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
Contextual Info: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER
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cl9000t0-92b10kfi9011 9012 9013 9014 9018+99011 npn transistortransistor c 9018npn 9016 transistorf 9016 transistortransistor 9014 c npnc 9014 transistor9018 transistor9016 transistorpnp transistor 9015
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transistor 716-analog
Abstract: 500MSPS AD9006
Contextual Info: □ ANALOG DEVICES FEATURES 500MSPS Encode Rate Very Low Input Capacitance: 8pF 30dB SNR @ 200MHz Analog Input MIL-STD-883 Available Bipolar Input Range ± 1 V Demultiplexed Outputs (AD9016) MIL-STD-883-Compliant Versions Available High Speed 6-Bit A/D Converters
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ad9006/ad9016500msps200mhzmil-std-883+4ad9016mil-std-883-compliantad9006transistor 716-analog
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transistor mje340
Abstract: MJE340 b c e MJE340
Contextual Info: MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E 2.25 Typical
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mje340o-126transistor mje340mje340 b c e |
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BU208D
Abstract: NPN Transistor 1500V 20a H 9645
Contextual Info: BU208D Horizontal Deflection Transistor NPN Silicon Horizontal Defection Transistors with integrated damper diodes are specifically designed for use in large screen colour deflection circuits. Features: • VCES = 1500V VCEO sus = 700V (Minimum). • Low Saturation
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bu208dnpn transistor 1500v 20ah 9645 |
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equivalent transistor 2n3704
Abstract: T2N3705 2N3704 2N3705 T2N3704
Contextual Info: T2N3704, T2N3705 Series Bipolar Transistors Description: NPN Silicon Planar Epitaxial Transistors. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H 5° 1.14 1.40 1.53 K 12.70 - L 1.982 2.082
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t2n3704t2n3705equivalent transistor 2n37042n3704+12n3705
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transistor BC461
Abstract: BC461 BC461 transistor CHARACTERISTICS OF BC461
Contextual Info: BC461 Medium Power Transistor Features: • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation. • PNP Epitaxial Planar Silicon Transistors. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39
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bc461transistor bc461bc461 transistorcharacteristics of bc461 |
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MJE340
Abstract: MJE340 datasheet MJE340 b c e
Contextual Info: MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical
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mje340o-126mje340 datasheetmje340 b c e |
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MPSA14
Abstract: transistor 7333
Contextual Info: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H K 5° 1.40 1.14 1.53 12.70 Dimensions : Millimetres Pin Configuration 1. Collector 2. Base 3. Emitter Page 1
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mpsa14transistor 7333 |
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MJE350 b c e
Abstract: Power Transistors TO-126 Case MJE350
Contextual Info: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package
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mje350o-126mje350 b c epower transistors to-126 case |
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8805 VOLTAGE REGULATOR
Abstract: MJE350 b c e MJE350 pnp mje350
Contextual Info: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package
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mje350o-1268805 voltage regulatormje350 b c e+1pnp mje350
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7333 A
Abstract: transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333
Contextual Info: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70
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mpsa067333 atransistor mpsa06npn 9016 transistor+1transistor 7333
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transistor 2N5415
Abstract: 2N5415 ic tc 4066 diagram
Contextual Info: 1611580 Feature: • PNP transistors. Description: The 2N5415 are high voltage silicon epitaxial planar PNP transistors in JEDEC TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and
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2n5415transistor 2n5415ic tc 4066 diagram |
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7333 A
Abstract: Power Transistors TO-126 Case farnell ic 901 BD437
Contextual Info: BD437 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C
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bd437o-1267333 apower transistors to-126 case+2farnellic 901
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