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    900V N-CHANNEL QFET Search Results

    900V N-CHANNEL QFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P
    		Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P PDF
    TLP292-4
    		Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Datasheet
    TLP295-4
    		Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Datasheet
    TC7PCI3212MT
    		Toshiba Electronic Devices & Storage Corporation 2 Differential Channel, 2:1 multiplexer/demultiplexer, SPDT, TQFN20, -40 to 85 degC Datasheet
    TLP294-4
    		Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Datasheet

    900V N-CHANNEL QFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FQB2NA90

    Abstract: FQI2NA90
    Contextual Info: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB2NA90 FQI2NA90 FQI2NA90 PDF

    SSF7N90A

    Contextual Info: N-CHANNEL POWER MOSFET SSF7N90A FEATURES BVDSS = 900V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 900V


    Original     		SSF7N90A SSF7N90A PDF

    SSH10N90A

    Abstract: MOSFET 10A
    Contextual Info: N-CHANNEL POWER MOSFET SSH10N90A FEATURES BVDSS = 900V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 900V


    Original     		SSH10N90A SSH10N90A MOSFET 10A PDF

    Contextual Info: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB2NA90 FQI2NA90 FQB2NA90TM O-263 PDF

    Contextual Info: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB2NA90 FQI2NA90 FQI2NA90TU O-262 FQI2NA90 PDF

    FQPF4N90

    Contextual Info: QFET TM FQPF4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQPF4N90 O-220F FQPF4N90 PDF

    SSH7N90A

    Abstract: SSH7N90
    Contextual Info: N-CHANNEL POWER MOSFET SSH7N90A FEATURES BVDSS = 900V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 900V


    Original     		SSH7N90A SSH7N90A SSH7N90 PDF

    Contextual Info: QFET TM FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB4N90 FQI4N90 FQB4N90TM O-263 PDF

    Contextual Info: QFET TM FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQB6N90 FQI6N90 FQB6N90TM O-263 PDF

    FQB4N90

    Abstract: FQI4N90
    Contextual Info: QFET TM FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB4N90 FQI4N90 FQI4N90 PDF

    FQA9N90

    Abstract: FQA9N90 equivalent
    Contextual Info: QFET TM FQA9N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA9N90 FQA9N90 FQA9N90 equivalent PDF

    FQA7N90

    Contextual Info: QFET TM FQA7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA7N90 FQA7N90 PDF

    FQAF7N90

    Abstract: 900V N-Channel QFET
    Contextual Info: QFET TM FQAF7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQAF7N90 FQAF7N90 900V N-Channel QFET PDF

    Contextual Info: QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQP8N90C/FQPF8N90C O-220 FQP8N90C/FQPF8N90C PDF

    FQA7N90M

    Contextual Info: QFET TM FQA7N90M 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQA7N90M FQA7N90M PDF

    FQP4N90

    Abstract: IRF 450 MOSFET
    Contextual Info: QFET TM FQP4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQP4N90 FQP4N90 IRF 450 MOSFET PDF

    FQPF8N90C

    Abstract: mosfet 8A 900V TO-220
    Contextual Info: QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQP8N90C/FQPF8N90C FQP8N90C/FQPF8N90C FQPF8N90C mosfet 8A 900V TO-220 PDF

    Contextual Info: QFET TM FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB4N90 FQI4N90 FQI4N90TU O-262 FQI4N90 PDF

    Contextual Info: QFET TM FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB4N90 FQI4N90 PDF

    Contextual Info: QFET TM FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQB6N90 FQI6N90 FQI6N90TU O-262 FQI6N90 PDF

    61mH

    Abstract: FQB4N90 FQI4N90
    Contextual Info: QFET TM FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB4N90 FQI4N90 61mH FQI4N90 PDF

    FQB6N90

    Abstract: FQI6N90
    Contextual Info: QFET TM FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		FQB6N90 FQI6N90 FQI6N90 PDF

    FQAF5N90

    Contextual Info: FQAF5N90 September 2000 QFET TM FQAF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQAF5N90 FQAF5N90 PDF

    fqpf3n90

    Contextual Info: FQPF3N90 September 2000 QFET TM FQPF3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQPF3N90 fqpf3n90 PDF