900V Search Results

A12 diode

Abstract: MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v
Contextual Info: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This

Contextual Info: STE30NK90Z N-channel 900V - 0.21Ω - 28A ISOTOP Zener-Protected SuperMESH MOSFET General features Type VDSS RDS on ID Pw STE30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ) s ( ct

1N4148 SPACE POWER ELECTRONICS INC

Abstract: PA97DR
Contextual Info: PA97DR PA97DR P r o PA97DR duct Innovation From Power Operational Amplifiers FEATURES DESCRIPTION • HIGH VOLTAGE — 900V ±450V • LOW QUIESCENT CURRENT — 600µA • HIGH OUTPUT CURRENT — 10mA APPLICATIONS • MASS SPECTROMETERS • SCANNING COILS

2sk1464

Contextual Info: 2SK1464 2076 U H U ltra h ig h V o lta g e S eries V Ds s = 900V N Channel Power M O S F E T • f'3467 F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A bso lu te M axim um R a tin g s at Ta = 25°C Drain to Source Voltage

Contextual Info: ^ litr o n PR O DU CT DEVICES.INC. 1 1 7 7 BLUE H ERON BLVD. • RIVIERA BEACH, FLORIDA 33404 T E L : 407 848-4311 • TLX: 51-3435 • F A X : (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 900V, 4.0A, 2.4 Q SYMBOL Dr ai n-source Volt.(l)

APT10035LLL

Abstract: APT46GA90JD40 MIC4452 max4170
Contextual Info: APT46GA90JD40 900V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

2SC3149

Abstract: NPN 800V
Contextual Info: Product Specification www.jmnic.com 2SC3149 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage: VCBO=900V Min ・Fast switching speed. ・Wide ASO (Safe Operating Area) APPLICATIONS ・800V/1.5A switching regulator applications

Contextual Info: 2SK1983-01 N-channel MOS-FET FAP-IIA Series 900V > Features - 4Ω 3A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

id 0835

Abstract: STW8NB90 STH8NB90FI
Contextual Info: STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STW8NB90 900 V < 1.45 Ω 8A STH8NB90FI 900 V < 1.45 Ω 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

AP09N90W

Contextual Info: AP09N90W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ 100% Avalanche test ▼ Fast Switching ▼ Simple Drive Requirement G BVDSS 900V RDS ON 1.2Ω ID 8.6A S Description AP09N90 series are specially designed as main switching devices for

Contextual Info: 2SK2528-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

STW9NB90

Contextual Info: STW9NB90 N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH MOSFET TYPE STW9NB90 • ■ ■ ■ ■ ■ V DSS R DS on ID 900 V <1Ω 9.7 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

1MBH50-090

Abstract: electrical symbols LC resonant circuit schematic symbols lc50a
Contextual Info: 1MBH50-090 50A Fuji Power Module Outline Drawings • Features • High Voltage (900V) • Low Saturation Voltage • Voltage Drive a 2.0 1 ■ A p p lications 5.45 5 .45 • Resonant Mode eS I—'}J i h“ != .1 — 1. cd • Microwave Ovens • Power Supply

pj 87 diode

Abstract: diode pj 87 te2s 2SK2653-01R
Contextual Info: F U JI StHlELTUtìliE N-channel MOS-FET 2SK2653-01R FAP-IISSeries 900V Features 2,5 £2 6A 80 W > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 3 0 V G uarantee Repetitive Avalanche Rated

Contextual Info: DIGITRON SEMICONDUCTORS 1N3670A-1N3673A STANDARD RECOVERY RECTIFIERS ELECTRICAL CHARACTERISTICS Symbol 1N3670 1N3671 1N3672 1N3673 Repetitive peak reverse voltage Characteristics VRRM 700V 800V 900V 1000V Maximum RMS reverse voltage VRMS 490V 560V 630V 700V

P5NB90FP

Abstract: P5NB90 STP5NB90 STP5NB90FP
Contextual Info: STP5NB90 STP5NB90FP N - CHANNEL 900V - 2.3 Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE ST P5NB90 ST P5NB90FP • ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V < 2.5 Ω < 2.5 Ω 5 A 5 A TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY

STB3NC90

Abstract: STB3NC90Z K900
Contextual Info: STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED

STU7NA90

Abstract: sd 50 diode
Contextual Info: STU7NA90 N - CHANNEL 900V - 1.05 Ω - 7A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU7NA90 900 V < 1.3 Ω 7A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.05 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED

APT64GA90B

Abstract: MIC4452 DIODE 76A
Contextual Info: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

FS3KM18A

Abstract: FS3KM-18A FS3KM18 71Q1
Contextual Info: MITSUBISHI Neh POWER MOSFET FS3KM-18A HIGH-SPEED SWITCHING USE FS3KM-18A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 V d s s .900V rDS ON (MAX) .4.0Í2

2SK2668

Abstract: FP3W90HVX2
Contextual Info: SHINDENGEN HVX-2 Series Power MOSFET 2SK2668 N-Channel Enhancement type OUTLINE DIMENSIONS FP3W90HVX2 Case : ITO-3P (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.

Contextual Info: \ _ _ _ _ _ _ _ 1£ S D - 3 9 9 Q 0 - 0 10 1 BEAU 90 fH 900V 10A \\ NOTES; MATERIAL: SEE TABLE FINISHES; SEE TABLE PRODUCT SPECIFICATION; NOT PACKAGING; NET REQUIRED NATES WITH; 90 SERIES PLOGGABLE TERMINAL BLOCK INCH DIMS ARE SHOWN IN PARENTHESIS XXX "XX" REFERS TO THE NOMBER OF CIRCUIT POSITIONS

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N90Z Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90Z is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5N90 Power MOSFET 5A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum