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    900N20N Search Results

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    900N20N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSZ900N20NS3GATMA1

    MOSFET N-CH 200V 15.2A 8TSDSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () BSZ900N20NS3GATMA1 Digi-Reel 38,578 1
    • 1 $2.00
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    BSZ900N20NS3GATMA1 Cut Tape 38,578 1
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    BSZ900N20NS3GATMA1 Tape & Reel 35,000 5,000
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    Avnet Americas () BSZ900N20NS3GATMA1 Ammo Pack 1
    • 1 $2.74
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    BSZ900N20NS3GATMA1 Tape & Reel 16 Weeks 5,000
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    Mouser Electronics () BSZ900N20NS3GATMA1 16,870
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    BSZ900N20NS3GATMA1 16,670
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    Newark BSZ900N20NS3GATMA1 Cut Tape 19 1
    • 1 $2.74
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    Rochester Electronics BSZ900N20NS3GATMA1 56,328 1
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    TME BSZ900N20NS3GATMA1 858 1
    • 1 $1.76
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    Rutronik BSZ900N20NS3GATMA1 Tape & Reel 15,000 5,000
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    EBV Elektronik BSZ900N20NS3GATMA1 53 Weeks 5,000
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    Infineon Technologies AG BSC900N20NS3GATMA1

    MOSFET N-CH 200V 15.2A TDSON-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () BSC900N20NS3GATMA1 Cut Tape 12,783 1
    • 1 $2.29
    • 10 $1.47
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    BSC900N20NS3GATMA1 Digi-Reel 12,783 1
    • 1 $2.29
    • 10 $1.47
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    BSC900N20NS3GATMA1 Tape & Reel 10,000 5,000
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    Avnet Americas BSC900N20NS3GATMA1 Tape & Reel 15 Weeks 5,000
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    Newark BSC900N20NS3GATMA1 Cut Tape 1
    • 1 $2.92
    • 10 $1.90
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    Bristol Electronics () BSC900N20NS3GATMA1 68
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    BSC900N20NS3GATMA1 30
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    Rochester Electronics BSC900N20NS3GATMA1 4,788 1
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    EBV Elektronik BSC900N20NS3GATMA1 16 Weeks 5,000
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    Infineon Technologies AG BSZ900N20NS3 G

    MOSFETs 200V 15.2A PG-TSDSON-8 OptiMOS 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics () BSZ900N20NS3 G 19,485
    • 1 $2.02
    • 10 $1.29
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    BSZ900N20NS3 G 16,837
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    Bristol Electronics BSZ900N20NS3 G 7
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    Infineon Technologies AG BSC900N20NS3 G

    MOSFETs N-Ch 200V 15.2A TDSON-8 OptiMOS 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics () BSC900N20NS3 G 3,629
    • 1 $2.15
    • 10 $1.30
    • 100 $0.90
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    BSC900N20NS3 G 3,529
    • 1 $2.15
    • 10 $1.30
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    Infineon Technologies AG BSZ900N20NS3GATMA1.

    Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:15.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:62.5W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSZ900N20NS3GATMA1.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark BSZ900N20NS3GATMA1. Tape & Reel 5,000
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    Find more 900N20N price and stock on Findchips.com

    900N20N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BSC900N20NS3

    Abstract: 900N20NS IEC61249-2-21 JESD22 900N20N
    Contextual Info: Type 900N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level VDS 200 V RDS on ,max 90 mW ID 15.2 A • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on)


    Original     		BSC900N20NS3 IEC61249-2-21 900N20NS 900N20NS IEC61249-2-21 JESD22 900N20N PDF

    BSZ900N20NS3

    Abstract: BSZ900 900N20N IEC61249-2-21 JESD22
    Contextual Info: Type 900N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level VDS 200 V RDS on ,max 90 mW ID 15.2 A • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on)


    Original     		BSZ900N20NS3 IEC61249-2-21 900N20N BSZ900 900N20N IEC61249-2-21 JESD22 PDF

    Contextual Info: Type 900N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level V DS 200 V R DS on ,max 90 mΩ 15.2 ID A • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on)


    Original     		BSC900N20NS3 IEC61249-2-21 900N20NS PDF

    Contextual Info: Type 900N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level VDS 200 V RDS on ,max 90 mW ID • Excellent gate charge x R DS(on) product (FOM) 15.2 A • Low on-resistance R DS(on)


    Original     		BSZ900N20NS3 IEC61249-2-21 900N20N PDF

    900N20N

    Abstract: D76A
    Contextual Info: Type 900N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level VDS 200 V RDS on ,max 90 mW ID 15.2 A • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on)


    Original     		BSZ900N20NS3 IEC61249-2-21 900N20N 900N20N D76A PDF

    Diode DD100

    Abstract: 900N20N 900N20NS
    Contextual Info: Type 900N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level V DS 200 V R DS on ,max 90 mΩ 15.2 ID A • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on)


    Original     		BSC900N20NS3 IEC61249-2-21 900N20NS Diode DD100 900N20N 900N20NS PDF