900N20N Search Results
900N20N Price and Stock
Infineon Technologies AG BSZ900N20NS3GATMA1MOSFET N-CH 200V 15.2A 8TSDSON |
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BSZ900N20NS3GATMA1 | Digi-Reel | 38,717 | 1 |
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BSZ900N20NS3GATMA1 | Tape & Reel | 5,000 | 16 Weeks | 5,000 |
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BSZ900N20NS3GATMA1 | 18,580 |
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BSZ900N20NS3GATMA1 | Cut Tape | 19 | 1 |
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BSZ900N20NS3GATMA1 | 56,328 | 1 |
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BSZ900N20NS3GATMA1 | 858 | 1 |
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BSZ900N20NS3GATMA1 | Tape & Reel | 20,000 | 5,000 |
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BSZ900N20NS3GATMA1 | Cut Tape | 3,833 | 0 Weeks, 1 Days | 1 |
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BSZ900N20NS3GATMA1 | 53 Weeks | 5,000 |
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BSZ900N20NS3GATMA1 | 15,000 | 5,000 |
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BSZ900N20NS3GATMA1 | 18,930 |
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Infineon Technologies AG BSC900N20NS3GATMA1MOSFET N-CH 200V 15.2A TDSON-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC900N20NS3GATMA1 | Cut Tape | 9,985 | 1 |
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BSC900N20NS3GATMA1 | Tape & Reel | 15 Weeks | 5,000 |
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BSC900N20NS3GATMA1 | Cut Tape | 1 |
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BSC900N20NS3GATMA1 | 68 |
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BSC900N20NS3GATMA1 | 4,788 | 1 |
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BSC900N20NS3GATMA1 | Cut Tape | 7,197 | 0 Weeks, 1 Days | 1 |
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BSC900N20NS3GATMA1 | 16 Weeks | 5,000 |
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BSC900N20NS3GATMA1 | 5,000 | 5,000 |
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BSC900N20NS3GATMA1 | 25,000 |
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Infineon Technologies AG BSC900N20NS3 GMOSFETs N-Ch 200V 15.2A TDSON-8 OptiMOS 3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC900N20NS3 G | 3,674 |
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Infineon Technologies AG BSZ900N20NS3 GMOSFETs 200V 15.2A PG-TSDSON-8 OptiMOS 3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ900N20NS3 G |
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BSZ900N20NS3 G | 7 |
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Infineon Technologies AG BSZ900N20NS3GATMA1.Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:15.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:62.5W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSZ900N20NS3GATMA1. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ900N20NS3GATMA1. | Tape & Reel | 5,000 |
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900N20N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BSC900N20NS3
Abstract: 900N20NS IEC61249-2-21 JESD22 900N20N
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BSC900N20NS3 IEC61249-2-21 900N20NS 900N20NS IEC61249-2-21 JESD22 900N20N | |
BSZ900N20NS3
Abstract: BSZ900 900N20N IEC61249-2-21 JESD22
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BSZ900N20NS3 IEC61249-2-21 900N20N BSZ900 900N20N IEC61249-2-21 JESD22 | |
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Contextual Info: Type 900N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level V DS 200 V R DS on ,max 90 mΩ 15.2 ID A • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) |
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BSC900N20NS3 IEC61249-2-21 900N20NS | |
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Contextual Info: Type 900N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level VDS 200 V RDS on ,max 90 mW ID • Excellent gate charge x R DS(on) product (FOM) 15.2 A • Low on-resistance R DS(on) |
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BSZ900N20NS3 IEC61249-2-21 900N20N | |
900N20N
Abstract: D76A
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BSZ900N20NS3 IEC61249-2-21 900N20N 900N20N D76A | |
Diode DD100
Abstract: 900N20N 900N20NS
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BSC900N20NS3 IEC61249-2-21 900N20NS Diode DD100 900N20N 900N20NS |