900 V 6 AMP MOSFET Search Results

IRFZ44 equivalent

Abstract: IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034
Contextual Info: I I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS BVdss Drain Sourct Vofcag* Vote PMt Numbtr Rd s m Ondate IMltMCI (Ohm) H E X -P a k M o d u l« P a ra lle l Chip N-Cham xel 60 IRFK4H054 100 IRFK4H150 200 IRFK4H250 400 IRFK4H350 500 IRFK4H450

TL 650 ht

Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100
Contextual Info: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

transistor 20107

Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier
Contextual Info: TARGET SYSTEMS PRODUCTS Function Type Description Cellular N AMPS /{E> TACS IS-54/-136 TDMA IS—95 CDMA Cordless GSM DCS1800 PCS PDC RF Amplifiers { SA5200 CTO CT1 SS X X Wireless Data DECT PHS 802.11 CDPD X X Gain block-1 GHZ PAGERS RF Front End SA611 1 GHz low voli LNA and mixer

MTP6N55

Abstract: MTP2P45 IRF840 SELECTION GUIDE MTP1N55 MTP2N90 MTP4N90 MTP8N45 irf8408 MTP3N80 irf840
Contextual Info: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5

2SK1171

Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Contextual Info: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn

dd128v

Abstract: RA45H8994M1-101
Contextual Info: < Silicon RF Power Modules > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the

Contextual Info: < Silicon RF Power Modules > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the

MTP3N80

Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
Contextual Info: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5

Contextual Info: Panel Mount DataSheet 1-DCL Series • Ratings from 7A to 40A @ 200 VDC and from 7A to 10A @ 500VDC • Mosfet Output • UL Approved, CE Compliant to EN60950-1 • Improved SEMS screw and washer • Redesigned housing with anti-rotation barriers • DC control

Contextual Info: Panel Mount DataSheet 1-DC Series • Ratings from 7A to 40A @ 200 VDC and from 7A to 10A @ 500VDC • Mosfet Output • UL Approved, CE Compliant to EN60950-1 • Improved SEMS screw and washer • Redesigned housing with anti-rotation barriers • DC control

BD9870FPS

Abstract: C6-K3L
Contextual Info: TECHNICAL NOTE High Performance Switching Regulator Series 900kHz Step-down Switching Regulator with Integrated Compensation BD9870FPS ● Description The BD9870FPS single-channel step-down switching regulator incorporates a Pch MOSFET capable of PWM operation at 900kHz,

Contextual Info: Monolithic 1 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 1A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V

Contextual Info: Monolithic 2 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 2A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V

Contextual Info: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-Down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V

Contextual Info: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-Down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V

BAT54S

Abstract: EL7464CRE-T13 EL7564C EL7564CM EL7564CM-T13 EL7564CRE EL7564CRE-T7 SO20 C6500 AN 7323 IC
Contextual Info: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V

Contextual Info: EL7563C EL7563C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • Internal patented current sense • Cycle-by-cycle current limit

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

Contextual Info: EL7563C EL7563C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • Internal patented current sense • Cycle-by-cycle current limit

BAT54S

Abstract: EL7563C EL7563CM EL7563CM-T13 EL7563CRE EL7563CRE-T13 EL7563CRE-T7 SO20
Contextual Info: EL7563C EL7563C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • Internal patented current sense • Cycle-by-cycle current limit

GT30F121

Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Contextual Info: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications

Contextual Info: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V

200W MOSFET POWER AMP

Abstract: HA11511CNT 2sk mosfet 2sc2610 2SK1327 2SK1225 2SK296 2sk1342 2SK1635 2SK1151
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow