900 MHZ GERMANIUM DIODE Search Results

germanium power devices corporation

Abstract: GM8HS InGaas PIN photodiode, 1550 NEP Germanium power diode germanium catalog GM7VHR gep800 ingaas apd photodetector GM2HS GM10HS
Contextual Info: Small & Large Area pn, pin Two-Color Detector OPTOELECTRONIC PRODUCTS Ge Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available Germanium Power Devices Corporation GPDOS00004 G Introduction/Glossary of Terms

GM10HS

Abstract: GM10HSCS GM6VHR GM7HS GM8HS GEP600 GEP800 GPD GM10BNC GEP700 GM2HS
Contextual Info: Small & Large Area pn, pin detectors Two-color detectors GPD OPTOELECTRONICS CORP. Germanium Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available • Filtered Windows for High Power Available • Standard and Custom Packages/Submounts

Contextual Info: GAP 500 GAP1000 GAP2000 GAP3000 □ Electrical Characteristics @ 25 °C GAP500 Active Diameter GAP 1000 GAP2000 GAP3000 mm 0.5 1.0 2.0 3.0 Responsivity @ 850nm 0.10 0.20 0.10 (0.20) 0.10 (0.20) 0.10 (0.20) AAV min. (typ.) 1300nm 0.80 (0.90) 0.80 (0.90) 0.80 (0.90)

Contextual Info: Small & Large Area pn, pin Two-Color Detector OPTOELECTRONIC PRODUCTS Ge Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available GPD Optoelectronics Corp. GPDO S00007 Introduction/Glossary of Jerms G Introduction

pm4020

Abstract: AF279 p21b AF279S AF240 900 mhz germanium diode Germanium Q60106-X240 S400 d 1556 transistor
Contextual Info: f 25C D • flS3SbOS 00DMQ7b 1 H S I E 6 PIMP Germanium RF Transistor - SIEMENS AKTIENGESELLSCHAF A F240 for m ixer and oscillator stages up to 9 0 0 M H z AF 2 4 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS

BGA628L7

Contextual Info: BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.

BGA628L7

Abstract: XPOSYS 628L C166 JESD22-A114 NF50
Contextual Info: BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved.

CX111

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA V oltage Controlled M ultivibrator M C I 658 T h e M C 1658 is a vo lta g e -co n tro lle d m ultivib rato r w hich provides appropriate level shifting to prod u ce an o utp ut co m pa tib le w ith M E C L III and M EC L 10,000 logic levels. F requency control is accom plished

Contextual Info: Ge PHOTODETECTOR Specifications at Room Temperature TYPE ACTIVE DIA. mm GM2 GM2HS 0.5sq GM2VHS GM2VHR SHUNT RESISTANCE @ V r = 10 mv KG MIN TYP. 30 100 250 550 60 150 350 900 REVERSE VOLTAGE V . FOR TEST VOLTS 2.0 1.0 0.7 0.5 10 3 0.5 0.5 15 27 5 1 55 200

tba 450

Abstract: dc46a GUNN DIODE plessey
Contextual Info: GEC PLESSEY SENICONDS PACKAGED DETECTOR MODULES 43E D • 3?t.asaa oaisabi m ■ plsb 'X -o'i-o 'j DB3031 Germanium Backward Diode Detector Modules • • • • • • 0-1-18 GHz frequency range High sensitivity at zero bias High dynamic range > 4 5 d B

MC1658

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC1658 Voltage Controlled Multivibrator The MC1658 is a voltage–controlled multivibrator which provides appropriate level shifting to produce an output compatible with MECL III and MECL 10,000 logic levels. Frequency control is accomplished

MC1658

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Voltage Controlled Multivibrator MC1658 The MC1658 is a voltage–controlled multivibrator which provides appropriate level shifting to produce an output compatible with MECL III and MECL 10,000 logic levels. Frequency control is accomplished

Contextual Info: BFP720F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-25 RF & Protection Devices Edition 2012-10-25 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

mc1658

Contextual Info: MOTOROLA MC1658 Voltage Controlled Multivibrator VOLTAGE CONTROLLED MULTIVIBRATOR Pinout: 16–Lead Package Top View NC NC CX2 INF BIAS CX1 NC NC 16 15 14 13 12 11 10 9 L SUFFIX 16–LEAD CERAMIC PACKAGE CASE 620–10 Not Recommended for New Designs 1 2

Contextual Info: BFP740FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-11 RF & Protection Devices Edition 2012-10-11 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP720FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-16 RF & Protection Devices Edition 2012-10-16 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP650 High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

MARKING CODE T7s

Abstract: MARKINGCODET7s
Contextual Info: BFP740ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-08 RF & Protection Devices Edition 2012-10-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

Contextual Info: BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

keramische Werke Hermsdorf

Abstract: Mischstufen VEB Keramische Werke OA741 OA645 OA625 hermsdorf OA665 neue halbleiterbauelemente Amateur
Contextual Info: HalbleiterBauelemente Dioden Germanium dioden Type Durchlaß­ spannung U a k IVI Durchlaß­ strom Sperr­ spannung lA K l m A l U k a |V| Sperrstrom IKA li'AI max. zuläss. Sperr­ spannung jEä max. zuass. Durchlaß­ strom UKAma* IVI ^AKmax !mAl Bau­

SP1658

Abstract: SP1658BC plessey SP1658 plessey plessey capacitor SP-1658
Contextual Info: 1SE D PLESSEY SEMICONDUCTORS • 7E E0 51 3 0G1037Ö 0 éÊkSem PLESSEY iconductors, SP1658BC VOLTAGE-CONTROLLED MULTIVIBRATOR CONFORMS TO MIL-STD-883C CLASS B The SP1658 is a voltage-controlled multivibrator which provides appropriate level shifting to produce an output