90 M 20 A Search Results

Contextual Info: 140 120 m A 100 80 8 60 40 20 10 20 30 40 50 60 FREQ. (M H z) 70 80 90

Contextual Info: M&K W aan A M P c< o m p a n y E-Series 2-Way 90° Power Divider 20 - 23 MHz EQSM-2-21.4 SM-1 Features • 2 Way • 90° • Surface Mount Specifications @ 25°C Frequency Range 20 - 23 MHz insertion Loss 20 - 23 MHz Typical 0.4 dB Maximum 0.7 dB Isolation

BLC18

Abstract: 696XG-1059 D818HN-1107 BLC13H 696XG-1052 679YN-1033 BLC10 696XG BLC-16 BLC 187
Contextual Info: 111 TYPE rs 187 BLC S eries TYPE BLC Series Type BLC10 BLC13 BLC13H BLC16 BLC18 BLC216 5-12 5-12 5-14 5-12 3 -9 Output Open-Circuft Voltage M Vms 5-12 2500V (0-P) max. 800 max. 1200 max. 1100 max. 1800 max. 1500 max. Frequency (KHz) fH 20-90 20-90 20-90

Contextual Info: • Housing LEDs Part Number Shape 5mm R ight A ngle Emitting Material Emitting Color Red GaAsP/GaP Green GaP Red GaAsP/GaP Yellow GaAsP/GaP VM1LUGR59M-1 l VM1LUYR59M-1 m m m 21 625 *20 - 90 60° 590 565 *20 • 70 590 *20 - 60 Green GaP GaAsP/GaP NM1 LUR53D5.08

PAL10L8

Contextual Info: - 180 - P AL10L8 Series 20 m s tpd Ice II Io A * & t} input X V cc=M A X H -* L — H— L «- Vcc i Pin 20 GND : Pin 10 max ST D max max max max max min 35 25 90 90 25 25 0.25 0.25 3.2 3.2 8 A tt FC A2 A4 B B2 % 0 aL T :£ * MOT NS mA mA mA £ PAL «>

PAL12H6

Contextual Info: - 176 PAL12H6 Series 20 « g tpd A * -ft ¡u input X Vcc = MAX Icc Io L «- B A A2 35 25 35 ns max 90 90 45 mA A4 B2 max 25 25 25 M 0.25 0.25 0.25 mA H -► max 3 .2 3.2 3 .2 mA L «- min 8 8 mA - fi STD A A2 A4 £ FC V cc ' P in 20 GND : P in 10 C m tL

Contextual Info: 90 9724 7 .TOSHIBA, TOSHIBA-. 02E ELECTRONIC ELECTRONIC G2 D E | TCH TH 16364 D.: . x*:*.-: 47 ODli'bBraM 0 -ï:- ROM Read Only Memory »NMOS EPROM Capacity 64K Bit Typo No. . . Component TM M 2764AD-15 TM M 2764AD-20 TM M2764ADI-15 TMM2764ADI-20 Max. Access Max.* Cycle

pj 87

Abstract: TL0232 TL0231 HLMP-S300 PY4553K SLB-15DU SLB-22DU TL022 1723Y TL0208
Contextual Info: 38t* fe !fí Z fi TLÛ2Ü5 ft 2 'T a = 25‘C 1 Æïfc't: '.degl ir 'n n r ! y '.mcd' m A ; r jr p .s t? m i ii ¡y im A i ;m A ' ¡Vi '•C' •£ £ 610 15 2.1 20 25 -2 0 -7 5 90 m t 610 15 2 .1 20 25 -2 0 -7 5 91 2x5 TL0211 m 610 20 2.1 20 25 -2 0 -7 5

PAL12L6

Contextual Info: PAL12L6 181 - - Series 20 m ax JK @ tpd X t! X V cc = M AX Icc: H — Ii Io L «- A A2 35 25 35 ns m ax 90 90 45 mA A4 B B2 C m ax 25 25 25 m ax 0 .2 5 0 .2 5 0 .2 5 H -» m ax 3 .2 3 .2 3 .2 mA L «- m in 8 8 mA M mA - tt £ STD A * * * * * A2 A4 FC V cc

Contextual Info: NARROWBAND 90° HYBRIDS SURFACE-MOUNT 10% BANDWIDTH FREQUENCY RANGE Fe INSERTION LOSS dB a m p l it u d e Fc UNBALANCE Full Band (dB) PHASE UNBALANCE Full Band (Degrees) ISOLATION (dB) Full Band VSWR TYP OUTLINE DRAWING 25/20 25/20 25/20 25/20 1.1:1 1.1:1

2N5969

Abstract: 2n6182 2N6031 i8080 2N6030 2N5876 2N5879 2N5880 2N5883 2N5954
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST m hF:E SAT . VOLTA GES M 'c (A 4 M in . M ax. 6 VCE (V) 4 20 60 6 4 6 80 80 6 4 TO-3 60 60 5 2N 5884 TO-3 80 80 2N 5954 TO -66 90 2N 5955 TO -66 2N 5956 X m PNP DEVICE BR EAKDOY V OLTAGE S (V) 0.5 1 2 20

Contextual Info: Analog Power AM1523CE N & P-Channel 20-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 90 @ VGS = 4.5V 20 120 @ VGS = 2.5V 200 @ VGS = -4.5V -20 370 @ VGS = -2.5V

0P-90G

Abstract: OP-90 OP90E
Contextual Info: - 68 - O P -90 iS ififJK , n —; W -, ANALOG D EVICES •m 6~36V, + 0 . 8 ~ ± 1 8 V % m & QP-90G tt V s= ± 15V #GND • 6 A i * 7 A X M S QF-90E ± 18 ±18 V 20 - V s - 2 0 - —+ V s+ 20 - V s - 2 0 '" - + V s +20 V - V s - 2 0 — + V s+ 20 - V s-20~ + V s+ 20

Contextual Info: Dual Channel, Gain Ranging ADC with RSSI 12/97 Features 20 M SPS Sam ple Rate >100 dB dynam ic range 90 dB from ADC + RSSI 15 dB from O versam pling @ 6.5 M SPS & 200 kHz BW IF Sam pling to 250 M Hz Ain

PAL16L2

Contextual Info: PAL16L2 — 183 — {Series 20 m @ tpd A ft t! fcU X input Vcc=M AX Icc H— II L «lo - max STD A A2 max 35 25 35 ns max 90 90 45 fflA A4 B B2 max 25 25 25 M max 0.25 0.25 0.25 mA H -* max 3.2 3.2 3.2 mA L — min 8 8 mA - tt « K ^ STD A A2 A4 B B2 C FC

170m0

Abstract: K1090
Contextual Info: www.fastrongroup.com SSSC 1210AS: Typical lZl vs Frequency ƒ 100 IZI 100 (K ) 10 90 8 µH Ø 7.5 max Q Factor 1.5 max 10 nH 4 µH 80 99.5 24.0 max 18.3 1.5 Ød 17 µH 100 nH 170 60 0,150 4 6 8 17 1 1 1 0.1 20 20 20 20 DCR max (mΩ) Rated DC Current (A)

PL 15 Z

Abstract: z 5v1 9v1z PL33Z 180Z 5V6Z 100Z PL3V6Z PL18Z PL13Z
Contextual Info: zener diodes diodes zener THOMSON-CSF Types VZT#/'Z T rZ r/l2 T *ZT OCVZ •r / V r Vr ■ZM V (m A| 2 3,5 3,5 5 5 7 7 10 10 10 10 12 12 14 14 17 17 20 20 24 24 28 28 34 34 41 41 50 50 60 60 75 75 90 90 320 290 280 250 215 200 190 170 155 140 130 120 105

2N1724

Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
Contextual Info: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15

Contextual Info: E-Series 2-Way 90° Power Splitter 40 - 70 MHz ESQ-2-70 R-2 Features • 2-Way • 90 Degree Specifications @ 25 C 4 0 -7 0 MHz Frequency Range Insertion Loss 0.3 dB Typ 0.7 dB Max Isolation 30dB Typ 20 dB Min 1.5 dB Max A m plitude Unbalance Phase Unbalance

NKT 90

Abstract: AD149 OC 140 germanium transistor germanium af transistors ad 149 AD140 OC29 NKT452 OC36 NKT404
Contextual Info: Germanium Power Transistors PNP Germanium A F A llo y Power Transistors in T 0 3 metal case T ype M a xim u m ratings Characteristics @ T a m |.,= 2 5 ° C PT O T{ W I- 0 ^F E A A D 14 0 A D 149 4CI 30 55 50 10 20 3.0 3.5 43 37.5 90 100 30 20 . 10 0 1.0/1.01

Contextual Info: FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSFET Features Applications • 3.2 A, 20 V. ■ Battery management RDS ON = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Low gate charge ■ High performance trench technology for extremely low

Si 2814

Contextual Info: M AZDA BELM U QÂTHÛSGÛPE M0H0CHR0ME 2 8 -1 4 W 90“ - E cra n te in té .A u to p ro té g é 50 % 28 cm 20 mm 90» C o e ffic ie n t d e tra n s m is s io n de la d a l l e - é c r a n . D ia g o n a le .

Contextual Info: / internatio nal S e m ic o n d u c to r , SR102 thru SR109 Inc. SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 TO 90 Volts CURRENT - 1.0 Ampere FEATURES MECHANICAL DATA • P lastic Package carries U nderwriters Laboratory Flam m ability C lassification 9 4 V -0

FDJ1028N

Abstract: SC75
Contextual Info: FDJ1028N N-Channel 2.5 Vgs Specified PowerTrench MOSFET Features Applications • 3.2 A, 20 V. RDS ON = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V ■ Battery management General Description ■ Low gate charge ■ High performance trench technology for extremely low