9-CHANNEL POWER DRIVER Search Results

dot matrix printer circuit diagram datasheet

Abstract: HA13408 dot matrix printer Hitachi DSA00231 HA-13408 hitachi feeder
Contextual Info: HA13408 9-Channel Power Driver ADE-207-206 Z 1st Edition July 1996 Description The HA13408 9-channel power driver IC is designed to drive dot matrix printer head. This IC can drive 9 pins without using any external components. HA13408 can be used for 2 system four-phase step drive, as

DS36BC959

Abstract: S8090 X3-129-1986 480b7
Contextual Info: ADVANCE INFORMATION Semiconductor October 1994 DS36BC959 Low Power BiCMOS 9-Channel Multipoint Transceiver General Description Features The DS36BC959 is a 9-bit, low power transceiver optimized for applications using the differential SCSI Interface. Each channel has its own driver and receiver enable control pin.

block diagram of dot matrix printer

Abstract: ha13408 SP-23TA VI-08 HA-13408
Contextual Info: HA13408 9-Channel Power Driver Description HA 13408 The H A 13408 9-channel pow er driver IC is designed lo drive dot matrix printer head. This IC can drive 9 pins w ithout using any external components. HA 13408 can be used for 2 system four-phase step drive, as every channel is used

block diagram of dot matrix printer

Abstract: DOT MATRIX PRINTER HA-13408 dot matrix printer circuit diagram HA13408 printer head Hitachi Scans-001 dot matrix printer head VI-08
Contextual Info: HA13408 9-Channel Power Driver Description HA13408 The H A 13408 9-channel pow er driver IC is designed to drive dot matrix printer head. This IC can drive 9 pins w ithout using any external components. HA 13408 can be used for 2 system four-phase step drive, as every channel is used

FD3055

Abstract: Fp3055
Contextual Info: interrii RFD3055, RFD3055SM, RFP3055 D a ta S h e e t 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power J u ly 1 9 9 9 F ile N u m b e r 3648.2 Features •

Contextual Info: in te rrii RFG60P03, RFP60P03, RF1S60P03SM D a la S h e e t J u ly 1 9 9 9 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 5 1 .3 Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

8A60V

Abstract: rfp8p06e
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E integri I D a ta S h e e t J u ly 1 9 9 9 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 3 7 .5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

2SK1059

Abstract: 2SK1059-Z 2SK1059Z 2SK105 ScansUX881
Contextual Info: '* f * .i f N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2 S K 1 0 5 9 , 2 S K 1 0 5 9 -Z DESCRIPTION The 2SK1059, 2SK1059-Z are N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATURES • 4 V Gate Drive — Logic level —

TA09532

Contextual Info: interrii " RFP2N20L I D atei S h e e t J u ly 1 9 9 9 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use

Contextual Info: mtefsil RFG30P05, RFP30P05, RF1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives

ET840

Contextual Info: ET840 9 Amps， ，500Volts N-Channel MOSFET • Description The ET840 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

88W51

Abstract: ET630
Contextual Info: ET630 9 Amps， 200Volts N-CHANNEL MOSFET • DESCRIPTION The ET630 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

RFPS0N06

Abstract: TA49018 RFP50N06
Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM in te ik il D a ta S h e e t J u ly 1 9 9 9 50A, BOV, 0.022 Ohm, N-Channel Power MOSFETs F ile N u m b e r 3 5 7 5 .4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

UTC UF630L

Abstract: UF630L-TN3-R uf630 power mosfet TO-252 MOSFET p channel UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: MAX5112 9-Channel, 14-Bit, Current DAC with I2C Interface General Description Features The MAX5112 is a 14-bit, 9-channel, current-output digital-to-analog converter DAC . The device operates from a low +3.0V power supply and provides 14-bit performance without any adjustment.

Contextual Info: SO T8 9 BSS87 200 V, N-channel vertical D-MOS transistor 9 December 2014 Product data sheet 1. General description N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device

Contextual Info: 4AM15 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N Channel: RDSu,n < 0 .5 £1, V os = 10 V, ID = 2 A P Channel: RDS on) < 0 .9 Vas = - 1 0 V, ID = - 2 A • Low drive current

TB62781

Abstract: tb6278
Contextual Info: TB62781FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB62781FNG 9-Channel Constant-Current LED Driver of the 3.3V and 5V Power Supply Voltage Operation 1. Features • Power supply voltages: VCC = 3.3 V/5 V • Output drive capability and output count: 80 mA max x 9 channels

TB62781

Contextual Info: TB62781FNG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB62781FNG 9-Channel Constant-Current LED Driver of the 3.3V and 5V Power Supply Voltage Operation 1. Features • Power supply voltages: VCC = 3.3 V/5 V • Output drive capability and output count: 80 mA max x 9 channels

TQFP-64-EP

Contextual Info: iW7032 32-Channel LED Driver for LCD Panel Backlighting 2.0 Description 1.0 Features ● Fully integrated power FET with minimum external components ● Proprietary digital power management and patented adaptive switch mode LED driver ● 32-channel output each at 56 V with 9 V to 28 V input

Contextual Info: iW7022 16-Channel LED Driver for LCD Panel Backlighting 1.0 Features 2.0 Description ● Fully integrated power FET with minimum external components ● Proprietary digital power management and patented adaptive switch mode LED driver ● 16-channel output each at 60 V with 9 V to 28 V input

CHM1503YJGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel Q1: VOLTAGE 30 Volts N-channel Q2: VOLTAGE 30 Volts CHM1503YJGP CURRENT 8 Ampere CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers.

Contextual Info: DS92LV090A DS92LV090A 9 Channel Bus LVDS Transceiver Literature Number: SNLS025C DS92LV090A 9 Channel Bus LVDS Transceiver General Description Features The DS92LV090A is one in a series of Bus LVDS transceivers designed specifically for the high speed, low power proprietary backplane or cable interfaces. The device operates from

2SK699

Contextual Info: »E|t,4E?SaS E C ELECTRONICS INC GGlflflTa 2 | 7 ^ 3 ?.- o r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK699 D E S C R IP T IO N The 2 S K 6 9 9 is N-Channel M O S Field Effect Power Tran­ P A C K A G E D IM E N S IO N S sistor designed for solenoid, m otor and lamp driver.