9 130 451 044 Search Results

nasa ssq 21635

Abstract: 8LTS 38999 series I NATC SSQ ssq21635 8975-2123 3401-052 SOURIAU 3401 058 souriau crimp tool circular connector
Contextual Info: 38999 Space grade ESA/SCC 3401 Section II MIL-DTL 38999 Space Grade Circular Connectors 59 38999 Space Grade ESA/SCC 3401 Contents • 38999 Space Grade ESA/SCC 3401 SCC Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61

ge 130l10

Abstract: GE capacitors 150l20 GE 47Z7 15a h3 fuse sf thermistor 420l40 GE 150L10 GE 100z15 GE 130L20B DIN 13715 2011 576-V100ZA15P
Contextual Info: CIRCUIT PROTECTION Varistors AVX. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 546, 547 Epcos. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .548, 549

IR 006

Abstract: IRF7521D1
Contextual Info: P D -9.1646 International lö R Rectifier • • • • • PRELIMINARY FETKY IRF7521D1 MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low Vp Schottky Rectifier Generation V T echnology Micro8 Footprint

SSH12N80

Contextual Info: N-CHANNEL POWER MOSFETS SSH12N80/70 FEATURES • Lower Rd sion • Improved inductive ruggedness • Fast sw itching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

BO 937

Contextual Info: SEDI 758 SEDI 758 LOW-POWER 160-BIT LCD SEGMENT DRIVER • DESCRIPTION The SED1758 is a 160-bit dot matrix LCD segment column driver for driving high-resolution color STN LCD panelsat duty cycieshigherthan 1/100(up to 1/500). The LSI featuresawide range of the LCD drive voltages.

03E1

Abstract: 00CF ISD33000 b0334 04D5
Contextual Info:

 
      
 
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TRANSISTOR C 5387

Contextual Info: WJ-LA45-1 / SMLA45-1 1000 to 4000 MHz TO-8 CASCADABLE LIMITING AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ SYMMETRICAL CLIPPING: GOOD EVEN ORDER SUPPRESSION Outline Drawings LA45-1 . o«„ ♦ HIGH OUTPUT LEVEL: +17 dBm TYP. ♦ MEDIUM GAIN: 14.0 dB (TYP.)

108 046f

Abstract: 03e1 046F 044f 03C24 b 0334 046b
Contextual Info:
     

      
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d1758

Contextual Info: SEDI 758 LOW-POWER 160-BIT LCD SEGMENT DRIVER • DESCRIPTION The SED1758 is a 160-bit dot matrix LCD segment column driver for driving high-resolution color STN LCD panels at duty cycles higher than 1/100 (up to 1/500). The LSI features a wide range of the LCD drive voltages.

Diode SMD ED 9a

Abstract: IRF7504 diode AR s1 52 smd rectifier diode code S1 16 soic smd pcb footprint
Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD - 9.1267D IRF7504 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching

Contextual Info: P D - 9.1270F International l R Rectifier IRF7509 PRELIMINARY HEXFET3 Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel

Contextual Info: PD - 9.1262D International IG R Rectifier IRF7603 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V dss = 30V

pronic t85 br

Abstract: pronic t85 eaton T85 rotary Switch pronic r13 t85 55 pronic r13 SS510 MST205N MST105D pronic 2GK54-73
Contextual Info: Product Numerical Index NTE Page Type No. No. Description NTE Page Type No. No. Description NTE Page Type No. No. Description 54−001 54−002 54−003 54−004 54−005 1 1 5 5 2 Toggle, SPST, 15A, 125VAC Toggle, SPDT, 15A, 125VAC Toggle, DPDT, 15A, 125VAC

MA4T64500

Abstract: 4558 MA4T64535 557 sot143 micro X
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV

DESC 87106

Contextual Info: Metuchen C “We Offer Quick Solutions to Noise Pollution” 1-800-679-0516 1-800-679-9959 www.metcaps.c Sw itchm ode Pow er Supply C a p a cito rs S M P S D S C C Dwg. 87106 E — Code Dim A M axi/ Dim B Max 3/ 1 2 3 4 5 6 .650 .650 .650 .650 .650 .650

IRF7504

Contextual Info: PD - 9.1267G International IO R Rectifier IRF7504 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching

smd diode S6 66a

Abstract: REGULATOR SMD MARKING CODE ASC
Contextual Info: PD - 9.1269E International I R Rectifier IRF7507 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

Contextual Info: P D - 9 .1 2 6 5 G International IO R Rectifier IRF7501 HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel M O S F E T Very Small S O IC Package Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

Contextual Info: PD - 9.1269G In tern a tio n al IRF7507 IGR Rectifier HEXFET Power M OSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available In Tape & Reel Fast Switching

M7461

Contextual Info: PD-9.1267F International IO R Rectifier IRF7504 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual P-Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

MA4T64500

Contextual Info: M an A M P com pany Silicon Bipolar High fT Low Noise Microwave Transistors MA4T645 V3.00 Case Styles Features • • • • • • fT to 9 GHz Low Noise Figure High A ssociated Gain Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels

diodo 007

Contextual Info: PD - 9.1267G International IGR Rectifier IRF7504 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching V dss =

Contextual Info: PD - 9.1262D International IÜR Rectifier IRF7603 HEXFET^ Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel M O SFET • Very Small SO IC Package • Low Profile < 1.1 mm • Available in Tape & Reel • Fast Switching V d ss = 30 V

str 1096

Abstract: K 2333 KTY84 3M 230 KTY84-1 KTY84-1 Series KTY84-130 MLA427 SP 1191 G1.L
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D051 KTY84-1 series Silicon temperature sensors Product specification Supersedes data of 1996 Dec 06 File under Discrete Semiconductors, SC17 1998 Apr 09 Philips Semiconductors Product specification Silicon temperature sensors